Solid body image sensor having charge coupled semiconductor charge shift elements and method of operation

Claim 2

In an image sensor of the type having image elements arranged in a matrix, wherein each of the image elements comprises a first and a second electrode arrangement, wherein each of the image elements are photosensitive and the image elements form charge-coupled shift registers in rows, wherein all of the first electrode arrangements in each row are connected to a respective one of a plurality of first control lines and all of the second electrode arrangements of each row are connected to a respective one of a plurality of second control lines, wherein the two control lines of a row are connectible via switches to drive lines, wherein the switches are operated by drive registers, and wherein output coupling devices are provided for output coupling image information, the improvement for a single-phase mode of operation wherein: each first control line is located between adjacent rows of image elements and is connected in common to each of said first electrode arrangements of the adjacent rows of image elements; each second control line is located between the other adjacent rows of image elements and is connected in common to each of said second electrode arrangements of the other adjacent rows of image elements; two pairs of drive lines each having two drive lines are provided; and a plurality of switches is provided, respective switches connecting each of said first control lines to the two drive lines of a first pair of said two pairs of drive lines and connecting each of said second control lines to the two drive lines of a second pair of said two pairs of drive lines.

Claim 3

A process for operating an image sensor of the type having image elements arranged in a matrix wherein each of the image elements comprises a first and a second electrode arrangement, wherein each of the image elements are photosensitive and the image elements form charge-coupled shift registers in rows, wherein all of the first electrode arrangements in each row are connected to a respective one of a plurality of first control lines and all of the second electrode arrangements of each row are connected to a respective one of a plurality of second control lines, wherein the two control lines of a row are connectible via switches to drive lines, wherein the switches are operated by drive registers, wherein output coupling devices are provided for output coupling image information, wherein each first control line is located between adjacent rows of image elements and is connected in common to each of the first electrode arrangements of the adjacent rows of image elements, wherein each second control line is located between other adjacent rows of image elements and is connected in common to each of the second electrode arrangements of the other adjacent rows of image elements, wherein two pairs of drive lines each having two drive lines are provided, and wherein a plurality of switches connect each of the first control lines to the two drive lines of a first pair of the two pairs of drive lines and connect each of the second control lines to the two drive lines of the second pair of the two pairs of drive lines, for a pulsed read-out of a shift register comprising image elements in a row, the improvement comprising the steps of: applying a pulse train φ t to one of the control lines to which one of the electrode arrangements of each of the image elements is connected; applying a potential φ U to the other control line to which the other electrode arrangement of each image element of a shift register is connected; and applying potentials φ 0 and φ 2 to the other control lines of the matrix by applying different ones of the potentials φ 0 and φ 2 to adjacent control lines, the pulse train potential changing at the maximum between the values φ 1 and φ 2 , wherein the following condition applies Substrate Potential ≧ φ 0 >φ 1 >φ U >φ 2 for n-conducting substrate Substrate Potential ≦ φ 0 <φ 1 >φ U <φ 2 for p-conducting substrate wherein the mathematic symbols > and < relate to the number from -∞ to +∞.

Claim 4

A process for operating an image sensor of the type having image elements arranged in a matrix wherein each of the image elements comprises a first and a second electrode arrangement, wherein each of the image elements are photosensitive and the image elements form charge-coupled shift registers in rows, wherein all of the first electrode arrangements in each row are connected to a respective one of a plurality of first control lines and all of the second electrode arrangements of each row are connected to a respective one of a plurality of second control lines, wherein the two control lines of a row are connectible via switches to drive lines, wherein the switches are operated by drive registers, wherein output coupling devices are provided for output coupling image information, wherein each first control line is located between adjacent rows of image elements and is connected in common to each of the first electrode arrangements of the adjacent rows of image elements, wherein each second control line is located between other adjacent rows of image elements and is connected in common to each of the second electrode arrangements of the other adjacent rows of image elements, wherein two pairs of drive lines each having two drive lines are provided, and wherein a plurality of switches connect each of the first control lines to the two drive lines of a first pair of the two pairs of drive lines and connect each of the second control lines to the two drive lines of the second pair of the two pairs of drive lines, for a pulsed read-out of a shift register comprising image elements in a row, the improvement comprising the steps of: applying a pulse train φ t to one of the control lines to which one of the electrode arrangements of each of the image elements is connected; applying a potential φ U to the other control line to which the other electrode arrangement of each image element of a shift register is connected; and applying potentials φ 0 and φ 2 to the other control lines of the matrix by applying different ones of the potentials φ 0 and φ 2 to adjacent control lines, the pulse train potential changing at the maximum between the values φ 1 and φ 2 , wherein the following condition applies Substrate Potential ≧ φ 0 >φ 1 >φ U >φ 2 for n-conducting substrate Substrate Potential ≦ φ 0 <φ 1 >φ U <φ 2 for p-conducting substrate wherein the mathematic symbols > and < relate to the number from -∞ to +∞.