Patent US4113833A successfully refreshed from Google Patents.
Patent US5073507A successfully refreshed from Google Patents.
US5073507A
Expired / Lapsed
US
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Producing a plasma containing beryllium and beryllium fluoride
Assignee: Motorola Solutions Inc
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Filing: 1991-03-04
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Granted: 1991-12-17
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Expires: 2011-03-04
Abstract
Abstract A plasma containing both beryllium ions and beryllium fluoride ions is achieved. Beryllium crystals are used as a cathode in an ionization chamber containing boron trifluoride gas. The boron trifluoride gas and the beryllium are ionized to produce both beryllium fluoride ions (BeF + ) and beryllium ions (Be + ). Beryllium fluoride ions are emitted to impact a semiconductor target and where they divide thereby implanting beryllium and fluorine.
Inventors
- 👤 Charles T. Keller
- 👤 Schyi-Yi Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 12:13
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10P30/218; H10P30/225; Y; Y10; Y10S; Y10S148/00; Y10S148/083; Y10S148/084
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
137 words
A method of simultaneously implanting beryllium ions and fluorine ions into a III-V semiconductor material which comprises: providing a III-V semiconductor material; providing a means for implanting ions into the semiconductor material with the means for implanting having an ionization chamber for ionizing materials, and also having a means for emitting ions of a predetermined type from the ionization chamber; providing a beryllium cathode in the ionization chamber; releasing a boron trifluoride gas into the ionization chamber; ionizing the boron trifluoride gas for the purpose of sputtering beryllium from the ceryllium cathode and producing at least beryllium fluoride ions (BeF + ) in the ionization chamber; emitting the beryllium fluoride ions from the means for implanting into the III-V semiconductor material; and separating the beryllium fluoride ions into beryllium and fluorine that penetrate into the semiconductor material.
Claim 2
Independent Claim
137 words
A method of simultaneously implanting beryllium ions and fluorine ions into a III-V semiconductor material which comprises: providing a III-V semiconductor material; providing a means for implanting ions into the semiconductor material with the means for implanting having an ionization chamber for ionizing materials, and also having a means for emitting ions of a predetermined type from the ionization chamber; providing a beryllium cathode in the ionization chamber; releasing a boron trifluoride gas into the ionization chamber; ionizing the boron trifluoride gas for the purpose of sputtering beryllium from the ceryllium cathode and producing at least beryllium fluoride ions (BeF + ) in the ionization chamber; emitting the beryllium fluoride ions from the means for implanting into the III-V semiconductor material; and separating the beryllium fluoride ions into beryllium and fluorine that penetrate into the semiconductor material.
Claim 3
Dependent Claim
38 words
The method of claim 1 wherein separating the beryllium fluoride ions includes impinging the beryllium fluoride ions onto a surface of the III-V semiconductor material wherein the beryllium fluoride ions separate on impact with the III-V semiconductor material.
Claim 4
Dependent Claim
57 words
The method of claim 1 wherein separating the beryllium fluoride ions into beryllium and fluorine includes separating a first portion of the beryllium fluoride ions (BeF + ) into beryllium ions (Be + ) and fluorine atoms (F), and a second portion of the beryllium fluoride ions into beryllium atoms (Be) and fluorine ions (F + ).
Claim 5
Independent Claim
83 words
A method of generating a plasma having ions of beryllium and ions of beryllium fluoride molecules suitable for implanting into semiconductor materials which comprises: providing an ionization chamber for ionizing materials; providing a beryllium cathode in the ionization chamber; releasing a fluorine species gas into the ionization chamber; ionizing the fluorine species gas for the purpose of ionizing beryllium from the beryllium cathode and producing at least beryllium ions (Be + ) and beryllium fluoride ions (BeF + ) in the ionization chamber.
Claim 6
Independent Claim
83 words
A method of generating a plasma having ions of beryllium and ions of beryllium fluoride molecules suitable for implanting into semiconductor materials which comprises: providing an ionization chamber for ionizing materials; providing a beryllium cathode in the ionization chamber; releasing a fluorine species gas into the ionization chamber; ionizing the fluorine species gas for the purpose of ionizing beryllium from the beryllium cathode and producing at least beryllium ions (Be + ) and beryllium fluoride ions (BeF + ) in the ionization chamber.
Claim 7
Dependent Claim
39 words
The method of claim 4 wherein the releasing a fluorine species gas into the ionization chamber includes releasing into the ionization chamber a gas selected from the group including boron trifluoride, nitrogen trifluoride, hydrogen fluoride, silicon tetrafluoride, and fluorine.
Claim 8
Independent Claim
78 words
A method of producing a plasma which comprises: providing an ionization chamber for ionizing materials; providing a cathode in the ionization chamber wherein the cathode is a material selected from the group including beryllium, magnesium, calcium, strontium, barium, radium, zinc, cadmium, and mercury; releasing a fluorine species gas into the chamber; and ionizing the fluorine species gas for the purpose of ionizing material from the cathode and producing at least ions that are fluorides of the cathode material
Claim 9
Independent Claim
78 words
A method of producing a plasma which comprises: providing an ionization chamber for ionizing materials; providing a cathode in the ionization chamber wherein the cathode is a material selected from the group including beryllium, magnesium, calcium, strontium, barium, radium, zinc, cadmium, and mercury; releasing a fluorine species gas into the chamber; and ionizing the fluorine species gas for the purpose of ionizing material from the cathode and producing at least ions that are fluorides of the cathode material
Claim 10
Dependent Claim
30 words
The method of claim 6 wherein releasing a fluorine species gas includes releasing a gas selected from the group including nitrogen trifluoride, boron trifluoride, hydrogen fluoride, silicon tetrafluoride, and fluorine.
Claim 11
Independent Claim
62 words
A method of simultaneously implanting beryllium and fluorine into a semiconductor substrate, comprising: using beryllium crystals as a cathode in an ionization chamber containing boron trifluoride gas; ionizing the boron trifluoride gas and the beryllium to form at least beryllium fluoride ions; and emitting the beryllium fluoride ions into the semiconductor substrate where the ions divide thereby simultaneously implanting beryllium and fluorine.
Claim 12
Independent Claim
62 words
A method of simultaneously implanting beryllium and fluorine into a semiconductor substrate, comprising: using beryllium crystals as a cathode in an ionization chamber containing boron trifluoride gas; ionizing the boron trifluoride gas and the beryllium to form at least beryllium fluoride ions; and emitting the beryllium fluoride ions into the semiconductor substrate where the ions divide thereby simultaneously implanting beryllium and fluorine.
Claim 13
Dependent Claim
57 words
The method of claim 8 wherein emitting the beryllium fluoride ions into the semiconductor substrate includes separating a first portion of the beryllium fluoride ions (BeF + ) into beryllium ions (Be + ) and fluorine atoms (F), and a second portion of the beryllium fluoride ions into beryllium atoms (Be) and fluorine ions (F + ).
References Cited (Backward Citations)
US3684667A
Cited
US4502898A
Cited
US4732870A
Cited
US4558509A
Cited
US4843033A
Cited
US4868633A
Cited
JPS63288083A
Cited
JPS6422172A
Cited
JPS6443267A
Cited
US4889824A
Cited
US4883686A
Cited
US4937094A
Cited
JPH028867A
Cited
US4904616A
Cited
US4988640A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-12-16 | 1995-06-17 | 1995-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-12-16 | 1999-06-17 | 1999-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-12-16 | 2003-06-17 | 2003-12-17 | $7700.00 | Window Closed / Lapsed |