US4961833A
Expired / Lapsed
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Field-effect transistor-type semiconductor sensor
Assignee: Toshiba Corp
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Filing: 1989-03-23
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Granted: 1990-10-09
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Expires: 2009-03-23
Abstract
Abstract A field-effect transistor-type semiconductor sensor is provided which comprises first and second semiconductor substrates bonded strongly to each other interposing a silicon oxide film therebetween by the use of a direct-bonding technique. The first semiconductor substrate is formed into an island-shape, and incorporates a source region, a drain region and a gate region. The island-shaped substrate constitutes an ion-sensitive portion, and is immersed in a solution when in use. The second semiconductor substrate has openings in which source and drain electrodes are formed.
Inventors
- 👤 Tadashi Sakai
- 👤 Shigeki Uno
- 👤 Masao Koyama
- 👤 Nanao Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:52
CPC Classifications
G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/414; Y; Y10; Y10S; Y10S435/00; Y10S435/817
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
98 words
A field-effect transistor-type semiconductor sensor comprising: a first semiconductor substrate; a second semiconductor substrate bonded directly to said first semiconductor substrate interposing an oxide film therebetween; a source region, a channel region and a drain region, each being provided in said first semiconductor substrate; a first insulating film on said first semiconductor substrate; a second insulating film on said first insulating film, said second insulating film being sensitive to a specified ion; and a source electrode and a drain electrode, each being connected to a corresponding one of said source and drain regions through said second semiconductor substrate.
Claim 2
Dependent Claim
98 words
A field-effect transistor-type semiconductor sensor comprising: a first semiconductor substrate; a second semiconductor substrate bonded directly to said first semiconductor substrate interposing an oxide film therebetween; a source region, a channel region and a drain region, each being provided in said first semiconductor substrate; a first insulating film on said first semiconductor substrate; a second insulating film on said first insulating film, said second insulating film being sensitive to a specified ion; and a source electrode and a drain electrode, each being connected to a corresponding one of said source and drain regions through said second semiconductor substrate.
Claim 3
Dependent Claim
15 words
The sensor of claim 1, wherein said first and second semiconductor substrates include monocrystalline silicon.
Claim 4
Dependent Claim
34 words
The sensor of claim 1, wherein said first insulating film includes a silicon oxide film, and said second insulating film includes a silicon nitride film, a tantalum oxide film and an aluminum oxide film.
Claim 5
Dependent Claim
15 words
The sensor of claim 1, wherein said first semiconductor substrate is formed as an island.
Claim 6
Dependent Claim
18 words
The sensor of claim 4, further comprising first and second insulating films covering the periphery of the sensor.
Claim 7
Dependent Claim
32 words
The sensor of claim 4, further comprising first and second insulating films formed on the surfacee of said island-shaped semiconductor substrate, said films extending to the surface of said second semiconductor substrate.
Claim 8
Dependent Claim
18 words
The sensor of claim 4, including a plurality of island-shaped semiconductor substrates bonded to said second semiconductor substrate.
Claim 9
Dependent Claim
18 words
The sensor of claim 7, further comprising first and second insulating films covering the periphery of the sensor.
Claim 10
Dependent Claim
34 words
The sensor of claim 7, further comprising first and second insulating films formed on the surface of said plural island-shaped first semiconductor substrates, said films extending to the surface of said second semiconductor substrate.
Claim 11
Dependent Claim
17 words
The sensor of claim 9, further comprising the film being sensitive covering on the second insulating film.
Claim 12
Dependent Claim
24 words
The sensor of claim 10, the film includes an ion sensitive film, an enzyme or microorganism selective sensitive film, or a gas permeable film.
Claim 13
Dependent Claim
25 words
The sensor of claim 7, further comprising a semiconductor protrusion provided on said second semiconductor substrate, said protrusion surrounding said plural first island-shaped semiconductor substrates.
Claim 14
Dependent Claim
18 words
The sensor of claim 12, further comprising a film being a sensitive covering on the second insulating film.
Claim 15
Dependent Claim
24 words
The sensor of claim 13, the film includes an ion sensitive film, an enzyme or microorganism selective sensitive film, or a gas permeable film.
Claim 16
Dependent Claim
17 words
The sensor of claim 13, the film covers on the sensor are inside of the semiconductor protrusion.
Claim 17
Dependent Claim
24 words
The sensor of claim 4, further comprising a semiconductor protrusion provided on said second semiconductor substrate, said protrusion surrounding said first island-shaped semiconductor substrate.
Claim 18
Dependent Claim
43 words
The sensor of claim 1, further comprising two openings in the second substrate, one opening having a source electrode therein and the other opening having a drain electrode therein, each electrode being connected to a corresponding one of said source and drain regions.
Claim 19
Dependent Claim
35 words
The sensor of claim 1, further comprising a single opening in the second substrate having both source and drain electrodes therein, each electrode being connected to a corresponding one of said source and drain regions.
Claim 20
Dependent Claim
28 words
The sensor of claim 1, further comprising a temperature-compensating diode in said first semiconductor substrate at a position adjoining one of said source region and said drain region.
Claim 21
Dependent Claim
19 words
The sensor of claim 1, wherein said first semiconductor substrate has a thickness of 10 μm at a minimum.
Claim 22
Dependent Claim
51 words
The sensor of claim 1, wherein said channel region includes a channel stopper region provided at a position adjoining the oxide film on said second semiconductor substrate, said channel stopper region having the same conductivity-type as that of said channel region, and having a higher impurity concentration than said channel region.
Claim 23
Dependent Claim
23 words
The sensor of claim 1, further comprising a semiconductor protrusion provided on said second semiconductor substrate, said protrusion surrounding said first semiconductor substrate.
Claim 24
Dependent Claim
23 words
The sensor of claim 1, further comprising an insulating member for incorporating the sensor, said insulating member exposing only the ion-sensitive insulating film.
Claim 25
Dependent Claim
13 words
The sensor of claim 23, wherein said insulating member is made of resin.
Claim 26
Dependent Claim
11 words
The sensor of claim 24, wherein said resin includes epoxy resin.
Claim 27
Dependent Claim
18 words
The sensor of claim 1, further comprising a film being a sensitive covering on the second insulating film.
Claim 28
Dependent Claim
24 words
The sensor of claim 26, the film includes an ion sensitive film, an enzyme or microorganism selective sensitive film, or a gas permeable film.
Claim 29
Dependent Claim
132 words
A field-effect transistor-type semiconductor sensor comprising: a first semiconductor substrate; a second semiconductor substrate bonded directly to said first semiconductor substrate interposing an oxide film therebetween; a source region, a channel region and a drain region, each being provided in said first semiconductor substrate; a first insulating film on said first semiconductor substrate; a second insulating film on said first insulating film, said second insulating film being sensitive to a specified ion; and a source electrode and a drain electrode, each being connected to a corresponding one of said source and drain regions; wherein there are two openings in the second substrate, one opening having a source electrode therein and the other opening having a drain electrode therein, each electrode being connected to a corresponding one of said source and drain regions.
Claim 30
Dependent Claim
132 words
A field-effect transistor-type semiconductor sensor comprising: a first semiconductor substrate; a second semiconductor substrate bonded directly to said first semiconductor substrate interposing an oxide film therebetween; a source region, a channel region and a drain region, each being provided in said first semiconductor substrate; a first insulating film on said first semiconductor substrate; a second insulating film on said first insulating film, said second insulating film being sensitive to a specified ion; and a source electrode and a drain electrode, each being connected to a corresponding one of said source and drain regions; wherein there are two openings in the second substrate, one opening having a source electrode therein and the other opening having a drain electrode therein, each electrode being connected to a corresponding one of said source and drain regions.
Claim 31
Dependent Claim
122 words
A field-effect transistor-type semiconductor sensor comprising: a first semiconductor substrate; a second semiconductor substrate bonded directly to said first semiconductor substrate interposing an oxide film therebetween; a source region, a channel region and a drain region, each being provided in said first semiconductor substrate; a first insulating film on said first semiconductor substrate; a second insulating film on said first insulating film, said second insulating film being sensitive to a specified ion; and a source electrode and a drain electrode, each being connected to a corresponding one of said source and drain regions; wherein a single opening in the second substrate having both source and drain electrodes therein, each electrode being connected to a corresponding one of said source and drain regions.
Claim 32
Dependent Claim
122 words
A field-effect transistor-type semiconductor sensor comprising: a first semiconductor substrate; a second semiconductor substrate bonded directly to said first semiconductor substrate interposing an oxide film therebetween; a source region, a channel region and a drain region, each being provided in said first semiconductor substrate; a first insulating film on said first semiconductor substrate; a second insulating film on said first insulating film, said second insulating film being sensitive to a specified ion; and a source electrode and a drain electrode, each being connected to a corresponding one of said source and drain regions; wherein a single opening in the second substrate having both source and drain electrodes therein, each electrode being connected to a corresponding one of said source and drain regions.
Claim 33
Dependent Claim
115 words
A field-effect transistor-type semiconductor sensor comprising: a first semiconductor substrate; a second semiconductor substrate bonded directly to said first semiconductor substrate interposing an oxide film therebetween; a source region, a channel region and a drain region, each being provided in said first semiconductor substrate; a first insulating film on said first semiconductor substrate; a second insulating film on said first insulating film, said second insulating film being sensitive to a specified ion; and a source electrode and a drain electrode, each being connected to a corresponding one of said source and drain regions; wherein a temperature-compensating diode in said first semiconductor substrate at a position adjoining one of said source region and said drain region.
Claim 34
Dependent Claim
115 words
A field-effect transistor-type semiconductor sensor comprising: a first semiconductor substrate; a second semiconductor substrate bonded directly to said first semiconductor substrate interposing an oxide film therebetween; a source region, a channel region and a drain region, each being provided in said first semiconductor substrate; a first insulating film on said first semiconductor substrate; a second insulating film on said first insulating film, said second insulating film being sensitive to a specified ion; and a source electrode and a drain electrode, each being connected to a corresponding one of said source and drain regions; wherein a temperature-compensating diode in said first semiconductor substrate at a position adjoining one of said source region and said drain region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-08 | 1994-04-09 | 1994-10-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-08 | 1998-04-09 | 1998-10-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-08 | 2002-04-09 | 2002-10-09 | $7700.00 | Window Closed / Lapsed |