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EP0063455A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method for the fabrication of encapsulated chemoresponsive microelectronic device arrays

Assignee: Bayer Corp
•
Filing: 1982-04-08
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Granted: —
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Expires: 2002-04-08
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Abstract

Abstract The invention provides a chemical-responsive field-effect transducer operating in depletion-mode, or enhance- mentldepletion-mode, comprising: a semiconductor material having a pair of adjacent diffusion regions (1, 2) of a certain doping polarity located at the surface and separated by a channel (3) of the same doping polarity, said channel being created by diffusion, ion-implantation, epitaxial growth, or creation of a surface inversion layer by controlled processing techniques or other means. The diffusion regions and channel region are supported by an insulating substrate (4) or semiconductor substrate of opposite polarity. Electrical insulator (6) and/or ion-barrier material (7) overlies the aforementioned channel region. An electroactive material (10) overlies said insulator and/or ion-barrier, such that the electroactive material will interact with substances to which it is exposed and control the charge-carrier density in the aforementioned channel. Such devices form the basis of a variety of assemblies, including flow-injection-analysis sensors, and flow-through cuvettes suitable for the continuous or intermittent on-line monitoring of blood, ex-vivo, in the clinical environment.

Inventors

  • 👤 Alastair Sibbald
  • 👤 Arthur Kenneth Covington

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-06 08:57
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; A; A61; A61B; A61B5/00; A61B5/145; A61B5/14542; A61B5/1468; A61B5/1473; G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/414; G11; G11C; G11C13/00; G11C13/02; H10D64/693; H10W; H10W74/00; H10W74/01; H10W74/10; H10W74/131; H10W74/147; H10W74/40; H10W74/47; H10W72/00; H10W72/50; H10W72/551; H10W72/552; H10W90/00; H10W90/701; H10W90/751; H10W90/753; H10W90/754; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 107 words
A chemical-responsive field-effect transducer adapted to operate in depletion-mode, or enhancement/ depletion-mode, comprising: a semiconductor material having a pair of adjacent diffusion-regions (1,2) of a certain doping polarity located at the surface and spearated by a channel (3) of the same doping polarity, said diffusion regions and channel region being supported by an insulating substrate (4) or semiconductor substrate of opposite polarity;.electrical insulator (6) and/or ion-barrier material (7) overlying the aforementioned channel region: and an electroactive material (10) overlying said insulator and/or ion barrier, such that the electroactive material can interact with substances to which it is exposed and control the charge-carrier density in the aforementioned channel.
Claim 2
Dependent Claim 107 words
A chemical-responsive field-effect transducer adapted to operate in depletion-mode, or enhancement/ depletion-mode, comprising: a semiconductor material having a pair of adjacent diffusion-regions (1,2) of a certain doping polarity located at the surface and spearated by a channel (3) of the same doping polarity, said diffusion regions and channel region being supported by an insulating substrate (4) or semiconductor substrate of opposite polarity;.electrical insulator (6) and/or ion-barrier material (7) overlying the aforementioned channel region: and an electroactive material (10) overlying said insulator and/or ion barrier, such that the electroactive material can interact with substances to which it is exposed and control the charge-carrier density in the aforementioned channel.
Claim 3
Dependent Claim 31 words
A transducer according to claim 1, wherein said channel has been created by diffusion, ion-implantation, epitaxial growth, or creation of a surface inversion layer by controlled processing techniques or other means.
Claim 4
Dependent Claim 33 words
A transducer according to claim 1 or 2, encapsulated with polymeric materials similar to, and including, Bis-GMA and Bis-GMA urethane adducts, such materials being polymerised by chemical means, thermally, or by U.V. irradiation.
Claim 5
Dependent Claim 28 words
A transducer according to claim 3, in which selective encapsulation is achieved by restricting the area of application of encapsulating agent with an appropriately directed jet of gas.
Claim 6
Dependent Claim 27 words
An array of transducers according to any of claims 1 to 4, in which the individual elements possess similar or dissimilar electroactive materials overlying each channel region.
Claim 7
Dependent Claim 16 words
A transducer device including an element or elements according to any of claims 1 to 5.
Claim 8
Dependent Claim 15 words
Apparatus comprising a transducer or transducer device according to any of claims 1 to 6.
Claim 9
Dependent Claim 7 words
A flow-injection-analysis system according to claim 7.
Claim 10
Dependent Claim 8 words
A flow-through cuvette system according to claim 7.
Claim 11
Independent Claim 43 words
A method of selectively'encapsulating a microelectronic transducer or sensor device, which comprises applying thereto a polymerisable encapsulating material, and effecting polymerisation of said material, characterised in that the area of application of said material is restricted with an appropriately directed jet of gas.
Claim 12
Independent Claim 43 words
A method of selectively'encapsulating a microelectronic transducer or sensor device, which comprises applying thereto a polymerisable encapsulating material, and effecting polymerisation of said material, characterised in that the area of application of said material is restricted with an appropriately directed jet of gas.

References Cited (Backward Citations)

US3431182A Cited
CH479870A Cited
GB1529743A Cited
DE2822787A1 Cited
FR2400258A1 Cited
GB2010011A Cited
US4198851A Cited

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