US5134539A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multichip module having integral decoupling capacitor
Assignee: NCHIP Inc A CORP OF
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Filing: 1990-12-17
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Granted: 1992-07-28
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Expires: 2010-12-17
Abstract
Abstract An integral decoupling capacitor for a multichip module. The capacitor is formed over a support base material which need not be conductive. A first plate is formed by deposition of an anodizable metal. The metal is then anodized to form a dielectric layer. A second layer of metal is then formed over the dielectric layer. The formation of the capacitor over the surface of the wafer allows modules to be inventoried. Direct contact to the metal forming the capacitor plates relieves the support base from any requirement to be conductive.
Inventors
- 👤 David B. Tuckerman
- 👤 Pandharinath A. Mhaskar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:05
CPC Classifications
H; H10; H10W; H10W44/00; H10W44/601; H05; H05K; H05K1/00; H05K1/16; H10W72/00; H10W72/50; H10W72/531; H10W72/5363; H10W72/851; H10W72/874; H10W72/884; H10W90/00; H10W90/701; H10W90/731; H10W90/734; H10W90/751; H10W90/754; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
80 words
A method for forming an integral decoupling capacitor for a multichip module comprising the steps of: (a) providing a support base; (b) depositing a layer of anodizable metal over substantially all of a top surface of said support base of said module; (c) anodizing said layer of anodizable metal to form a dielectric layer; and (d) depositing a layer of metal over said dielectric layer; wherein said integral decoupling capacitor is formed over substantially an entire area of said module.
Claim 2
Independent Claim
80 words
A method for forming an integral decoupling capacitor for a multichip module comprising the steps of: (a) providing a support base; (b) depositing a layer of anodizable metal over substantially all of a top surface of said support base of said module; (c) anodizing said layer of anodizable metal to form a dielectric layer; and (d) depositing a layer of metal over said dielectric layer; wherein said integral decoupling capacitor is formed over substantially an entire area of said module.
Claim 3
Dependent Claim
27 words
The method for forming an integral decoupling capacitor of claim 1 wherein said step of depositing said layer of anodizable metal comprises the step of sputtering aluminum.
Claim 4
Dependent Claim
44 words
The method for forming an integral decoupling capacitor of claim 1 wherein said support base is selected from one of the group consisting of: crystalline silicon, polycrystalline silicon, Al 2 O 3 , AlN, copper tungsten alloy, quartz, glass, and a BeO silicon composite.
Claim 5
Dependent Claim
31 words
The method for forming an integral decoupling capacitor of claim 1 further comprising the step of disposing a layer of silicon dioxide between said dielectric layer and said layer of metal.
Claim 6
Dependent Claim
31 words
The method of forming an integral decoupling capacitor of claim 1 further comprising the step of disposing a layer of silicon nitride between said dielectric layer and said layer of metal.
Claim 7
Dependent Claim
30 words
The method for forming an integral decoupling capacitor of claim 1 further comprising the step of forming an insulating layer between said support base and said layer of anodizable metal.
Claim 8
Dependent Claim
56 words
The method of forming an integral decoupling capacitor of claim 1 wherein said layer of metal comprises a second layer of anodizable metal and further comprising the steps of: (e) anodizing said second layer of anodizable metal to form a second dielectric layer; and (f) depositing a second layer of metal over said second dielectric layer.
Claim 9
Dependent Claim
25 words
The method of forming an integral decoupling capacitor of claim 7 further comprising the steps of: (g) repeating step (d); and (h) repeating step (e).
Claim 10
Dependent Claim
30 words
The method for forming an integral decoupling capacitor of claim 1 wherein the step of providing a support base further comprises the step of providing a substantially nonconductive support base.
Claim 11
Independent Claim
104 words
A method for fabricating a multichip module having an integral decoupling capacitor comprising the steps of: (a) providing a support base to said module; (b) depositing a layer of anodizable metal over a surface area of said support base; (c) anodizing said layer of anodizable metal to form a dielectric layer; (d) depositing a layer of metal over said dielectric layer; (e) depositing an insulating layer; and (f) depositing a metal signal layer on top of said insulating layer; (g) forming a first via to contact said layer of anodizable metal; and (h) forming a second via to contact said second layer of metal.
Claim 12
Independent Claim
104 words
A method for fabricating a multichip module having an integral decoupling capacitor comprising the steps of: (a) providing a support base to said module; (b) depositing a layer of anodizable metal over a surface area of said support base; (c) anodizing said layer of anodizable metal to form a dielectric layer; (d) depositing a layer of metal over said dielectric layer; (e) depositing an insulating layer; and (f) depositing a metal signal layer on top of said insulating layer; (g) forming a first via to contact said layer of anodizable metal; and (h) forming a second via to contact said second layer of metal.
Claim 13
Dependent Claim
30 words
The method for forming a multichip module of claim 10 further comprising the step of: disposing a layer of silicon dioxide between said dielectric layer and said layer of metal.
Claim 14
Dependent Claim
30 words
The method for forming a multichip module of claim 10 further comprising the step of: disposing a layer of silicon nitride between said dielectric layer and said layer of metal.
Claim 15
Dependent Claim
54 words
The method for forming a multichip module of claim 10 wherein said layer of metal comprises a second layer of anodizable metal and further comprising the steps of: (i) anodizing said second layer of anodizable metal to form a second dielectric layer; and (j) depositing a second layer of metal over said dielectric layer.
Claim 16
Dependent Claim
24 words
The method for forming a multichip module of claim 13 further comprising the steps of: (k) repeating step (d); and (l) repeating step (i).
Claim 17
Dependent Claim
44 words
The method for fabricating a multichip module of claim 10 further comprising the steps of: forming a passivation layer over said metal signal layer; and etching said passivation layer to form a bond pad for electrically contacting an integrated circuit to said multichip module.
Claim 18
Dependent Claim
26 words
The method for forming a multichip module of claim 10 wherein said step of depositing said layer of anodizable metal comprises the step of sputtering aluminum.
Claim 19
Dependent Claim
43 words
The method for forming a multichip module of claim 10 wherein said support base is selected from one of the group consisting of: crystalline silicon, polycrystalline silicon, Al 2 O 3 , AlN, copper tungsten alloy, quartz, glass, and a BeO silicon composite.
Claim 20
Dependent Claim
30 words
The method for forming a multichip module of claim 10 further comprising the step of forming an insulating layer between said support base and said first layer of anodizable metal.
Claim 21
Dependent Claim
24 words
The method of forming a multichip module of claim 10 wherein said integral capacitor is formed over substantially an entire area of said module.
Claim 22
Dependent Claim
29 words
The method for fabricating a multichip module of claim 10, wherein the step of providing a support base further comprises the step of providing a substantially nonconductive support base.
Claim 23
Dependent Claim
55 words
An integral decoupling capacitor for a multichip module having a support base and comprising: a first plate formed of anodizable metal and formed over substantially all of a top surface of the support base; a dielectric layer formed by anodization of said first plate; and a second plate, formed of metal, over said dielectric layer.
Claim 24
Dependent Claim
55 words
An integral decoupling capacitor for a multichip module having a support base and comprising: a first plate formed of anodizable metal and formed over substantially all of a top surface of the support base; a dielectric layer formed by anodization of said first plate; and a second plate, formed of metal, over said dielectric layer.
Claim 25
Dependent Claim
29 words
The integral decoupling capacitor of claim 21 further comprising: a second dielectric layer formed by anodization of said second plate of metal wherein said second plate comprises anodizable metal.
Claim 26
Dependent Claim
13 words
The integral decoupling capacitor of claim 21 wherein said anodizable metal comprises aluminum.
Claim 27
Dependent Claim
23 words
The integral decoupling capacitor of claim 21 further comprising a layer of silicon dioxide disposed between said dielectric layer and said second plate.
Claim 28
Dependent Claim
23 words
The integral decoupling capacitor of claim 21 further comprising a layer of silicon nitride disposed between said dielectric layer and said second plate.
Claim 29
Dependent Claim
64 words
A multichip module for interconnecting a plurality of integrated circuits comprising: a support base; a layer of anodizable metal formed over said support base; a dielectric layer formed by anodization of said layer of anodizable metal; a layer of metal located over said dielectric layer; an insulating layer located over said layer of metal; and a metal signal layer located over said insulating layer.
Claim 30
Dependent Claim
64 words
A multichip module for interconnecting a plurality of integrated circuits comprising: a support base; a layer of anodizable metal formed over said support base; a dielectric layer formed by anodization of said layer of anodizable metal; a layer of metal located over said dielectric layer; an insulating layer located over said layer of metal; and a metal signal layer located over said insulating layer.
Claim 31
Dependent Claim
37 words
The multichip module of claim 26 wherein said support base is selected from the group consisting of: crystalline silicon, polycrystalline silicon, Al 2 O 3 , AlN, copper tungsten alloy, quartz, glass, and a BeO silicon composite.
Claim 32
Dependent Claim
46 words
The multichip module of claim 26 further comprising: a second dielectric layer formed by anodization of said second layer of metal, wherein said second layer of metal comprises anodizable metal; and a third layer of metal disposed between said second dielectric layer and said insulating layer.
Claim 33
Dependent Claim
12 words
The multichip module of claim 26 wherein said anodizable metal comprises aluminum.
Claim 34
Dependent Claim
23 words
The multichip module of claim 26 further comprising a layer of silicon dioxide disposed between said dielectric layer and said layer of metal.
Claim 35
Dependent Claim
23 words
The multichip module of claim 26 further comprising a layer of silicon nitride disposed between said dielectric layer and said layer of metal.
Claim 36
Dependent Claim
13 words
The multichip module of claim 26 wherein said support base is substantially nonconductive.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-07-28 | 1996-01-27 | 1996-07-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-07-28 | 2000-01-27 | 2000-07-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-07-28 | 2004-01-27 | 2004-07-28 | $7700.00 | Window Closed / Lapsed |