Image sensor

Claim 2

An image sensor comprising: a semiconductor substrate of a first conductivity type, said substrate having opposed major surfaces and opposed edges between said surfaces, one of said edges having a surface which is receptive to light; an image sensor element formed in said substrate and located adjacent said one edge, said image sensor element including a charge collection and transfer means and an image sensing region in which charge carriers are generated by light impinging on the surface of said one edge, said image sensor element further including means for creating a storage region in said substrate for receiving charge carriers generated by light impinging on said edge surface and means for effecting the transfer of charge carriers from said storage region to said charge collection and transfer means; and means in said substrate for guiding charge carriers in said image sensing region into said storage region.

Claim 3

An image sensor, as defined in claim 1, wherein said guiding means includes a first highly conductive layer of said first conductivity type located adjacent said one major surface and a second highly conductive layer of said first conductive type located adjacent an opposite major surface.

Claim 4

An image sensor, as defined in claim 1, wherein said charge collection and transfer means includes an N-type region of a buried-channel CCD.

Claim 5

An image sensor, as defined in claim 1, wherein said sensor includes a first column of said image sensor elements adjacent said one edge.

Claim 6

An image sensor, as defined in claim 4, wherein said sensor includes a second column of image sensor elements adjacent a second edge.

Claim 7

An image sensor, as defined in claim 5, wherein said sensor includes a third column of image sensor elements on one of said major surfaces and located between said first and second columns.

Claim 8

An image sensor, as defined in claim 6, wherein each of said image sensor elements in said third column includes a photodiode in the image sensing region.

Claim 9

An image sensor comprising: a semiconductor substrate of a first conductivity type, said substrate having opposed major surfaces and opposed edges between said surfaces, said edges being receptive to light impinging on a surface thereof; a row of image sensor elements in said substrate, a first element being adjacent one of said edges, a second element being adjacent an opposite edge, and a third element being adjacent one of said major surfaces, each of said elements including a storage gate for creating a storage region in said substrate and a transfer gate for effecting movement of charge carriers from said storage region to a charge collection and transfer means in said image sensor element; and a highly conductive layer of said first conductivity type adjacent each of said major surfaces and extending to said opposed edges whereby charge carriers generated by light entering said edges are directed to the storage regions of said first and second elements.

Claim 10

An image sensor comprising: a semiconductor substrate of a first conductivity type, said substrate having opposed major surfaces and opposed edges between said surfaces, said edges being receptive to light impinging on a surface thereof; a row of image sensor elements in said substrate, a first element being adjacent one of said edges, a second element being adjacent an opposite edge, and a third element being adjacent one of said major surfaces, each of said elements including a storage gate for creating a storage region in said substrate and a transfer gate for effecting movement of charge carriers from said storage region to a charge collection and transfer means in said image sensor element; and a highly conductive layer of said first conductivity type adjacent each of said major surfaces and extending to said opposed edges whereby charge carriers generated by light entering said edges are directed to the storage regions of said first and second elements.

Claim 11

An image sensor, as defined in claim 8, wherein said third element includes a photodiode.

Claim 12

An image sensor, as defined claim 8, wherein the charge collection and transfer means of each of said image sensor elements includes an N-type region of a buried-channel CCD.

Claim 13

An image sensor, as defined in claim 10, wherein said first and second elements have storage regions which extend to said edges.

Claim 14

An image sensor, as defined in claim 10, wherein each of said CCD's includes a clock terminal for shifting charge carriers out of said CCD.

Claim 15

An image sensor comprising: a semiconductor substrate of a first conductivity type, said substrate having opposed major surfaces and opposed edges between said surfaces, one of said edges having an imaging plane on a surface thereof; image sensor elements formed in said substrate adjacent said one edge, said elements including means for collecting charge carriers generated by light impinging on said imaging plane and means for transferring collected charge carriers out of the elements; and layers of a highly doped material of said first conductivity type formed adjacent said surfaces and extending to said one edge, one of said layers extending between said image sensor elements and said one edge, said layers defining an aperture for the reception of light through said one edge and for guiding charge carriers into said collecting means.

Claim 16

An image sensor comprising: a semiconductor substrate of a first conductivity type, said substrate having opposed major surfaces and opposed edges between said surfaces, one of said edges having an imaging plane on a surface thereof; image sensor elements formed in said substrate adjacent said one edge, said elements including means for collecting charge carriers generated by light impinging on said imaging plane and means for transferring collected charge carriers out of the elements; and layers of a highly doped material of said first conductivity type formed adjacent said surfaces and extending to said one edge, one of said layers extending between said image sensor elements and said one edge, said layers defining an aperture for the reception of light through said one edge and for guiding charge carriers into said collecting means.

Claim 17

An image sensor, as defined in claim 13, wherein said aperture is between about 1 micron and about 20 microns in width.

Claim 18

An image sensor, as defined in claim 13, wherein said first conductivity type is a P-type material.