US4805004A
Expired / Lapsed
US
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Semiconductor device with a planar junction and self-passivating termination
Assignee: STMicroelectronics SRL
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Filing: 1986-12-11
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Granted: 1989-02-14
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Expires: 2006-12-11
Abstract
Abstract A semiconductor device with a planar junction and self-passivating termination includes: a silicon substrate of one type of conductivity; an epitaxial layer of a second type of conductivity which is opposite to the first type of conductivity, lying on the substrate, so as to form with it a planar PN junction; a first region, of the first type of conductivity, that delimits, in its interior, an active portion of the device and extends transversely, from the surface of the epitaxial layer to the substrate with a portion having a high concentration of impurities and, on the surface, in the epitaxial layer, with a portion having a low concentration of impurities; and another region immersed in the epitaxial layer and of the same type of conductivity, but with a higher concentration of impurities. The latter region and the top portion of the first region extend toward each other with progressively decreasing concentrations of impurities. The first region may consist of a thin surface zone diffused on the walls and on the bottom of a deep groove of the type normally made in mesa devices. However, unlike mesa devices of the prior art the device according to the present invention does not require a thick layer of dielectric material in contact with the junction and its electrical properties are therefore improved and more reliable.
Inventors
- 👤 Luciano Gandolfi
- 👤 Salvatore Musumeci
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 13:29
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/104; H10D10/00; H10D10/40; H10D10/441; H10D62/105; H10D62/13; H10D62/137
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
287 words
A semiconductor device comprising: a substrate of monocrystalline semiconductor material of a first type of conductivity; a semiconductor layer of a second type of conductivity which is opposite to that of said first type of conductivity, located on the substrate in such a way as to form a planar PN junction therewith; a layer of insulating material which at least partially covers a surface of said semiconductor layer opposite said PN junction; a first and a second conducting means for respectively making ohmic contacts with said substrate and said semiconductor layer, wherein said device comprises a first region of said first type of conductivity which delimits an active part of said device and extends from said surface across the entire semiconductor layer and part of said substrate in such a way as to intersect said PN planar junction; and wherein said device has a second and a third region in said active part which extend on said surface and are parallel to said substrate with a concentration of impurities everywhere larger than that of said semiconductor layer, said second region of said first type of conductivity extending from said first region to an interior of said active part with a concentration of impurities that decreases to an edge remote from said first region with a first predetermined profile and said third region of said second type of conductivity extending from a P side of said PN junction to said interior of said active part with a concentration of impurities that decreases to said edge with a second predetermined profile; and wherein ohmic contact of said second conducting means with said semiconductor layer is located on a zone of said third region having a higher concentration of impurities.
Claim 2
Dependent Claim
287 words
A semiconductor device comprising: a substrate of monocrystalline semiconductor material of a first type of conductivity; a semiconductor layer of a second type of conductivity which is opposite to that of said first type of conductivity, located on the substrate in such a way as to form a planar PN junction therewith; a layer of insulating material which at least partially covers a surface of said semiconductor layer opposite said PN junction; a first and a second conducting means for respectively making ohmic contacts with said substrate and said semiconductor layer, wherein said device comprises a first region of said first type of conductivity which delimits an active part of said device and extends from said surface across the entire semiconductor layer and part of said substrate in such a way as to intersect said PN planar junction; and wherein said device has a second and a third region in said active part which extend on said surface and are parallel to said substrate with a concentration of impurities everywhere larger than that of said semiconductor layer, said second region of said first type of conductivity extending from said first region to an interior of said active part with a concentration of impurities that decreases to an edge remote from said first region with a first predetermined profile and said third region of said second type of conductivity extending from a P side of said PN junction to said interior of said active part with a concentration of impurities that decreases to said edge with a second predetermined profile; and wherein ohmic contact of said second conducting means with said semiconductor layer is located on a zone of said third region having a higher concentration of impurities.
Claim 3
Dependent Claim
17 words
A device as set forth in claim 1, wherein said first predetermined profile is a continuous curve.
Claim 4
Dependent Claim
17 words
A device as set forth in claim 1, wherein said second predetermined profile is a continuous curve.
Claim 5
Dependent Claim
17 words
A device as set forth in claim 1, wherein said first predetermined profile is a steplike curve.
Claim 6
Dependent Claim
17 words
A device as set forth in claim 1, wherein said second predetermined profile is a steplike curve.
Claim 7
Dependent Claim
37 words
A device as set forth in claim 1, wherein said first region is delimited by a surface coplanar with said surface of said semiconductor layer and wherein said layer of insulating material extends above said coplanar surface.
Claim 8
Dependent Claim
35 words
A device as set forth in claim 1, wherein said first region is delimited by a groove and wherein said layer of insulating material extends even on walls and on a bottom of said groove.
Claim 9
Dependent Claim
22 words
A device as set forth in claim 1, further comprising a third conducting means which makes ohmic contact with said first region.
Claim 10
Dependent Claim
22 words
A device as set forth in claim 6, further comprising a third conducting means which makes ohmic contact with said first region.
Claim 11
Dependent Claim
22 words
A device as set forth in claim 7, further comprising a third conducting means which makes ohmic contact with said first region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-02-14 | 1992-08-15 | 1993-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-02-14 | 1996-08-15 | 1997-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-02-14 | 2000-08-15 | 2001-02-14 | $7700.00 | Window Closed / Lapsed |