High frequency semiconductor device having improved metallized patterns

Claim 2

A SEMICONDUCTOR DEVICE COMPRISING: AN INSULTING MEMBER HAVING A FIRST CONDUCTIVE AREA ON A SURFADE THEREO, AND A SECOND CONDUCTIVE AREA ON SAID MEMBER IN GENERALLY SPACED APART, SURROUNDING RELATION WITH SAID FIRST CONDUCTIVE AREA, A SEMICONDUCTOR PELLET MOUNTED ON SAID FIRST AREA, AND SECOND CONDUCTIVE MEANS ELECTRICALLY CONNECTING PORTIONS OF SAID PELLET TO DIFFERENT PORTIONS OF SAID SECOND AREA, THE PATHS TOR CURRENT BETWEEN SAID DIFERENT PORTIONS THROUGH SAID SECOND AREA BEING OF SUBSTANTIALLY UNIFORM LENGTH BY VIRTUE OF THE SHORTEST PATHS FOR SAID CURRINT THROUGH SAID SECOND AREA BEING SUBSTANTIALLY LONGER THAN THE SHORTEST PATHS BETWEEN SAID DIFFERENT PORTIONS ALONG SURFACE OF SAID MEMBER NOT INTERSECTING SAID FIRST AREA.

Claim 3

A device as in claim 1 wherein said first area is mounted centrally of said surface, said different portions of said second area comprise segments extending towards one another and towards said first area from the periphery of said surface, and said current paths enter said segments only from the peripherally disposed portions thereof.

Claim 4

A semiconductor device as in claim 2 in which said second area includes an annular segment disposed along the periphery of said surface from which said segments extend, said annular segment providing the shortest current paths on said surface between said different portions.

Claim 5

A semiconductor device as in claim 3 in which the shortest distances between said pellet and the points of juncture of one of said extending segments with said annular segment are substantially greater than the length of said pellet.

Claim 6

A semiconductor device comprising: a first insulating member having first and second oppositely disposed surfaces, anD a second insulating member having third and fourth oppositely disposed surfaces, said members being in second to third surface containing relation, first and second spaced apart conductive areas on said first surface of said first member, third and fourth spaced apart conductive areas on said third surface of said second member, said fourth area including first and second portions in generally aligned relation with said first and second areas, respectively, on said first surface, and spaced from said third conductive area by preselected spacings, a gap in said fourth area resulting in the shortest paths for current between said first and second portions through said fourth conductive area being substantially longer than the shortest paths therebetween on said third surface which do not intersect said first area.

Claim 7

A semiconductor device comprising: a first insulating member having first and second oppositely disposed surfaces, anD a second insulating member having third and fourth oppositely disposed surfaces, said members being in second to third surface containing relation, first and second spaced apart conductive areas on said first surface of said first member, third and fourth spaced apart conductive areas on said third surface of said second member, said fourth area including first and second portions in generally aligned relation with said first and second areas, respectively, on said first surface, and spaced from said third conductive area by preselected spacings, a gap in said fourth area resulting in the shortest paths for current between said first and second portions through said fourth conductive area being substantially longer than the shortest paths therebetween on said third surface which do not intersect said first area.

Claim 8

A semiconductor device as in claim 5 wherein said fourth area includes an annular segment disposed along the periphery of said third surface, said two portions of said fourth area being in the form of elongated segments extending inwardly from said annular segment towards said third conductive area.

Claim 9

A semiconductor device as in claim 6 wherein one of said portions of said fourth conductive area is of less width than the corresponding aligned one of said first and second conductive areas on said first surface.

Claim 10

A semiconductor device as in claim 7 including a fifth conductive area on said second surface of said first member aligned with said fourth conductive area on said third surface and including an annular segment and two elongated segments, said elongated segments on said second surface being of the same width as the corresponding elongated segments on said third surface.

Claim 11

A semiconductor device as in claim 5 wherein one of said portions of said fourth conductive area is of less width than the corresponding aligned one of said first and second conductive areas on said first surface.

Claim 12

A semiconductor device comprising: a first insulating member having first and second oppositely disposed surfaces, and a second insulating member having third and fourth oppositely disposed surfaces, said members being in second to third surface contacting relation, first and second spaced apart conductive areas on said first surface of said first member, third and fourth spaced apart conductive areas on said third surface of said second member, said fourth area including first and second portions in generally aligned relation with said first and second areas, respectively, on said first surface, one of said first and second portions being of less width than the corresponding aligned one of said first and second areas.

Claim 13

A semiconductor device comprising: a first insulating member having first and second oppositely disposed surfaces, and a second insulating member having third and fourth oppositely disposed surfaces, said members being in second to third surface contacting relation, first and second spaced apart conductive areas on said first surface of said first member, third and fourth spaced apart conductive areas on said third surface of said second member, said fourth area including first and second portions in generally aligned relation with said first and second areas, respectively, on said first surface, one of said first and second portions being of less width than the corresponding aligned one of said first and second areas.