US3896485A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Charge-coupled device with overflow protection
Assignee: Lockheed Martin Corp
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Filing: 1973-12-03
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Granted: 1975-07-22
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Expires: 1993-12-03
Abstract
Abstract Charge sink regions are buried within the semiconductor material of a charge-coupled imaging device for sinking excess charges accumulated within the device. By locating the charge sink regions a given depth within the substrate, a limited amount of charge can be allowed to accumulate in the light sensing elements while any additional charge will transfer to the charge sink region. Also, by varying a potential applied to the charge sink region charge accumulation within the light sensing elements can be controlled.
Inventors
- 👤 James M Early
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 02:49
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/335; H10D44/00; H10D44/40; H10D44/45; H10D44/462; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/158
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
128 words
Structure which comprises: a. a light sensing element comprising a first region of semiconductor material overlaid by a first electrode separated from said semiconductor material by insulation, said light sensing element being capable of containing a charge packet; b. an adjacent region of said semiconductor material disposed for receiving said charge packet from said light sensing element; c. means for controlling the transfer of said charge packet from said light sensing element to said adjacent regions; and, d. charge sink means having a contact for applying a bias thereto buried within said semi-conductor material and disposed for receiving excess charge accumulated in said light sensing element, said charge sink means extending laterally from said contact toward said light sensing element while beneath the surface of said semiconductor material.
Claim 2
Dependent Claim
128 words
Structure which comprises: a. a light sensing element comprising a first region of semiconductor material overlaid by a first electrode separated from said semiconductor material by insulation, said light sensing element being capable of containing a charge packet; b. an adjacent region of said semiconductor material disposed for receiving said charge packet from said light sensing element; c. means for controlling the transfer of said charge packet from said light sensing element to said adjacent regions; and, d. charge sink means having a contact for applying a bias thereto buried within said semi-conductor material and disposed for receiving excess charge accumulated in said light sensing element, said charge sink means extending laterally from said contact toward said light sensing element while beneath the surface of said semiconductor material.
Claim 3
Dependent Claim
18 words
Structure as defined in claim 1 further including means for applying a potential to said charge sink means.
Claim 4
Dependent Claim
24 words
Structure as defined in claim 1, wherein said charge sink means comprises a region of conductivity type opposite to that of said semiconductor material.
Claim 5
Dependent Claim
13 words
Structure as defined in claim 1, wherein said first electrode comprises polycrystalline silicon.
Claim 6
Dependent Claim
139 words
Structure which comprises: a. a first semiconductor substrate; b. a second semiconductor substrate located over said first substrate; c. a light sensing element comprising a first region of said second substrate overlaid by a first electrode separated from said second substrate by insulation, said light sensing element being capable of containing a charge packet; d. an adjacent region of said second substrate disposed for receiving said charge packet from said light sensing element; e. means for controlling the transfer of said charge packet from said light sensing element to said adjacent region; and, f. charge sink means located in and extending laterally along the surface of said first substrate so that said charge sink means lies beneath the surface of said second substrate, said charge sink means being disposed for receiving excess charge accumulated within said light sensing element.
Claim 7
Dependent Claim
139 words
Structure which comprises: a. a first semiconductor substrate; b. a second semiconductor substrate located over said first substrate; c. a light sensing element comprising a first region of said second substrate overlaid by a first electrode separated from said second substrate by insulation, said light sensing element being capable of containing a charge packet; d. an adjacent region of said second substrate disposed for receiving said charge packet from said light sensing element; e. means for controlling the transfer of said charge packet from said light sensing element to said adjacent region; and, f. charge sink means located in and extending laterally along the surface of said first substrate so that said charge sink means lies beneath the surface of said second substrate, said charge sink means being disposed for receiving excess charge accumulated within said light sensing element.
Claim 8
Dependent Claim
20 words
A structure as defined in claim 5 further characterized by means for applying a potential to said charge sink means.
Claim 9
Independent Claim
105 words
A method of operating a charge-coupled imaging device formed in semiconductor material containing at least one light sensing element and a charge sink region having a contact for applying a first potential thereto located beneath the surface of said semiconductor material and extending laterally from said contact toward said at least one light sensing element, which comprises: a. accumulating packets of charge in said at least one light sensing element; and, b. allowing excess charges within said at least one light sensing element to transfer to said charge sink region by applying said first potential to said charge sink region during a selected time interval.
Claim 10
Independent Claim
105 words
A method of operating a charge-coupled imaging device formed in semiconductor material containing at least one light sensing element and a charge sink region having a contact for applying a first potential thereto located beneath the surface of said semiconductor material and extending laterally from said contact toward said at least one light sensing element, which comprises: a. accumulating packets of charge in said at least one light sensing element; and, b. allowing excess charges within said at least one light sensing element to transfer to said charge sink region by applying said first potential to said charge sink region during a selected time interval.
Claim 11
Dependent Claim
40 words
A method as defined in claim 7 further including the step of preventing the accumulation of said packets of charge within said light sensing element by applying a second potential to said charge sink means durinG a second time interval.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-07-21 | 1979-01-20 | 1979-07-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-07-21 | 1983-01-20 | 1983-07-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-07-21 | 1987-01-20 | 1987-07-22 | $7700.00 | Window Closed / Lapsed |