US4914053A
Expired / Lapsed
US
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Heteroepitaxial selective-area growth through insulator windows
Assignee: Texas Instruments Inc
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Filing: 1987-09-08
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Granted: 1990-04-03
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Expires: 2007-09-08
Abstract
Abstract Preferred embodiments include growth of GaAs on insulator-masked silicon; the GaAs is single crystal over the silicon but polycrystalline over the insulator. A post=growth anneal extends the single crystal region over the insulator for distances of 2-4 μm.
Inventors
- 👤 Richard J. Matyi
- 👤 Hisashi Shichijo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 03:39
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/24; H10P14/27; H10P14/271; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/048; Y10S148/072; Y10S148/154; Y10S438/00; Y10S438/933
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
83 words
A method of heteroepitaxy, comprising the steps of: (a) providing a substrate with a surface layer of a first semiconductor material; (b) providing an insulating mask on said surface layer; (c) growing a second layer of a second semiconductor material on said mask and unmasked portions of said surface layer, said growth characterized by single crystal regions on unmasked portions and polycrystalline or amorphous regions on said mask; (d) annealing, said anneal characterized by said single crystal regions extending laterally over said mask.
Claim 2
Independent Claim
83 words
A method of heteroepitaxy, comprising the steps of: (a) providing a substrate with a surface layer of a first semiconductor material; (b) providing an insulating mask on said surface layer; (c) growing a second layer of a second semiconductor material on said mask and unmasked portions of said surface layer, said growth characterized by single crystal regions on unmasked portions and polycrystalline or amorphous regions on said mask; (d) annealing, said anneal characterized by said single crystal regions extending laterally over said mask.
Claim 3
Dependent Claim
45 words
The method claim 1, wherein: (a) said first semiconductor material is silicon; (b) said mask is made of one of the group consisting of silicon dioxide, silicon nitride, and combinations thereof; and (c) said second semiconductor material is Al x Ga 1-x As for 0≦x≦1.0.
Claim 4
Dependent Claim
19 words
The method of claim 2, wherein: (a) said anneal is at a temperature between 750° C. and 900° C.
Claim 5
Dependent Claim
18 words
The method of claim 3, wherein: (a) said anneal is at approximately 850° C. for approximately fifteen minutes.
Claim 6
Independent Claim
126 words
A method of microcleaving, comprising the steps of: (a) providing a substrate with a surface layer of a first semiconductor material; (b) providing an insulating masking on said surface layer; (c) growing a second layer of a second semiconductor material on said mask and unmasked portions of said surface layer, said growth characterized by single crystal regions on unmasked portions and polycrystalline or amorphous regions on said mask; (d) annealing, said anneal characterized by said single crystal regions extending laterally over said mask; (e) removing the portion of said sensor layer away from said exposed portions and said mask; and (f) applying force to portions of said second layer over areas where said mask was removed, said force characterized by intensity to cleave said second layer.
Claim 7
Independent Claim
126 words
A method of microcleaving, comprising the steps of: (a) providing a substrate with a surface layer of a first semiconductor material; (b) providing an insulating masking on said surface layer; (c) growing a second layer of a second semiconductor material on said mask and unmasked portions of said surface layer, said growth characterized by single crystal regions on unmasked portions and polycrystalline or amorphous regions on said mask; (d) annealing, said anneal characterized by said single crystal regions extending laterally over said mask; (e) removing the portion of said sensor layer away from said exposed portions and said mask; and (f) applying force to portions of said second layer over areas where said mask was removed, said force characterized by intensity to cleave said second layer.
Claim 8
Dependent Claim
45 words
The method claim 5, wherein: (a) said first semiconductor material is silicon; (b) said mask is made of one of the group consisting of silicon dioxide, silicon nitride, and combination thereof; and (c) said second semiconductor material is Al x Ga 1-x As for 0≦x≦1.0.
Claim 9
Dependent Claim
19 words
The method of claim 6, wherein: (a) said anneal is at a temperature between 750° C. and 900° C.
Claim 10
Dependent Claim
18 words
The method of claim 7, wherein: (a) said anneal is at approximately 850° C. for approximately fifteen minutes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-04-02 | 1993-10-02 | 1994-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-02 | 1997-10-02 | 1998-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-02 | 2001-10-02 | 2002-04-03 | $7700.00 | Window Closed / Lapsed |