Abstract Semiconductor devices, such as transistors or diodes, which dissipate appreciable heat, may be mounted on an insert having high thermal conductivity in a discrete component configuration. This insert of high thermal conductivity, such as beryllia, is embedded in a disc of copper or other material having a high thermal conductivity and good electrical conductivity. The disc, with the insert embedded therein, may then be mounted in a microwave circuit formed on a dielectric substrate. Strip line jumpers are bonded to the microwave circuit on the dielectric substrate and to the active elements of the semiconductor device formed on the insert. The disc is embedded in the substrate in a manner to be in electrical contact with a ground plane thereon so that the heat generated by the semiconductor device will be dissipated by the ground plane.
The microwave semiconductor structure of claim 1 wherein there is a first strip line and a second strip line secured to said substrate and at least one transistor secured to said at least one strip line, and wherein the base of the transistor is electrically coupled to said first strip line, the emitter of the transistor is electrically coupled to said body thereby providing an electrical connection to said ground plane, and the collector of the transistor is electrically coupled to said second strip line and thermally and electrically coupled to said at least one strip line on said insert whereby said collector is electrically insulated from but thermally connected to said ground plane.
Claim 2
Dependent Claim
152 words
A semiconductor structure comprising: a. a ground plane which serves as a heat sink for the dissipation of heat created by an active semiconductor device; b. a dielectric substrate secured to said ground plane, said dielectric substrate having an opening therein exposing said ground plane; c. an insert selectively located in said opening and secured to said ground plane and spaced from said substrate, said insert being thermally conductive and electrically insulative; d. metallization in at least one selective region between said insert and said substrate, said metallization electrically contacting said ground plane; e. at least one strip line secured to said substrate and to said insert, said strip line being selectively located to extend across a gap region where said substrate and said insert are spaced apart; and f. an active semiconductor device secured to said strip line, thereby providing a thermally condUctive and electrically insulative path to said ground plane.
Claim 3
Dependent Claim
76 words
The microwave semiconductor structure of claim 3 wherein there is a first strip line and a second strip line and said active semiconductor device is a transistor having a base electrically coupled to said first strip line, an emitter electrically coupled to said metallization thereby having electrical connection to said ground plane, and a collector electrically and thermally coupled to said second strip line thereby being thermally connected to and electrically insulated from said ground plane.