Semiconductor device responsive to ions

Claim 2

A semiconductor device for selective response to the ions of a solution to which it is exposed, said device comprising: a substrate having first and second surfaces; a responsive layer positioned in a recessed area in a first region of said substrate on said first surface of said substrate; and a field effect transistor positioned in a second region of said substrate separate from said first region and including a source region, a channel region and a drain region formed on said second surface of said substrate, and a gate separated from said source, channel and drain regions by an insulating layer to form said field effect transistor; said gate being electrically floating and laterally extending from said field effect transistor in said second region to said first region in such a manner that it is capacitively coupled to said responsive layer in said first region and separated therefrom so as to minimize ion migration between said solution and said gate, said first region being spaced apart from said second region.

Claim 3

The device of claim 1 wherein the capacitative coupling occurs across a thin membrane of an insulating material.

Claim 4

The device of claim 2, wherein the substrate is an insulating material.

Claim 5

The device of claim 3, wherein the membrane is a thin part of the substrate.

Claim 6

The device of claim 4, wherein the thin part of the substrate also constitutes the responsive layer.

Claim 7

A semiconductor device for selective response to the ions of a solution to which it is exposed, said device comprising: a semiconductor substrate having first and second surfaces, said first surface having a source, channel and drain region formed in a first portion of said first surface, and insulating layer deposited over said first surface and a gate deposited over said insulating layer such that said gate is electrically floating and forms a field effect transistor in said first portion of the substrate in combination with said source, channel and drain regions; and an ion responsive layer deposited on a recessed area of said second surface of said substrate and constructed and arranged to be capacitively coupled through said insulating layer to said gate in a second portion of said substrate separate from said first portion, said second portion of said substrate being spaced laterally apart from said first portion of said substrate in which said field effect transistor is defined; wherein said insulating layer deposited on said first surface extends such that it forms a gate oxide region of the transistor in said first portion and extends between said gate and ion responsive layer in said second portion to form a layer across which said capacitive coupling occurs, said insulating layer being of a thickness to serve as a barrier to the migration of said ions between said solution and said gate.

Claim 8

A semiconductor device for selective response to the ions of a solution to which it is exposed, said device comprising: a semiconductor substrate having first and second surfaces, said first surface having a source, channel and drain region formed in a first portion of said first surface, and insulating layer deposited over said first surface and a gate deposited over said insulating layer such that said gate is electrically floating and forms a field effect transistor in said first portion of the substrate in combination with said source, channel and drain regions; and an ion responsive layer deposited on a recessed area of said second surface of said substrate and constructed and arranged to be capacitively coupled through said insulating layer to said gate in a second portion of said substrate separate from said first portion, said second portion of said substrate being spaced laterally apart from said first portion of said substrate in which said field effect transistor is defined; wherein said insulating layer deposited on said first surface extends such that it forms a gate oxide region of the transistor in said first portion and extends between said gate and ion responsive layer in said second portion to form a layer across which said capacitive coupling occurs, said insulating layer being of a thickness to serve as a barrier to the migration of said ions between said solution and said gate.

Claim 9

A semiconductor device for selective response to the ions of a solution to which it is exposed, said device comprising: a substrate having first and second surfaces, said substrate having source, channel and drain regions deposited on said first surface on a first portion of said substrate, an insulating layer deposited over said source, channel and drain regions, and an electrically floating gate deposited over said insulating layer to form a field effect transistor in said first portion of said substrate in combination with said source, channel and drain regions; and an ion responsive layer formed on a recessed area of said second surface in a second portion of said substrate separate from said first portion and laterally spaced from said first portion, said floating gate extending from said first portion to said second portion such that said gate and ion responsive layer are capacitively coupled in said second portion, and separated so as to prevent ion migration between said solution and said gate.

Claim 10

A semiconductor device for selective response to the ions of a solution to which it is exposed, said device comprising: a substrate having first and second surfaces, said substrate having source, channel and drain regions deposited on said first surface on a first portion of said substrate, an insulating layer deposited over said source, channel and drain regions, and an electrically floating gate deposited over said insulating layer to form a field effect transistor in said first portion of said substrate in combination with said source, channel and drain regions; and an ion responsive layer formed on a recessed area of said second surface in a second portion of said substrate separate from said first portion and laterally spaced from said first portion, said floating gate extending from said first portion to said second portion such that said gate and ion responsive layer are capacitively coupled in said second portion, and separated so as to prevent ion migration between said solution and said gate.

Claim 11

The device of claim 7 wherein said ion responsive layer is formed by eroding the second surface of said substrate to form said ion responsive layer is said recessed area in said second portion.