US4502898A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Diffusion procedure for semiconductor compound
Assignee: Nokia Bell Labs
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Filing: 1983-12-21
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Granted: 1985-03-05
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Expires: 2003-12-21
Abstract
Abstract A process is described for doping compound semiconductors using a metal fluoride (e.g., ZnF 2 ) as the source of dopant. The anhydrous metal fluoride is put down on the surface of the compound semiconductor, capped with a suitable encapsulant and heat treated to promote the diffusion. The heat treatment can be carried out in air without danger of surface damage to the compound semiconductor. Also, the diffusion is better controlled as to depth of diffusion and boundary delineation.
Inventors
- 👤 Irfan Camlibel
- 👤 Howard J. Guggenheim
- 👤 Shobha Singh
- 👤 LeGrand G. Van Uitert
- 👤 George J. Zydzik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 19:10
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/17; H10P32/174; Y; Y10; Y10S; Y10S252/00; Y10S252/95
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
84 words
A process for fabricating a device comprising III-V semiconducting compounds in which at least part of the III-V semiconductor compound is doped with at least one dopant substance selected from the group consisting of zinc and cadmium characterized in that the doping procedure is carried out by heat treating the III-V semiconductor compound with the inorganic fluoride of the doping substance in contact with the III-V semiconductor compound at a sufficient temperature and for sufficient time to affect doping of the III-V semiconductor compound.
Claim 2
Dependent Claim
84 words
A process for fabricating a device comprising III-V semiconducting compounds in which at least part of the III-V semiconductor compound is doped with at least one dopant substance selected from the group consisting of zinc and cadmium characterized in that the doping procedure is carried out by heat treating the III-V semiconductor compound with the inorganic fluoride of the doping substance in contact with the III-V semiconductor compound at a sufficient temperature and for sufficient time to affect doping of the III-V semiconductor compound.
Claim 3
Dependent Claim
22 words
The process of claim 1 in which the inorganic fluoride is selected from the group consisting of zinc fluoride and cadmium fluoride.
Claim 4
Dependent Claim
12 words
The process of claim 2 in which the inorganic fluoride is anhydrous.
Claim 5
Dependent Claim
19 words
The process of claim 1 in which the inorganic fluoride is covered with an encapsulant prior to heat treating.
Claim 6
Dependent Claim
33 words
The process of claim 4 in which the encapsulant comprises at least one substance selected from the group consisting of Al 2 O 3 , SiO 2 , phosphosilicate glass, and borosilicate glass.
Claim 7
Dependent Claim
19 words
The process of claim 1 in which the dopant substance is deposited by magnetron sputtering, E-beam deposition or evaporation.
Claim 8
Dependent Claim
15 words
The process of claim 6 in which the dopant substance is deposited by E-beam deposition.
Claim 9
Dependent Claim
18 words
The process of claim 7 in which the dopant substance and an encapsulant are deposited by E-beam deposition.
Claim 10
Dependent Claim
23 words
The process of claim 1 in which the heat treatment is carried out in the temperature range from 300 to 650 degrees C.
Claim 11
Dependent Claim
21 words
The process of claim 1 in which the time duration of the heat treatment varies from 1 minute to 100 hours.
Claim 12
Dependent Claim
13 words
The process of claim 8 in which the dopant substance is zinc fluoride.
Claim 13
Dependent Claim
27 words
The process of claim 11 in which the zinc fluoride has been heated in an atmosphere comprising fluoride-containing substance prior to deposition on the III-V semiconductor compound.
Claim 14
Dependent Claim
13 words
The process of claim 12 in which the fluoride-containing substance is hydrogen fluoride.
Claim 15
Dependent Claim
29 words
The process of claim 1 in which the III-V semiconductor compound is selected from the group consisting of InP, GaAs, InSb, GaSb, AlSb, InAs, InGaAs, AlGaPAs, GaInPAs and GaInAsSb.
Claim 16
Dependent Claim
20 words
The process of claim 14 in which the semiconductor compound is InP and the dopant substance is ZnF 2 .
Claim 17
Dependent Claim
28 words
The process of claim 15 in which the heat treatment is carried out at a temperature between 300 and 550 degrees C. for 30 minutes to 72 hours.
Claim 18
Dependent Claim
21 words
The process of claim 14 in which the III-V semiconductor compound is InGaAs and the dopant substance is ZnF 2 .
Claim 19
Dependent Claim
28 words
The process of claim 17 in which the temperature of the heat treatment is from 450 to 600 degrees C. for times between 30 minutes and 72 hours.
Claim 20
Dependent Claim
21 words
The process of claim 14 in which the III-V semiconductor compound is GaAs and the doped substance is ZnF 2 .
Claim 21
Dependent Claim
30 words
The process of claim 14 in which the III-V semiconductor compound is selected from the group consisting of InP, GaAs, and InGaAs and the dopant substance is CdF 2 .
Claim 22
Dependent Claim
34 words
The process of claim 20 in which the III-V semiconducting compound is InP, the dopant substance is CdF 2 and the temperature range of the heat treatment is between 450 and 650 degrees C.
Claim 23
Dependent Claim
34 words
The process of claim 20 in which the III-V semiconductor compound is InGaAs, the dopant substance is CdF 2 and the temperature range of the heat treatment is between 550 and 650 degrees C.
Claim 24
Dependent Claim
26 words
The process of claim 1 in which the device is selected from the group consisting of P-I-N planar photodiode, Mesa photodiode, light-emitting diode and semiconductor laser.
References Cited (Backward Citations)
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Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-03-04 | 1988-09-03 | 1989-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-03-04 | 1992-09-03 | 1993-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-03-04 | 1996-09-03 | 1997-03-05 | $7700.00 | Window Closed / Lapsed |