semiconductor light emitting device

Abstract

Abstract PURPOSE:To improve an InGaAlP/GaAs series semiconductor light emitting element in performance by a method wherein Ga1-xAlxAs, which can be used with a substrate common to InGaAlP/GaAs series, is used independently or in combination with In0.5(Ga1-xAlx) 0.5P. CONSTITUTION:An n-GaAs buffer layer 2, an n-AlAs first clad layer 3, an n-In0.5(Ga0.55Al0.44)0.5P second clad layer 4, a non-doped In0.48Ga0.52P active layer 5, a p-In0.5(Ga0.56Al0.44)0.5P second clad layer 6, a p-AlAs second layer 7, and a p-GaAs gap layer 8 are successively laminated on an n-GaAs substrate 1, and electrodes 9 and 10 are formed on the surface and the rear thereof. By these processes, carriers and light rays can be trapped in the active layer between the second clad layers 4 and 6, and between the first clad layers 3 and 7 respectively, wherefore a visible semiconductor laser with a high output can be obtained.

Inventors

• 👤 Masahiko Kondo
• 👤 正彦 近藤
• 👤 Shigekazu Minagawa
• 👤 皆川　重量
• 👤 Makoto Sato
• 👤 信 佐藤
• 👤 Kenji Uchida
• 👤 内田　憲治
• 👤 Shinichi Nakatsuka
• 👤 慎一 中塚

Bibliographic Details