US3772576A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Planar semiconductor device with scribe lines and channel stopper
Assignee: US Philips Corp
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Filing: 1971-12-30
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Granted: 1973-11-13
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Expires: 1991-12-30
Abstract
Abstract A discrete semiconductor device and method of making same by severing a chip from a wafer containing a plurality of such devices made by planar techniques is described. The invention features the diffusion of a continuous grid pattern, preferably simultaneously with the base diffusion, defining future scribe lanes along which the wafer will be scribed prior to severance into chips. Subsequently, a second diffusion step, preferably simultaneously with the emitter diffusion, is carried out to provide, completely overlapping the previously diffused region, an annular region having a higher dopant level to inhibit creation of a channel between the base region and the chip edge. Subsequently, the wafer is severed into chips along the scribe lanes.
Inventors
- 👤 R Nienhuis
- 👤 C Busselaar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:27
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/112; H10D99/00; H10P; H10P95/00; H10W; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/028
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
212 words
A planar semiconductor device comprising a semiconductor body having severed peripheral edges and having a first semiconductor region of one conductivity type extending to the severed edges of the semiconductor body and within the first region a second surface zone of the opposite conductivity type spaced from the body edges and forming a p-n junction with the first region, said body also having a third continuous narrow surface edge zone of said opposite conductivity type extending to and all around the peripheral severed edges of said body, and a continuous narrow annular fourth zone of the one conductivity type formed at the surface on the same side of the semiconductor body as the other zones, said fourth zone adjoining the third edge zone and extending to the severed edges and all around the whole periphery of the first semiconductor region, said annular fourth zone being more strongly doped at least at the surface than the adjoining parts of the first region, said fourth zone being wider than the third zone and thus overlapping completely the third zone with the inner peripheral edge of the fourth zone being closer to the second surface zone than that of the third zone, whereby the breakdown voltage and leakage current characteristics of the device are improved.
Claim 2
Dependent Claim
212 words
A planar semiconductor device comprising a semiconductor body having severed peripheral edges and having a first semiconductor region of one conductivity type extending to the severed edges of the semiconductor body and within the first region a second surface zone of the opposite conductivity type spaced from the body edges and forming a p-n junction with the first region, said body also having a third continuous narrow surface edge zone of said opposite conductivity type extending to and all around the peripheral severed edges of said body, and a continuous narrow annular fourth zone of the one conductivity type formed at the surface on the same side of the semiconductor body as the other zones, said fourth zone adjoining the third edge zone and extending to the severed edges and all around the whole periphery of the first semiconductor region, said annular fourth zone being more strongly doped at least at the surface than the adjoining parts of the first region, said fourth zone being wider than the third zone and thus overlapping completely the third zone with the inner peripheral edge of the fourth zone being closer to the second surface zone than that of the third zone, whereby the breakdown voltage and leakage current characteristics of the device are improved.
Claim 3
Dependent Claim
43 words
A planar semiconductor device as set forth in claim 1 wherein the surface containing the zones is covered with an insulating layer, the insulating layer on the first region between the second and fourth zones being thicker than that on the fourth zone.
Claim 4
Dependent Claim
25 words
A planar semiconductor device as set forth in claim 1 wherein the fourth zone overlaps the third zone by between 3 to 10 Mu m.
Claim 5
Dependent Claim
98 words
A planar semiconductor device as set forth in claim 1 wherein the device is a transistor, the second zone is the base zone, a fifth emitter zone of one conductivity type nests within the second base zone, the impurity distribution of the opposite-type conductivity forming impurities is a maximum at the surface and is the same in both the second base zone and the third edge zone, and the impurity distribution of the one-type conductivity forming impurities is a maximum at the surface and is the same in both the fifth emitter zone and the fourth annular zone.
Claim 6
Dependent Claim
28 words
A device as set forth in claim 4 wherein the second and third zones have the same depth, and the fourth and fifth zones have the same depth.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-11-12 | 1977-05-14 | 1977-11-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-11-12 | 1981-05-14 | 1981-11-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-11-12 | 1985-05-14 | 1985-11-13 | $7700.00 | Window Closed / Lapsed |