Visible light semiconductor laser element and manufacture thereof

Abstract

Abstract PURPOSE:To establish long-life operating characteristics by constituting an active layer or a light guide layer formed on a GaAlAs layer with particular crystals of five elements mixed crystal and producing the laser element with the superior quality crystals of InGaAlAsP. CONSTITUTION:When an active layer is caused to epitaxially grow on a GaAlAs clad layer, crystals of five mixed elements consisting of In, Ga, Al, As and P are used for the active layer. On a (100) P-GaAs substrate 1, an N-GaAs current entrapping layer 2 is caused to grow and thereafter stripe grooves are formed by chemical etching with use of photo-lithography. These stripe grooves serve as current paths from which the current entrapping layer 2 has been removed. Then, a P-Ga0.2Al0.8As clad layer 3, non-doped In0.28(Ga0.62Al0.38)0.72As0.45 P0.55 active layer 4, an N-Ga0.2Al0.8As clad layer 5 and an N-GaAs cap layer 6 are caused to grow subsequently by the liquid phase epitaxial growth. Au-Ge-Ni and Au-Zn are then vapor deposited as an N-side electrode 7 and a P-side electrode 8, respectively, and heated to form the same. In such a manner, a semiconductor laser element of double heterojunction type is produced.

Inventors

• 👤 Toshiro Hayakawa
• 👤 利郎 早川
• 👤 Shinji Kaneiwa
• 👤 進治 兼岩
• 👤 Saburo Yamamoto
• 👤 三郎 山本
• 👤 Morichika Yano
• 👤 矢野　盛規

Bibliographic Details