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Patent US5138407A successfully refreshed from Google Patents.
US5138407A
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US
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Transistor made of 3-5 group semiconductor materials on a silicon substrate
Assignee: Thales SA
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Filing: 1990-12-05
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Granted: 1992-08-11
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Expires: 2010-12-05
Abstract
Abstract The present invention concerns a transistor of semiconductor materials of the 3-5 group on silicon of the type comprising a silicon substrate, at least one layer of semi-insulating 3-5 material and several doped layers of 3-5 group semiconductor material in which is defined at least one conducting channel equipped with a gate metallization, each channel being situated between two access regions alternately known as source and drain, each source and drain regions with a metallization, one of the two access regions to a channel being electrically and thermally connected to the silicon substrate. In accordance with the invention, the transistor comprises between the silicon substrate and the semi-insulating layer of 3-5 group semiconductor material, at least one buffer layer of intrinsic silicon.
Inventors
- 👤 Jean-Pierre Hirtz
- 👤 Marie-Noelle Charasse
- 👤 Thierry Pacou
- 👤 Alain Bosella
- 👤 Pierre Briere
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:44
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/82; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/60; H10D64/62; H10W; H10W15/00; H10W15/01; H10W40/00; H10W40/10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
95 words
A transistor comprising a silicon substrate, at least one layer of semi-insulating 3-5 group material and several doped layers of 3-5 group semiconductor material through which is defined at least one conducting channel equipped with a gate metallization, each channel being situated between two access regions known alternately as source and drain, each with a metallization, one of the two regions of access to a channel being electrically and thermally connected to the silicon substrate, between the silicon substrate and the semi-insulating layer of 3-5 group material, at least one buffer layer of intrinsic silicon.
Claim 2
Dependent Claim
95 words
A transistor comprising a silicon substrate, at least one layer of semi-insulating 3-5 group material and several doped layers of 3-5 group semiconductor material through which is defined at least one conducting channel equipped with a gate metallization, each channel being situated between two access regions known alternately as source and drain, each with a metallization, one of the two regions of access to a channel being electrically and thermally connected to the silicon substrate, between the silicon substrate and the semi-insulating layer of 3-5 group material, at least one buffer layer of intrinsic silicon.
Claim 3
Dependent Claim
18 words
The transistor according to claim 1, wherein the buffer layer of silicon is at least 10 μm thick.
Claim 4
Dependent Claim
19 words
The transistor according to claim 2, wherein the layer of semi-insulating 3-5 group material is about 4 μm thick.
Claim 5
Dependent Claim
21 words
The transistor according to claim 1, wherein the substrate is selected from the group consisting of N+ and P+ doped silicon.
Claim 6
Dependent Claim
54 words
The transistor according to claim 1, wherein the connection between one of the access regions and the silicon substrate is formed by a metal core which crosses the layers of 3-5 group semiconductor material and intrinsic silicon and makes an ohmic contact on the substrate at the interface with the layer of intrinsic silicon.
Claim 7
Dependent Claim
38 words
The transistor according to claim 1, wherein the 3-5 group semiconductor materials are selected from the group consisting of binary compositions of Ga, As, Al, In and P, and ternary compositions of Ga, As, Al, In and P.
Claim 8
Dependent Claim
96 words
A transistor having 3-5 group semiconductor material on silicon comprising a silicon substrate, at least one layer of semi-insulating 3-5 group material and several doped layers of 3-5 group semiconductor material with at least one conducting channel having a gate metallization, each channel being situated between source and drain regions, each source and drain region, with a metallization, one of said source and drain regions being electrically and thermally connected to the silicon substrate and having between the silicon substrate and the semi-insulating layer of 3-5 group material, at least one buffer layer of intrinsic silicon.
Claim 9
Dependent Claim
96 words
A transistor having 3-5 group semiconductor material on silicon comprising a silicon substrate, at least one layer of semi-insulating 3-5 group material and several doped layers of 3-5 group semiconductor material with at least one conducting channel having a gate metallization, each channel being situated between source and drain regions, each source and drain region, with a metallization, one of said source and drain regions being electrically and thermally connected to the silicon substrate and having between the silicon substrate and the semi-insulating layer of 3-5 group material, at least one buffer layer of intrinsic silicon.
References Cited (Backward Citations)
FR2026315A1
Cited
FR2207401A1
Cited
FR2464562A1
Cited
JPS62189761A
Cited
US4774205A
Cited
US4896194A
Cited
US4845044A
Cited
US4914053A
Cited
US4826784A
Cited
US4952527A
Cited
US5016065A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-08-11 | 1996-02-10 | 1996-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-08-11 | 2000-02-10 | 2000-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-08-11 | 2004-02-10 | 2004-08-11 | $7700.00 | Window Closed / Lapsed |