Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
141 words
An apparatus for detecting a concentration of components in a fluid, comprising: a semiconductor substrate having a doping polarity; at least two diffusion regions located at a surface of said substrate; an electrically insulating layer overlying the surface of said substrate except for that portion of the substrate surface between said diffusion regions; a bridge member mounted to said insulating layer so as to form a gap between said bridge member and said substrate, said bridge member allowing for passage of fluid into said gap and said bridge member being capable of having an electrical charge imposed upon it, said gap further providing for electrical insulation between said bridge member and the surface of said substrate between said diffusion regions; means for imposing an electrical charge on said bridge member; and means for imposing an electrical potential between said diffusion regions.
Claim 2
Independent Claim
141 words
An apparatus for detecting a concentration of components in a fluid, comprising: a semiconductor substrate having a doping polarity; at least two diffusion regions located at a surface of said substrate; an electrically insulating layer overlying the surface of said substrate except for that portion of the substrate surface between said diffusion regions; a bridge member mounted to said insulating layer so as to form a gap between said bridge member and said substrate, said bridge member allowing for passage of fluid into said gap and said bridge member being capable of having an electrical charge imposed upon it, said gap further providing for electrical insulation between said bridge member and the surface of said substrate between said diffusion regions; means for imposing an electrical charge on said bridge member; and means for imposing an electrical potential between said diffusion regions.
Claim 3
Dependent Claim
14 words
An apparatus as defined in claim 1 wherein said insulating layer comprises silicon dioxide.
Claim 4
Dependent Claim
14 words
An apparatus as defined in claim 1 wherein said insulating layer comprises silicon nitride.
Claim 5
Dependent Claim
36 words
An apparatus as defined in claim 1 further comprising an adsorptive coating applied to the surface of said substrate between said diffusion regions, said adsorptive coating being capable of selectively adsorbing certain components of the fluid.
Claim 6
Dependent Claim
30 words
An apparatus as defined in claim 1 further comprising an adsorptive coating applied to said bridge member, said adsorptive coating being capable of selectively adsorbing certain components of the fluid.
Claim 7
Dependent Claim
38 words
An apparatus as defined in claim 1 further comprising an absorptive coating applied to said bridge member, said absorptive coating being capable of conducting an electric current and being capable of selectively absorbing certain components of the fluid.
Claim 8
Dependent Claim
33 words
A apparatus as defined in claim 1 wherein a distance between said bridge member and said substrate forming said gap is in the range of between about 0.05 microns and about 10 microns.
Claim 9
Dependent Claim
33 words
An apparatus as defined in claim 1 wherein a distance between said bridge member and said substrate forming said gap is in the range of between about 0.1 microns and about 1 micron.
Claim 10
Dependent Claim
18 words
An apparatus as defined in claim 1 further comprising means for detecting current flow between said diffusion regions.
Claim 11
Dependent Claim
34 words
An apparatus as defined in claim 1 wherein said bridge member is made of a metal selected from the group consisting of gold, platinum, silver, aluminum, and an alloy of any of the foregoing.
Claim 12
Dependent Claim
12 words
An apparatus as defined in claim 1 wherein said substrate comprises silicon.
Claim 13
Dependent Claim
117 words
An improved field effect transistor of the type having a semiconductor substrate with a doping polarity, at least two diffusion regions located at a surface of said substrate; an electrically insulating layer overlying the surface of said substrate except for that portion of the substrate surface between said diffusion regions; and means for imposing an electrical potential between said diffusion regions, wherein the improvement comprises: a bridge member mounted to the insulating layer so as to form a gap between said bridge member and said substrate, said bridge member allowing for passage of fluid therethrough and being capable of having an electrical charge imposed upon it; and means for imposing an electrical charge on the bridge member.
Claim 14
Dependent Claim
117 words
An improved field effect transistor of the type having a semiconductor substrate with a doping polarity, at least two diffusion regions located at a surface of said substrate; an electrically insulating layer overlying the surface of said substrate except for that portion of the substrate surface between said diffusion regions; and means for imposing an electrical potential between said diffusion regions, wherein the improvement comprises: a bridge member mounted to the insulating layer so as to form a gap between said bridge member and said substrate, said bridge member allowing for passage of fluid therethrough and being capable of having an electrical charge imposed upon it; and means for imposing an electrical charge on the bridge member.
Claim 15
Dependent Claim
24 words
An improved field effect transistor as defined in claim 12 wherein the improvement further comprises means for detecting current flow between the diffusion regions.
Claim 16
Dependent Claim
42 words
An improved field effect transistor as defined in claim 12 wherein the improvement further comprises an adsorptive coating applied to the surface of the substrate between said diffusion regions, said adsorptive coating being capable of selectively adsorbing certain components of the fluid.
Claim 17
Dependent Claim
36 words
An improved field effect transistor as defined in claim 12 wherein the improvement further comprises an adsorptive coating applied to the bridge member, said adsorptive coating being capable of selectively adsorbing certain components of the fluid.
Claim 18
Dependent Claim
44 words
An improved field effect transistor as defined in claim 12 wherein the improvement further comprises an absorptive coating applied to the bridge member, said absorptive coating being capable of conducting an electric current and being capable of selectively absorbing certain components of the fluid.
Claim 19
Independent Claim
147 words
A method for detecting a concentration of components in a fluid, comprising the steps of: doping a semiconductor substrate so as to impart a doping polarity to the substrate; forming at least two diffusion regions at the surface of the substrate; positioning an electrically insulating layer over the surface of the substrate except for that portion of the substrate surface between the diffusion regions; mounting a bridge member to the insulating layer so as to form a gap between the bridge member and the substrate, the gap providing for electrical insulation between the bridge member and the surface of the substrate between the diffusion regions; imposing an electrical charge on the bridge member; imposing an electrical potential between the diffusion regions; introducing a fluid through the bridge member and into the gap between the bridge member and the substrate; and detecting current flow between the diffusion regions.
Claim 20
Independent Claim
147 words
A method for detecting a concentration of components in a fluid, comprising the steps of: doping a semiconductor substrate so as to impart a doping polarity to the substrate; forming at least two diffusion regions at the surface of the substrate; positioning an electrically insulating layer over the surface of the substrate except for that portion of the substrate surface between the diffusion regions; mounting a bridge member to the insulating layer so as to form a gap between the bridge member and the substrate, the gap providing for electrical insulation between the bridge member and the surface of the substrate between the diffusion regions; imposing an electrical charge on the bridge member; imposing an electrical potential between the diffusion regions; introducing a fluid through the bridge member and into the gap between the bridge member and the substrate; and detecting current flow between the diffusion regions.
Claim 21
Dependent Claim
26 words
A method as defined in claim 17 further comprising the step of applying an adsorptive coating to the surface of the substrate between the diffusion regions.
Claim 22
Dependent Claim
20 words
A method as defined in claim 17 further comprising the step of applying an adsorptive coating to the bridge member.
Claim 23
Dependent Claim
30 words
A method as defined in claim 17 further comprising the step of applying an absorptive coating to the bridge member, said absorptive coating being capable of conducting an electric current.