Fet sensor apparatus of flow-cell adaptive type and method of manufacturing the same

Claim 2

An FET sensor apparatus of flow-cell adaptive type, comprising: a sensor comprising a field-effect transistor formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and the field-effect transistor having at least a gate portion arranged on one of the major surfaces of the semiconductor substrate; a base member having a through hole in which said sensor is fitted; and support means for supporting said sensor in the through hole in watertight fashion, with said gate portion exposed through an end of said through hole; wherein said through hole of said base member has a shape complementary to that of said sensor; and wherein said through hole of said base member has a tapered surface and said sensor is exposed through the opening of said through hole having a smaller diameter.

Claim 3

The FET sensor apparatus according to claim 1, wherein said through hole includes a tapered small-diameter portion and a tapered large-diameter portion, and said sensor is fitted in the large-diameter portion of said through hole.

Claim 4

The FET sensor apparatus according to claim 1, further comprising material sensitive to a specific material, said sensitive material filling in the through hole of said base member to cover on the gate portion of said sensor.

Claim 5

The FET sensor apparatus according to claim 1, wherein said sensor is hexagonal in shape with two elongate opposed sides.

Claim 6

The FET sensor apparatus according to claim 1, wherein said base member has an electrode window aligned with said through hole.

Claim 7

An FET sensor apparatus of flow-cell adaptive type, comprising: a sensor comprising a field-effect transistor formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and the field-effect transistor having at least a gate portion arranged on one of the major surfaces of the semiconductor substrate; a base member having a through hole in which said sensor is fitted; and support means for supporting said sensor in the through hole in watertight fashion, with said gate portion exposed through an end of said through hole; wherein said base member is made of a semiconductor substrate of the same type as said semiconductor substrate of said sensor; the through hole of said base member has a shape complementary to that of said sensor; and wherein the through hole of said base member is tapered, and said sensor has a gate portion exposed through the smaller end of the through hole.

Claim 8

An FET sensor apparatus of flow-cell adaptive type, comprising: a sensor comprising a field-effect transistor formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and the field-effect transistor having at least a gate portion arranged on one of the major surfaces of the semiconductor substrate; a base member having a through hole in which said sensor is fitted; and support means for supporting said sensor in the through hole in watertight fashion, with said gate portion exposed through an end of said through hole; wherein said base member is made of a semiconductor substrate of the same type as said semiconductor substrate of said sensor; the through hole of said base member has a shape complementary to that of said sensor; and wherein the through hole of said base member is tapered, and said sensor has a gate portion exposed through the smaller end of the through hole.

Claim 9

The FET sensor apparatus according to claim 6, wherein said semiconductor substrate forming said base member has an insulation film which covers least that portion which has said through hole.

Claim 10

The FET sensor apparatus according to claim 6, wherein said tapered through hole includes a tapered large-diameter portion and a tapered small-diameter portion, and said sensor is fitted in the tapered large-diameter portion of said through hole.

Claim 11

An FET apparatus of flow-cell adaptive type, comprising: a sensor comprising a field-effect transistor formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and the field-effect transistor having at least a gate portion arranged on one of the major surfaces of the semiconductor substrate; a base member having a through hole in which said sensor is fitted; and support means for supporting said sensor in the through hole in watertight fashion, with said gate portion exposed through an end of said through hole; wherein said base member has a passage for a liquid sample, and said through hole opens to said passage; and wherein said base member has a groove communicating with said passage, and a reference electrode is formed on the bottom of said groove.

Claim 12

An FET apparatus of flow-cell adaptive type, comprising: a sensor comprising a field-effect transistor formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and the field-effect transistor having at least a gate portion arranged on one of the major surfaces of the semiconductor substrate; a base member having a through hole in which said sensor is fitted; and support means for supporting said sensor in the through hole in watertight fashion, with said gate portion exposed through an end of said through hole; wherein said base member has a passage for a liquid sample, and said through hole opens to said passage; and wherein said base member has a groove communicating with said passage, and a reference electrode is formed on the bottom of said groove.

Claim 13

An FET sensor apparatus of flow-cell adaptive type, comprising: a sensor comprising a plurality of field-effect transistors hexagonal in shape with two elongate opposed sides formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and each of the plurality of hexagonally-shaped field-effect transistors having at least a gate portion arranged on one of the major surfaces; a base member having a plurality of through holes in which said hexagonally-shaped field-effect transistors are fitted, respectively; and support means for supporting said hexagonally-shaped field-effect transistors in said through holes in watertight fashion, with said gate portions exposed through an end of said through hole; wherein said through hole of said base member has a shape complementary to that of said sensor; and wherein said through hole of said base member has a tapered surface, and said sensor is exposed through the opening of said through hole having a smaller diameter.

Claim 14

An FET sensor apparatus of flow-cell adaptive type, comprising: a sensor comprising a plurality of field-effect transistors hexagonal in shape with two elongate opposed sides formed on a semiconductor substrate, the semiconductor substrate having two major surfaces and a predetermined crystal plane, and each of the plurality of hexagonally-shaped field-effect transistors having at least a gate portion arranged on one of the major surfaces; a base member having a plurality of through holes in which said hexagonally-shaped field-effect transistors are fitted, respectively; and support means for supporting said hexagonally-shaped field-effect transistors in said through holes in watertight fashion, with said gate portions exposed through an end of said through hole; wherein said through hole of said base member has a shape complementary to that of said sensor; and wherein said through hole of said base member has a tapered surface, and said sensor is exposed through the opening of said through hole having a smaller diameter.

Claim 15

The FET sensor apparatus according to claim 10, wherein said field-effect transistors are electrically isolated from one another, by means of pn-junction isolation.

Claim 16

The FET sensor apparatus according to claim 10, wherein said base member is made of a semiconductor substrate of the same type of said semiconductor substrate on which said field-effect transistors are formed.

Claim 17

The FET sensor apparatus according to claim 12, wherein said semiconductor substrate forming said base member has an insulation film which covers at least those portions which have said through holes.

Claim 20

The method according to claim 14, further comprising the step of forming an insulation film on at least those portions which have said through holes, after said gate window has been formed.

Claim 21

A flow-cell adaptive type FET sensor apparatus, comprising: a sensor comprising a field-effect transistor hexagonal in shape with two elongate opposed sides formed on a first semiconductor substrate having a predetermined crystal face, a gate portion of said field-effect transistor being arranged on at least one of the side surfaces of said semiconductor substrate; a base member having a through hole, in which the sensor is fitted, formed by processing a second semiconductor substrate having a predetermined crystal face by use of an anisotropic etching operation; and support means for adhesively supporting said sensor in the through hole of said base member with said gate portion being exposed through an opening of said through hole when said sensor is inserted into said through hole of said base member.

Claim 22

A flow-cell adaptive type FET sensor apparatus, comprising: a sensor comprising a field-effect transistor hexagonal in shape with two elongate opposed sides formed on a first semiconductor substrate having a predetermined crystal face, a gate portion of said field-effect transistor being arranged on at least one of the side surfaces of said semiconductor substrate; a base member having a through hole, in which the sensor is fitted, formed by processing a second semiconductor substrate having a predetermined crystal face by use of an anisotropic etching operation; and support means for adhesively supporting said sensor in the through hole of said base member with said gate portion being exposed through an opening of said through hole when said sensor is inserted into said through hole of said base member.