Rf transistor package with nickel oxide barrier

Claim 1

A semiconductor device comprising in combination: a thermally and electrically conducting base member; a thermally conducting, electrically insulating support for a semiconductor die, said support having upper and lower surfaces, said lower surface coupled to said base member and said upper surface having a conductive coating thereon; a semiconductor die mounted on and electrically coupled to said upper surface of said support; a plurality of gold-plated leads mounted on said upper surface of said support and electrically connected to said semiconductor die, each of said leads having a nickel oxide barrier strip near the end of the lead proximate to the semiconductor die, said oxide barrier strip of a size and shape adapted to accept the leading edge of a protective cap; and a protective cap for the semiconductor die, said cap non-hermetically sealed by epoxy to the leads and the support at the nickel oxide barrier strip, said strip protecting said semiconductor die from contamination by solder.