US4274104A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electrooptical integrated circuit communication
Assignee: International Business Machines Corp
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Filing: 1979-05-21
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Granted: 1981-06-16
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Expires: 1999-05-21
Abstract
Abstract The overall performance of integrated circuit systems is enhanced by the use of optical drivers and receivers to send and receive information between the devices on the chip and between individual chips in a system. A single substrate of gallium arsenide employs both the high carrier mobility properties and the electrooptical signal conversion properties on a single substrate to provide both high performance electrical properties and high density and high performance communication properties.
Inventors
- 👤 Frank F. Fang
- 👤 Roland Y. Hung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 10:41
CPC Classifications
H; H04; H04B; H04B10/00; H04B10/29; H10; H10F; H10F55/00; H10F55/10; H10F55/15; H10F55/155; H10H; H10H29/00; H10H29/10
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
170 words
An integrated circuit structure comprising in combination: a semiconductor member of a material having at least in selected areas the semiconductor properties of both high carrier mobility and high electrooptical conversion; at least one optical signal output member operable to communicate information signals from said semiconductor member; an electrical-to-light electrooptical conversion means employing said material of said semiconductor member positioned in a discrete area of said semiconductor member adjacent to and in optical coupling relationship with each said optical signal output member; at least one optical signal input member operable to communicate information signals to said semiconductor member; an optical-to-electrical electrooptical conversion means employing the material of said semiconductor member positioned in a discrete area of said semiconductor member adjacent to and in optical coupling with each said optical signal input member; and at least one active semiconductor in a discrete area of said semiconductor member employing said material of said semiconductor member and operable to process signals between said at least one input and said at least one output.
Claim 2
Dependent Claim
170 words
An integrated circuit structure comprising in combination: a semiconductor member of a material having at least in selected areas the semiconductor properties of both high carrier mobility and high electrooptical conversion; at least one optical signal output member operable to communicate information signals from said semiconductor member; an electrical-to-light electrooptical conversion means employing said material of said semiconductor member positioned in a discrete area of said semiconductor member adjacent to and in optical coupling relationship with each said optical signal output member; at least one optical signal input member operable to communicate information signals to said semiconductor member; an optical-to-electrical electrooptical conversion means employing the material of said semiconductor member positioned in a discrete area of said semiconductor member adjacent to and in optical coupling with each said optical signal input member; and at least one active semiconductor in a discrete area of said semiconductor member employing said material of said semiconductor member and operable to process signals between said at least one input and said at least one output.
Claim 3
Dependent Claim
14 words
The integrated circuit structure of claim 1 wherein said semiconductor member is gallium arsenide.
Claim 4
Dependent Claim
24 words
The integrated circuit structure of claim 1 wherein said semiconductor member is gallium arsenide that is semi-insulating containing discrete regions therein that are semiconductive.
Claim 5
Dependent Claim
46 words
The integrated circuit structure of claim 1 including at least one combination of optical-to-electrical and electrical-to-optical electrooptical conversion means employing said material of said semiconductor linked by an optical signal transport member and operable to provide information signal transfer between discrete areas of said semiconductor member.
Claim 6
Dependent Claim
14 words
The integrated circuit structure of claim 4 wherein said semiconductor member is gallium arsenide.
Claim 7
Dependent Claim
24 words
The integrated circuit structure of claim 5 wherein said semiconductor member is gallium arsenide that is semi-insulating containing discrete regions therein that are semiconductive.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-06-15 | 1984-12-15 | 1985-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-06-15 | 1988-12-15 | 1989-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-06-15 | 1992-12-15 | 1993-06-16 | $7700.00 | Window Closed / Lapsed |