US5079187A — Method for processing semiconductor materials

Claim 1

Independent Claim 278 words

A process for treating the surface of a semiconductor material to vary its conductivity properties, comprising: using plasma pinch means for establishing an incoherent ultraviolet light of sufficient high intensity to cause the conductivity properties of substantially the entire planar surface of the semiconductor material to be varied uniformly, said establishing including using a pair of spaced apart combination liquid emitter and electrode means, and combination liquid receptor and electrode means; flowing between said pair of electrode means a fine stream of liquid under sufficient pressure in a substantially narrow, straight and focused configuration, to cause the formation thereabout of a tenuous liquid vapor preconditioning cloud surrounding the flowing fine stream of liquid under pressure; establishing an electrical voltage potential difference between said electrode means of a sufficiently high voltage to cause electrical current to flow through said liquid vapor cloud for establishing initially a low density plasma therealong sufficient to emanate energy therefrom to said flowing liquid stream to heat it sufficiently to cause it to become ionized and to be converted into a high density plasma in response to said low density plasma to generate high intensity incoherent ultraviolet light; directing said ultraviolet light toward the entire surface of the semiconductor material in a substantially uniform distribution thereover for heating the entire surface thereof; maintaining the directed ultraviolet light stationary; pulsating said ultraviolet light repetitively at a rate of at least once per second to cause the conductivity properties of the entire semiconductor material to be varied in response thereto in less than about one second in a substantially uniform manner; and terminating said heating of the treated semiconductor surface in less than about one second.

Claim 2

Dependent Claim 278 words

A process for treating the surface of a semiconductor material to vary its conductivity properties, comprising: using plasma pinch means for establishing an incoherent ultraviolet light of sufficient high intensity to cause the conductivity properties of substantially the entire planar surface of the semiconductor material to be varied uniformly, said establishing including using a pair of spaced apart combination liquid emitter and electrode means, and combination liquid receptor and electrode means; flowing between said pair of electrode means a fine stream of liquid under sufficient pressure in a substantially narrow, straight and focused configuration, to cause the formation thereabout of a tenuous liquid vapor preconditioning cloud surrounding the flowing fine stream of liquid under pressure; establishing an electrical voltage potential difference between said electrode means of a sufficiently high voltage to cause electrical current to flow through said liquid vapor cloud for establishing initially a low density plasma therealong sufficient to emanate energy therefrom to said flowing liquid stream to heat it sufficiently to cause it to become ionized and to be converted into a high density plasma in response to said low density plasma to generate high intensity incoherent ultraviolet light; directing said ultraviolet light toward the entire surface of the semiconductor material in a substantially uniform distribution thereover for heating the entire surface thereof; maintaining the directed ultraviolet light stationary; pulsating said ultraviolet light repetitively at a rate of at least once per second to cause the conductivity properties of the entire semiconductor material to be varied in response thereto in less than about one second in a substantially uniform manner; and terminating said heating of the treated semiconductor surface in less than about one second.

Claim 3

Dependent Claim 19 words

A process as recited in claim 1 wherein the semiconductor material is a semiconductor material having an implanted dopant.

Claim 4

Dependent Claim 38 words

A process as recited in claim 2 wherein the surface of said semiconductor is heated sufficiently to cause the activation of the implanted dopant to form a semiconductor having a shallow junction of substantially less than 0.1 mm.

Claim 5

Dependent Claim 48 words

A process as recited in claim 3 further comprising: using temperature measuring means; measuring continuously the surface temperature of the semiconductor material as it is exposed to said pulsating ultraviolet light; and terminating said heating of the treated semiconductor surface when the surface area has been completely covered.

Claim 6

Dependent Claim 38 words

A process as recited in claim 4 wherein the heating of the surface of the treated semiconductor material is terminated when the surface temperature of the semiconductor is heated to a temperature of 800° C. to 1200° C.

Claim 7

Dependent Claim 35 words

A process as recited in claim 5 wherein the heating of the surface of the treated semiconductor material is terminated when the surface temperature of the semiconductor is heated to a temperature of 1050° C.

Claim 8

Dependent Claim 28 words

A process as recited in claim 6 wherein the said ultraviolet light is pulsated at a rate between substantially once per second and substantially 1000 times per second.

Claim 9

Dependent Claim 27 words

A process as recited in claim 7 wherein said ultraviolet light is pulsated at a rate between substantially once per second and substantially 10 times per second.

Claim 10

Dependent Claim 77 words

A process as recited in claim 1 further comprising: Using an etching mask having predetermined pattern openings so that light may pass therethrough; interposing said mask between said light and said semiconductor material; directing said ultraviolet light toward the surface of said mask to heat the surface of said semiconductor sufficiently to cause the said surface to be etched with the predetermined pattern of light passing through said etching mask and onto the surface of said semiconductor.

Claim 11

Dependent Claim 166 words

In a process for manufacturing a semiconductor chip from semiconductor wafers, a method comprising: using a pair of spaced apart combination liquid emitter and electrode means, and combination liquid receptor and electrode means; flowing between said pair of electrode means a fine stream of liquid under sufficient pressure in a substantially narrow, straight and focused configuration, to cause the formation thereabout of a tenuous liquid vapor preconditioning cloud surrounding the flowing fine stream of liquid under pressure; establishing an electrical voltage potential difference between said electrode means of a sufficiently high voltage to cause electrical current to flow through said liquid vapor cloud for establishing initially a low density plasma therealong sufficient to emanate energy therefrom to said flowing liquid stream to heat it sufficiently to cause it to become ionized and to be converted into a high density plasma in response to said low density plasma to generate high intensity incoherent ultraviolet light; and exposing a semiconductor wafer to said high intensity incoherent ultraviolet light.

Claim 12

Dependent Claim 166 words

In a process for manufacturing a semiconductor chip from semiconductor wafers, a method comprising: using a pair of spaced apart combination liquid emitter and electrode means, and combination liquid receptor and electrode means; flowing between said pair of electrode means a fine stream of liquid under sufficient pressure in a substantially narrow, straight and focused configuration, to cause the formation thereabout of a tenuous liquid vapor preconditioning cloud surrounding the flowing fine stream of liquid under pressure; establishing an electrical voltage potential difference between said electrode means of a sufficiently high voltage to cause electrical current to flow through said liquid vapor cloud for establishing initially a low density plasma therealong sufficient to emanate energy therefrom to said flowing liquid stream to heat it sufficiently to cause it to become ionized and to be converted into a high density plasma in response to said low density plasma to generate high intensity incoherent ultraviolet light; and exposing a semiconductor wafer to said high intensity incoherent ultraviolet light.

Claim 13

Dependent Claim 19 words

A method according to claim 10, further including charging capacitor means for discharging it to supply said current flow.

Claim 14

Dependent Claim 19 words

A method according to claim 10, wherein said fluid is selected from the group of water, decane and pentane.

Claim 15

Dependent Claim 102 words

In a process for manufacturing a semiconductor chip from semiconductor wafers, a method comprising: establishing a plasma source including a tenuous vapor preconditioning cloud surrounding a fine stream of fluid under pressure; supplying an electrical current flow to said vapor cloud for establishing a low density plasma therealong; converting said stream of fluid into a high density plasma in response to said low density plasma to generate incoherent light; exposing a semiconductor wafer to said incoherent light; charging and discharging a capacitor means for pulsating said current flow; wherein said fluid is selected form the group consisting of water, decane and pentane.

Claim 16

Dependent Claim 102 words

In a process for manufacturing a semiconductor chip from semiconductor wafers, a method comprising: establishing a plasma source including a tenuous vapor preconditioning cloud surrounding a fine stream of fluid under pressure; supplying an electrical current flow to said vapor cloud for establishing a low density plasma therealong; converting said stream of fluid into a high density plasma in response to said low density plasma to generate incoherent light; exposing a semiconductor wafer to said incoherent light; charging and discharging a capacitor means for pulsating said current flow; wherein said fluid is selected form the group consisting of water, decane and pentane.

Claim 17

Dependent Claim 22 words

A method according to claim 13, wherein said exposing includes interposing a mask between said plasma and the wafer for etching purposes.

Claim 18

Dependent Claim 23 words

A method according to claim 10, wherein said exposing of the wafer includes transporting a series of similar wafers relative to the plasma.

Claim 19

Dependent Claim 28 words

A method according to claim 13, wherein said exposing the wafer to said incoherent light includes exposing the wafer for sufficient peak pulse power to anneal the wafer.

Claim 20

Dependent Claim 28 words

A method according to claim 13, further including: using a vacuum chamber; and directing the fine stream of fluid under pressure through the interior of the vacuum chamber.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1995-01-06	1995-07-08	1996-01-07	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1999-01-06	1999-07-08	2000-01-07	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2003-01-06	2003-07-08	2004-01-07	$7700.00	Window Closed / Lapsed

Method for processing semiconductor materials

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