EP0330152A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semicondustor light emitting device
Assignee: Sukegawa Tokuzo
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Filing: 1989-02-21
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Granted: —
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Expires: 2009-02-21
Abstract
Abstract The semiconductor light emitting device is a light emitting diode (LED) or laser diode (LD) composed of a substrate composed of III-V group elements and GaInP system mixed crystal of III-V group mixed crystal, which comprises a III-V group substrate, a first layer mainly composed of GaInP being formed on this III-V group substrate by the yo-yo solute feeding method or Sn solvent method, and a second layer mainly composed of GaInP being formed on the first layer by a method selected from MOVPE, MBE and LPE, thereby obtaining short wavelength emission in green to yellow color.
Inventors
- 👤 Tokuzo Sukegawa
- 👤 Kazuyuki Tadatomo
- 👤 Akira Ito
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 13:49
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; H10H20/01; H10H20/011; H10H20/013; H01S5/305; H01S5/3201; H01S5/3202; H01S5/32333
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
58 words
A semiconductor light emitting device comprising a substrate composed of III-V group elements, a first layer mainly composed of GaInP formed on the III-V group substrate by the yo-yo solute feeding method or Sn solvent method, and a second layer mainly composed of GaInP formed on the first layer by a method selected from MOVPE, MBE and LPE.
Claim 2
Dependent Claim
58 words
A semiconductor light emitting device comprising a substrate composed of III-V group elements, a first layer mainly composed of GaInP formed on the III-V group substrate by the yo-yo solute feeding method or Sn solvent method, and a second layer mainly composed of GaInP formed on the first layer by a method selected from MOVPE, MBE and LPE.
Claim 3
Dependent Claim
65 words
A semiconductor light emitting device according to claim 1, wherein the III-V group substrate is composed of GaP, the first layer is composed of GaInP formed by the yo-yo solute feeding method, and the second layer is composed of an AlGaInP cladding layer, a GaInP with or without active layer Al or GaInPAs active layer, and an AlGaInP cladding layer, in a double hetero structure.
Claim 4
Dependent Claim
61 words
A semiconductor light emitting device according to claim 1, wherein the III-V group substrate is composed of GaP, the first layer is composed of GaInP formed by the yo-yo solute feeding method, and the second layer is composed of a GaInP active layer with or without Al or GaInPAs active layer, and an AlGaInP cladding layer, in a single hetero structure.
Claim 5
Dependent Claim
66 words
A semiconductor light emitting device according to claim 1, wherein the III-V group substrate is composed of GaAs, the first layer is composed of an Sn-doped GaInP formed by the Sn solvent method, and the second layer is composed of an AlGaInP cladding layer, a GaInP active layer with or without Al or GaInPAs active layer, and an AlGaInP cladding layer, in a double hetero structure.
Claim 6
Dependent Claim
62 words
A semiconductor light emitting device according to claim 1, wherein the III-V group substrate is composed of GaAs, the first layer is composed of an Sn-doped GaInP formed by the Sn solvent method, and the second layer is composed of a GaInP active layer with or without Al or GaInPAs active layer, and an AlGaInP cladding layer, in a single hetero structure.
Claim 7
Dependent Claim
25 words
A semiconductor light emitting device according to claim 1, wherein the yo-yo solute feeding method is used as the LPE for forming the second layer.
References Cited (Backward Citations)
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