Patent US5093693A successfully refreshed from Google Patents.
US5093693A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pn-junction with guard ring
Assignee: BBC Brown Boveri AG Switzerland
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Filing: 1991-01-28
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Granted: 1992-03-03
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Expires: 2011-01-28
Abstract
Abstract In a semiconductor component, a pn junction which emerges at a main surface (2) of a semiconductor substrate (1) at the edge of a highly doped zone (3) is formed by a laterally bounded, highly doped zone (3) extending inwards from a main surface (2) of the semiconductor substrate (1) and by a lightly doped zone surrounding the highly doped zone. The edge of the highly doped zone (3) is formed by a guard zone (6b) whose doping density gradually decreases in a direction parallel to the main surface (2) from the highly doped zone (3) towards the pn junction. Any surface breakdown of the pn junction is prevented by the fact that the guard zone (6b) has a maximum penetration depth near the highly doped zone (3) and that the maximum penetration depth of the guard zone (6b) is greater than the penetration depth of the adjacent highly doped zone (3). The guard zone (6b) has a maximum doping density which does not appreciably exceed 10 15 cm -3 , a width which is comparable with a thickness of the slightly doped zone and a maximum penetration depth which is between 40 μm and 80 μm. The doping density of the guard zone (6b) decreases approximately linearly or stepwise in a direction parallel to the main surface (2).
Inventors
- 👤 Christian C. Abbas
- 👤 Peter Roggwiller
- 👤 Jan Voboril
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:01
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D8/00; H10D8/411; H10D62/106; H10P; H10P30/00; H10P30/20; H10P30/22
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
226 words
A semiconductor element, comprising: a semiconductor substrate containing at least a first high reverse blocking pn junction, said first pn junction being formed at a boundary of a heavily doped zone of a first conductivity type and a lightly doped zone of a second conductivity type; wherein: the heavily doped zone extends from a main surface of said semiconductor substrate inwards into the semiconductor substrate and is surrounded by the lightly doped zone; further comprising: a guard zone adjoining the heavily doped zone and forming a second pn junction at a boundary of said guard zone and the lightly doped zone, said second pn junction terminating at said main surface; wherein: a doping density of the guard zone decreases in a direction parallel to the main surface from the heavily doped zone towards the second pn junction; the guard zone has a maximum depth of penetration near the heavily doped zone; the maximum depth of penetration of the guard zone is greater than a depth of penetration of the heavily doped zone; the guard zone has a maximum doping density less than 10 15 cm -3 ; the guard zone has a width which is comparable with a thickness of the lightly doped zone; and the maximum depth of penetration of the guard zone is not less than 40 μm and not more than 80 μm.
Claim 2
Dependent Claim
226 words
A semiconductor element, comprising: a semiconductor substrate containing at least a first high reverse blocking pn junction, said first pn junction being formed at a boundary of a heavily doped zone of a first conductivity type and a lightly doped zone of a second conductivity type; wherein: the heavily doped zone extends from a main surface of said semiconductor substrate inwards into the semiconductor substrate and is surrounded by the lightly doped zone; further comprising: a guard zone adjoining the heavily doped zone and forming a second pn junction at a boundary of said guard zone and the lightly doped zone, said second pn junction terminating at said main surface; wherein: a doping density of the guard zone decreases in a direction parallel to the main surface from the heavily doped zone towards the second pn junction; the guard zone has a maximum depth of penetration near the heavily doped zone; the maximum depth of penetration of the guard zone is greater than a depth of penetration of the heavily doped zone; the guard zone has a maximum doping density less than 10 15 cm -3 ; the guard zone has a width which is comparable with a thickness of the lightly doped zone; and the maximum depth of penetration of the guard zone is not less than 40 μm and not more than 80 μm.
Claim 3
Dependent Claim
39 words
Semiconductor element according to claim 1, wherein the doping density of the heavily doped zone has a concentration less than 10 18 cm -3 and decreases sharply from said concentration to a maximum doping density of the guard zone.
Claim 4
Dependent Claim
38 words
Semiconductor element according to claim 1, wherein the doping density of the guard zone decreases in at least two steps and a first step extends into said semiconductor substrate about twice as deep as the heavily doped zone.
Claim 5
Dependent Claim
42 words
Semiconductor element according to claim 3, wherein the doping density of the guard zone decreases in precisely two steps and the doping density of a second step of the two steps is about half as great as that of a first step.
Claim 6
Dependent Claim
25 words
Semiconductor element according to claim 1, wherein the doping density of the guard zone decreases approximately linearly in the direction parallel to the main surface.
Claim 7
Dependent Claim
232 words
A semiconductor structure with a pn junction for use in a thyristor, comprising: a semiconductor substrate containing at least a first high reverse blocking pn junction, said first pn junction being formed between a boundary of a heavily doped zone of a first conductivity type and a lightly doped zone of a second conductivity type; wherein: the heavily doped zone extends from a main surface of said substrate inwards into the semiconductor substrate and is surrounded by the lightly doped zone; further comprising: a guard zone adjoining the heavily doped zone and forming a second pn junction at a boundary of said guard zone and the lightly doped zone, said second pn junction terminating at said main surface; wherein: a doping density of the guard zone decreases in a direction parallel to the main surface from the heavily doped zone towards the second pn junction; the guard zone has a maximum penetration depth near the heavily doped zone; the maximum depth of penetration of the guard is greater than a depth of penetration of the heavily doped zone; the guard zone has a maximum doping density less than 10 15 cm -3 ; the guard zone has a width which is comparable with a thickness of the lightly doped zone; and the maximum depth of penetration of the guard zone is not less than 40 μm and not more than 80 μm.
Claim 8
Dependent Claim
232 words
A semiconductor structure with a pn junction for use in a thyristor, comprising: a semiconductor substrate containing at least a first high reverse blocking pn junction, said first pn junction being formed between a boundary of a heavily doped zone of a first conductivity type and a lightly doped zone of a second conductivity type; wherein: the heavily doped zone extends from a main surface of said substrate inwards into the semiconductor substrate and is surrounded by the lightly doped zone; further comprising: a guard zone adjoining the heavily doped zone and forming a second pn junction at a boundary of said guard zone and the lightly doped zone, said second pn junction terminating at said main surface; wherein: a doping density of the guard zone decreases in a direction parallel to the main surface from the heavily doped zone towards the second pn junction; the guard zone has a maximum penetration depth near the heavily doped zone; the maximum depth of penetration of the guard is greater than a depth of penetration of the heavily doped zone; the guard zone has a maximum doping density less than 10 15 cm -3 ; the guard zone has a width which is comparable with a thickness of the lightly doped zone; and the maximum depth of penetration of the guard zone is not less than 40 μm and not more than 80 μm.
Claim 9
Dependent Claim
187 words
A semiconductor element comprising: a semiconductor substrate having a main surface; a first zone of a first conductivity type and first doping density extending from said main surface inwards into said semiconductor substrate; a second zone of a second conductivity type, predetermined thickness, and second doping density surrounding said first zone, wherein said first doping density is higher than said second doping density; a first pn junction formed between said first and second zones; a guard zone formed to adjoin said first zone and forming a second pn junction between said guard zone and said second zone, said guard zone having a predetermined doping density less then 1.10 15 cm -3 , a maximum depth of penetration and width; said doping density of said guard zone decreasing in a direction parallel to said main surface from said first zone towards said second pn junction; said maximum depth of penetration of said guard zone appearing near said first zone and being greater than a depth of penetration of the first zone; and said width of said guard zone being comparable to the predetermined thickness of the second zone.
Claim 10
Dependent Claim
187 words
A semiconductor element comprising: a semiconductor substrate having a main surface; a first zone of a first conductivity type and first doping density extending from said main surface inwards into said semiconductor substrate; a second zone of a second conductivity type, predetermined thickness, and second doping density surrounding said first zone, wherein said first doping density is higher than said second doping density; a first pn junction formed between said first and second zones; a guard zone formed to adjoin said first zone and forming a second pn junction between said guard zone and said second zone, said guard zone having a predetermined doping density less then 1.10 15 cm -3 , a maximum depth of penetration and width; said doping density of said guard zone decreasing in a direction parallel to said main surface from said first zone towards said second pn junction; said maximum depth of penetration of said guard zone appearing near said first zone and being greater than a depth of penetration of the first zone; and said width of said guard zone being comparable to the predetermined thickness of the second zone.
Claim 11
Dependent Claim
229 words
A semiconductor element comprising: a semiconductor substrate having a main surface; a first zone of a first conductivity type and first doping density extending from said main surface inwards into said semiconductor substrate; a second zone of a second conductivity type, predetermined thickness, and second doping density surrounding said first zone, wherein said first doping density is higher than said second doping density; a first pn junction formed between said first and second zones; a guard zone formed to adjoin said first zone and forming a second pn junction between said guard zone and said second zone, said guard zone having a predetermined doping density, maximum depth of penetration and width; said doping density of said guard zone decreasing in a direction parallel to said main surface from said first zone towards said second pn junction wherein the doping density of the guard zone decreases in precisely two steps with a first step extending inwards about twice as deep as the first zone and the doping density of a second step of the two steps is about half as great as that of a first step; said maximum depth of penetration of said guard zone appearing near said first zone and being greater than a depth of penetration of the first zone; and said width of said guard zone being comparable to the predetermined thickness of the second zone.
Claim 12
Dependent Claim
229 words
A semiconductor element comprising: a semiconductor substrate having a main surface; a first zone of a first conductivity type and first doping density extending from said main surface inwards into said semiconductor substrate; a second zone of a second conductivity type, predetermined thickness, and second doping density surrounding said first zone, wherein said first doping density is higher than said second doping density; a first pn junction formed between said first and second zones; a guard zone formed to adjoin said first zone and forming a second pn junction between said guard zone and said second zone, said guard zone having a predetermined doping density, maximum depth of penetration and width; said doping density of said guard zone decreasing in a direction parallel to said main surface from said first zone towards said second pn junction wherein the doping density of the guard zone decreases in precisely two steps with a first step extending inwards about twice as deep as the first zone and the doping density of a second step of the two steps is about half as great as that of a first step; said maximum depth of penetration of said guard zone appearing near said first zone and being greater than a depth of penetration of the first zone; and said width of said guard zone being comparable to the predetermined thickness of the second zone.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-03 | 1995-09-02 | 1996-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-03 | 1999-09-02 | 2000-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-03 | 2003-09-02 | 2004-03-03 | $7700.00 | Window Closed / Lapsed |