US3320484A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dielectric devices
Assignee: Texas Instruments Inc
•
Filing: 1963-11-12
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Granted: 1967-05-16
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Expires: 1983-11-12
Abstract
No abstract record available.
Inventors
- 👤 James E Riley
- 👤 Billy B Williams
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 19:15
CPC Classifications
H; H01; H01G; H01G9/00; H01G9/0029; H01G9/0032
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
139 words
A SEMICONDUCTOR INTEGRATED CIRCUIT COMPRISING AT LEAST ONE ACTIVE ELECTRICAL ELEMENT, AT LEAST ONE PASSIVE ELECTRICAL ELEMENT, AND AT LEAST ONE TWO DIMENSIONAL THIN FILM CAPACITOR ELEMENT, SAID CAPACITOR ELEMENT COMPRISING A HIGH RESISTIVITY SEMICONDUCTOR WAFER SUBSTRATE, A SUBSTANTIALLY PLANAR THIN LAYER OF ALUMINUM VAPOR DEPOSIT ON SAID SUBSTRATE, A THIN DIELECTRIC LAYER SELECTED FROM THE GROUP CONSISTING OF TANTALUM OXIDE, SILICON OXIDE, TITANIUM OXIDE, A GLASSY INSULATING CERAMIC, CERIUM FLUORIDE BORON NITRIDE AND SILICON NITRIDE, A THIN MANGANESE DIOXIDE FILM HAVING A THICKNESS IN THE RANGE OF 500 TO 1500 A. OVERLYING SAID DIELECTRIC LAYER, ELECTRICAL CONDUCTING MEANS IN CONTACT WITH SAID THIN MANGANESE DIOXIDE FILM; AND ELECTRICAL CIRCUIT MEANS EXTENDING TO AND MAKING ELECTRICAL CONNECTION WITH AT LEAST ONE SAID ACTIVE ELECTRICAL ELEMENT, AT LEAST ONE SAID PASSIVE ELECTRICAL ELEMENT, AND AT LEST ON SAID CAPACITOR ELEMENT.
Claim 2
Dependent Claim
139 words
A SEMICONDUCTOR INTEGRATED CIRCUIT COMPRISING AT LEAST ONE ACTIVE ELECTRICAL ELEMENT, AT LEAST ONE PASSIVE ELECTRICAL ELEMENT, AND AT LEAST ONE TWO DIMENSIONAL THIN FILM CAPACITOR ELEMENT, SAID CAPACITOR ELEMENT COMPRISING A HIGH RESISTIVITY SEMICONDUCTOR WAFER SUBSTRATE, A SUBSTANTIALLY PLANAR THIN LAYER OF ALUMINUM VAPOR DEPOSIT ON SAID SUBSTRATE, A THIN DIELECTRIC LAYER SELECTED FROM THE GROUP CONSISTING OF TANTALUM OXIDE, SILICON OXIDE, TITANIUM OXIDE, A GLASSY INSULATING CERAMIC, CERIUM FLUORIDE BORON NITRIDE AND SILICON NITRIDE, A THIN MANGANESE DIOXIDE FILM HAVING A THICKNESS IN THE RANGE OF 500 TO 1500 A. OVERLYING SAID DIELECTRIC LAYER, ELECTRICAL CONDUCTING MEANS IN CONTACT WITH SAID THIN MANGANESE DIOXIDE FILM; AND ELECTRICAL CIRCUIT MEANS EXTENDING TO AND MAKING ELECTRICAL CONNECTION WITH AT LEAST ONE SAID ACTIVE ELECTRICAL ELEMENT, AT LEAST ONE SAID PASSIVE ELECTRICAL ELEMENT, AND AT LEST ON SAID CAPACITOR ELEMENT.
References Cited (Backward Citations)
US3093883A
Cited
US2643804A
Cited
US2759854A
Cited
US2913632A
Cited
US3036249A
Cited
US3054029A
Cited
US3115596A
Cited
US3173069A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1970-05-15 | 1970-11-14 | 1971-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1974-05-15 | 1974-11-14 | 1975-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1978-05-15 | 1978-11-14 | 1979-05-16 | $7700.00 | Window Closed / Lapsed |