Abstract A charge-coupled device (CCD) image sensor includes in a substrate of single crystalline silicon of one conductivity type an array of a plurality of spaced, parallel channel regions of the opposite conductivity type extending along one major surface of the substrate. A plurality of parallel conductive gates are over the one major surface of the substrate and extend transversely across the channel regions. The outermost channel regions of the array are positioned adjacent edges of the substrate so that a plurality of the image sensors can be mounted in edge-to-edge relation with the channel regions of the various sensors being close together. The sensor includes passivating means between each outermost channel region and the adjacent edge to prevent charge carriers generated by the edge from being injected into the outermost channel region. The passivating means includes a highly conductive drain region of a conductivity type opposite to that of the substrate within the substrate and extending along the one major surface between the outermost channel region and the edge. Also, a highly conductive region of the same conductivity type as the substrate is on the substrate and extends along the one major surface directly at the edge.
An image sensor comprising a substrate of single crystalline silicon of one conductivity type having a pair of opposed major surfaces and edges, a sensor array incorporated in said substrate, said array including a plurality of detectors extending in parallel columns along one of said major surface, at least one of said columns being adjacent an edge of the substrate, a drain means in said substrate between said edge of the substrate and the adjacent column of detectors for receiving any charge carriers generated at said edge to prevent charge carriers from being injected into said adjacent detectors, and a highly conductive region of the same conductivity type as the substrate within the substrate and extending along said one surface directly at said edge for preventing the depletion region caused by generated charges from extending to said edge.
Claim 2
Dependent Claim
138 words
An image sensor comprising a substrate of single crystalline silicon of one conductivity type having a pair of opposed major surfaces and edges, a sensor array incorporated in said substrate, said array including a plurality of detectors extending in parallel columns along one of said major surface, at least one of said columns being adjacent an edge of the substrate, a drain means in said substrate between said edge of the substrate and the adjacent column of detectors for receiving any charge carriers generated at said edge to prevent charge carriers from being injected into said adjacent detectors, and a highly conductive region of the same conductivity type as the substrate within the substrate and extending along said one surface directly at said edge for preventing the depletion region caused by generated charges from extending to said edge.
Claim 3
Dependent Claim
37 words
An image sensor in accordance with claim 1 in which the drain is a high conductivity region of a conductivity type opposite to that of the substrate within the substrate and extending along said one major surface.
Claim 4
Dependent Claim
70 words
An image sensor in accordance with claim 1 in which the sensor array includes a plurality of spaced channel regions of a conductivity type opposite to that of the substrate within the substrate and extending along said one major surface with at least one of said channels being adjacent the edge of the substrate and a plurality of conductive gates extending across said major surface and transversely across the channels.
Claim 5
Dependent Claim
37 words
An image sensor in accordance with claim 3 in which the drain is a high conductivity region of a conductivity type opposite to that of the substrate within the substrate and extending along said one major surface.
Claim 6
Dependent Claim
43 words
An image sensor in accordance with claim 4 including a high conductivity region along the other major surface of the substrate and means whereby the depletion region of the drain can extend through the thickness of the substrate to the high conductivity region.