US4707219A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated devices including cleaved semiconductor lasers
Assignee: Nokia Bell Labs
•
Filing: 1985-05-14
•
Granted: 1987-11-17
•
Expires: 2005-05-14
Abstract
Abstract A new technique called stop cleaving permits semiconductor lasers having etched mirrors to be fabricated on a common substrate with other optical or electronic components such as photodetectors and field-effect transistors.
Inventors
- 👤 Chung Y. Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:42
CPC Classifications
H; H10; H10P; H10P52/00; H01; H01S; H01S5/00; H01S5/02; H01S5/0201; H01S5/0202; Y; Y10; Y10T; Y10T225/00; Y10T225/10
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
49 words
A process for fabricating a semiconductor device comprising semiconductor laser on a semiconductor substrate in which prior to cleaving the semiconductor substrate to form a facet of the semiconductor laser a hole is made in the substrate along the cleave plane so as to produce a stop cleave facet.
Claim 2
Dependent Claim
49 words
A process for fabricating a semiconductor device comprising semiconductor laser on a semiconductor substrate in which prior to cleaving the semiconductor substrate to form a facet of the semiconductor laser a hole is made in the substrate along the cleave plane so as to produce a stop cleave facet.
Claim 3
Dependent Claim
16 words
The process of claim 1 in which the hole is produced by wet or dry etching.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-16 | 1991-05-18 | 1991-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-16 | 1995-05-18 | 1995-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-16 | 1999-05-18 | 1999-11-17 | $7700.00 | Window Closed / Lapsed |