US4454835A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Internal photolysis reactor
Assignee: United States Department of the Navy
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Filing: 1982-09-13
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Granted: 1984-06-19
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Expires: 2002-09-13
Abstract
Abstract A method and apparatus which permits photolysis of compounds without use of windows to permit unlimited growth of epitaxial layers. Epitaxial layers can include growth of crystals such as iron. A two section reactor chamber with a common opening between the sections is used for the internal production of high energy ultraviolet light to carry out the photolysis. The first section of the reactor chamber containing the substrate to be coated is connected to a source of molecular compound vapor capable of undergoing a photolytic change. A feed system provides a rare gas flow through the second section at low pressure past an electrode discharge system to produce ultraviolet light. The ultraviolet light passes through the opening between the sections and interacts with the molecular compound causing photolytic decomposition of the molecular compound and deposition of the desired epitaxial layer on the substrate. Upon exiting the reactor chamber, the molecular compound used for the photolysis is recaptured via a cold trap while a residual gas analyzer permits the exhaust cycle in the reactor chamber to either be vented or recycled depending on the level of purity of the rare gas.
Inventors
- 👤 Peter J. Walsh
- 👤 Nicholas Bottka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:03
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/105; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/482
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
161 words
An apparatus for growing epitaxial layers by photolysis comprising: a reactor chamber divided into two sections, said sections having a common opening between them; a sample holder in the first of said two sections for holding a given substrate on which an epitaxial layer is to be grown; an electrode discharge system in said second section of said reactor chamber for producing predetermined voltage potential; means for supplying a rare gas to said second section of the reactor chamber, said rare gas emitting light of a desired spectrum range due to electrical discharge of said voltage potential through said rare gas; means for supplying a molecular compound vapor to said first section of the reactor chamber for coating said substrate on said sample holder with a given molecular compound that undergoes a photolytic change when exposed to said desired spectrum through said opening; and a recycle system connected to said reactor chamber for reusing said rare gas and said molecular compound.
Claim 2
Independent Claim
161 words
An apparatus for growing epitaxial layers by photolysis comprising: a reactor chamber divided into two sections, said sections having a common opening between them; a sample holder in the first of said two sections for holding a given substrate on which an epitaxial layer is to be grown; an electrode discharge system in said second section of said reactor chamber for producing predetermined voltage potential; means for supplying a rare gas to said second section of the reactor chamber, said rare gas emitting light of a desired spectrum range due to electrical discharge of said voltage potential through said rare gas; means for supplying a molecular compound vapor to said first section of the reactor chamber for coating said substrate on said sample holder with a given molecular compound that undergoes a photolytic change when exposed to said desired spectrum through said opening; and a recycle system connected to said reactor chamber for reusing said rare gas and said molecular compound.
Claim 3
Dependent Claim
109 words
An apparatus for growing epitaxial layers by photolysis as described in claim 1 where said recycle system comprises: a cold trap connected to said first section of said reactor chamber for capturing molecular compound exiting said first section; a vacuum pump connected to said reactor chamber via said cold trap for evacuating said reactor chamber; a residual gas analyzer connected to said vacuum pump and reactor chamber for determining the chemical composition of material exiting said reactor chamber; and a closed loop path connected between said vacuum pump and said rare gas for recycling said rare gas if said residual gas analyzer measures a preset level of rare gas.
Claim 4
Dependent Claim
37 words
An apparatus for growing epitaxial layers by photolysis as described in claim 1 where said first and second sections of said reactor chamber comprise respectively a molecular compound vapor glass tube within a discharge gas glass tube.
Claim 5
Dependent Claim
35 words
An apparatus for growing epitaxial layers by photolysis as described in claim 1 where said sample holder further comprises a thermal control section for maintaining said substrate in said sample holder at a predetermined temperature.
Claim 6
Independent Claim
272 words
An apparatus for growing epitaxial layers by photolysis comprising: a reactor chamber with a molecular compound vapor glass tube within a discharge gas glass tube, said molecular compound vapor glass tube having an opening; a sample holder mounted in said molecular compound vapor glass tube for holding a given substrate on which an epitaxial layer is to be grown; a thermal control section connected to said sample holder for maintaining said substrate in said sample holder at a predetermined temperature; an electrode discharge system in said discharge gas glass tube for producing a predetermined voltage potential; means for supplying a rare gas to the discharge gas glass tube of said reactor chamber, said rare gas emitting light of a desired spectrum range due to electric discharge of said voltage potential through said rare gas; means for supplying a molecular compound vapor to said molecular compound vapor glass tube for coating said substrate on said sample holder with a given molecular compound that undergoes a photolytic change when exposed to said desired spectrum through said opening; a cold trap connected to said molecular compound vapor glass tube for capturing molecular compound as it exits said vapor glass tube; a vacuum pump connected to said reactor chamber via said cold trap for evacuating said reactor chamber; a residual gas analyzer connected to said vacuum pump and reactor chamber for determining the chemical composition of material exiting said reactor chamber; and a closed loop path connected between said vacuum pump and said means for supplying said rare gas for recycling said rare gas if said residual gas analyzer measures a preset level of rare gas.
Claim 7
Independent Claim
272 words
An apparatus for growing epitaxial layers by photolysis comprising: a reactor chamber with a molecular compound vapor glass tube within a discharge gas glass tube, said molecular compound vapor glass tube having an opening; a sample holder mounted in said molecular compound vapor glass tube for holding a given substrate on which an epitaxial layer is to be grown; a thermal control section connected to said sample holder for maintaining said substrate in said sample holder at a predetermined temperature; an electrode discharge system in said discharge gas glass tube for producing a predetermined voltage potential; means for supplying a rare gas to the discharge gas glass tube of said reactor chamber, said rare gas emitting light of a desired spectrum range due to electric discharge of said voltage potential through said rare gas; means for supplying a molecular compound vapor to said molecular compound vapor glass tube for coating said substrate on said sample holder with a given molecular compound that undergoes a photolytic change when exposed to said desired spectrum through said opening; a cold trap connected to said molecular compound vapor glass tube for capturing molecular compound as it exits said vapor glass tube; a vacuum pump connected to said reactor chamber via said cold trap for evacuating said reactor chamber; a residual gas analyzer connected to said vacuum pump and reactor chamber for determining the chemical composition of material exiting said reactor chamber; and a closed loop path connected between said vacuum pump and said means for supplying said rare gas for recycling said rare gas if said residual gas analyzer measures a preset level of rare gas.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-06-19 | 1987-12-19 | 1988-06-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-06-19 | 1991-12-19 | 1992-06-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-06-19 | 1995-12-19 | 1996-06-19 | $7700.00 | Window Closed / Lapsed |