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Semiconductor light emitting device and method of fabricating the same

Assignee: Toshiba Corp
•
Filing: 1990-09-27
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Granted: 1992-04-07
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Expires: 2010-09-27
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Abstract

Abstract A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In x Ga y Al l-x-y P (0≦x, y≦l) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga l-w Al w As (0≦w≦l) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer even though its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.

Inventors

  • 👤 Toshihide Izumiya
  • 👤 Yasuo Ohba
  • 👤 Ako Hatano

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 13:49
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/01; H10H20/011; H10H20/013

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 105 words
A semiconductor light-emitting device, comprising: a light-emitting layer including a pn junction formed by a plurality of In x Ga y Al 1-x-y P (0≦x, y≦1) layers, wherein each of the plurality of In x Ga y Al 1-x-y P layers has a corresponding band gap; and a light-emitting-layer holding layer consisting of an indirect transition type Ga 1-w Al w As (0<w≦1) having a band gap which is smaller than any of the corresponding band gaps of the In x Ga y Al 1-x-y P layers of the light-emitting layer, and provided on an opposite side to a light-outputting side of said light-emitting layer.
Claim 2
Dependent Claim 105 words
A semiconductor light-emitting device, comprising: a light-emitting layer including a pn junction formed by a plurality of In x Ga y Al 1-x-y P (0≦x, y≦1) layers, wherein each of the plurality of In x Ga y Al 1-x-y P layers has a corresponding band gap; and a light-emitting-layer holding layer consisting of an indirect transition type Ga 1-w Al w As (0<w≦1) having a band gap which is smaller than any of the corresponding band gaps of the In x Ga y Al 1-x-y P layers of the light-emitting layer, and provided on an opposite side to a light-outputting side of said light-emitting layer.
Claim 3
Dependent Claim 17 words
The semiconductor light-emitting device according to claim 1, wherein said light-emitting layer has a double heterojunction structure.
Claim 4
Dependent Claim 17 words
The semiconductor light-emitting device according to claim 1, wherein said light-emitting layer has a single heterojunction structure.
Claim 5
Dependent Claim 77 words
The semiconductor light-emitting device according to claim 1, which further comprises: an intermediate layer between said light-emitting layer and said light-emitting-layer holding layer which has an intermediate band gap which is between the band gap of said light-emitting-layer holding layer and the corresponding band gaps of the In x Ga y Al 1-x-y P layers of said light-emitting layer, thereby providing for a smooth transition of band gap between said light-emitting layer and said light-emitting-layer holding layer.
Claim 6
Dependent Claim 32 words
The semiconductor light-emitting device according to claim 1, wherein a contact layer transparent at the wavelength of emitted light is provided between said light-emitting layer and an electrode on said light-outputting side.

References Cited (Backward Citations)

JPS63164374A Cited
JPS63236385A Cited
EP0322465A1 Cited
EP0317228A2 Cited
EP0328134A2 Cited
EP0330152A2 Cited
US5008718A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-04-07 1995-10-07 1996-04-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-04-07 1999-10-07 2000-04-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-04-07 2003-10-07 2004-04-07 $7700.00 Window Closed / Lapsed

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