Semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To obtain a large capacitance with a small area easily by a method wherein a capacitance element is composed of a conductor film formed on a substrate, a dielectric film covering the conductor film and a conductor film formed on the dielectric film, while said conductor film is composed of a multilayer structure consisting of at least three conductor layers. CONSTITUTION:An aluminum wiring 12 is provided as a third electrode and electrically connected to a first electrode 3 through a through-hole 11. Therefore, a capacitor composed of the first and third electrodes 3 and 12 and a second electrode 6 which are facing electrodes and oxide films 4 and 7 and nitride films 5 and 8 which are dielectric films. As a capacitor area is a summation of the areas of the first electrode 3 and the third electrode 12, the capacitor area twice the area occupied by a capacitance element can be obtained. With this constitution, a large capacitance can be obtained with a small area.

Inventors

• 👤 Osamu Nakauchi
• 👤 中内　修
• 👤 Tetsuya Okuzumi
• 👤 奥住　哲也

Bibliographic Details