Patent US3454732A successfully refreshed from Google Patents.
Patent US5065220A successfully refreshed from Google Patents.
US5065220A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal-to-polysilicon capacitor and method for making the same
Assignee: Texas Instruments Inc
•
Filing: 1988-05-03
•
Granted: 1991-11-12
•
Expires: 2008-05-03
Abstract
Abstract A metal-to-polysilicon capacitor, a floating-gate transistor containing such a capacitor, and a method for making the same is disclosed. The bottom plate of the capacitor is formed over a field oxide structure, and the multilevel dielectric is deposited thereover. The multilevel dielectric is removed from the capacitor area, and an oxide/nitride dielectric is deposited over the exposed bottom plate and over the multilevel by way of LPCVD. A first layer of titanium/tungsten is preferably deposited prior to contact etch, and the contacts to moat and unrelated polysilicon are formed. Metallization is sputtered overall, and the metal and titanium/tungsten are cleared to leave the metallization filling the contact holes, and a capacitor having a titanium/tungsten and metal top plate.
Inventors
- 👤 James L. Paterson
- 👤 Howard L. Tigelaar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:10
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B10/00; H10B10/12; H10B10/125; H10B12/30; H10B12/31; H10B41/00; H10B41/40; H10B41/42; H10B41/43; H10B41/48; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/692; H10D1/696; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0174; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10P; H10P14/00; H10P14/40; H10P14/412; H10P14/416; H10P14/60; H10P14/63; H10P14/6302; H10P14/6316; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10W20/0698; H10D84/8312; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
114 words
A capacitor formed at a predetermined location at the surface of a semiconductor body, comprising: a field dielectric structure at said surface; a bottom plate, comprising a metal silicide film, said bottom plate disposed over said field dielectric structure; a multilevel dielectric, disposed over said surface, overlapping an edge of said bottom plate, and not present over a portion of said bottom plate; a capacitor dielectric layer, disposed over and in contact with said bottom plate at the portion of said bottom plate over which said multilevel dielectric is not disposed, and disposed over said multilevel dielectric; a top plate, comprising a metal layer, disposed over and in contact with said capacitor dielectric layer.
Claim 2
Dependent Claim
114 words
A capacitor formed at a predetermined location at the surface of a semiconductor body, comprising: a field dielectric structure at said surface; a bottom plate, comprising a metal silicide film, said bottom plate disposed over said field dielectric structure; a multilevel dielectric, disposed over said surface, overlapping an edge of said bottom plate, and not present over a portion of said bottom plate; a capacitor dielectric layer, disposed over and in contact with said bottom plate at the portion of said bottom plate over which said multilevel dielectric is not disposed, and disposed over said multilevel dielectric; a top plate, comprising a metal layer, disposed over and in contact with said capacitor dielectric layer.
Claim 3
Dependent Claim
32 words
A capacitor of claim 1, wherein said top plate comprises: a first metal layer in contact with said capacitor dielectric; and a second metal layer in contact with said first metal layer.
Claim 4
Dependent Claim
14 words
The capacitor of claim 2, wherein said first metal layer comprises titanium and tungsten.
Claim 5
Dependent Claim
18 words
The capacitor of claim 1, wherein said bottom plate comprises: polycrystalline silicon clad with said metal silicide film.
Claim 6
Dependent Claim
12 words
The capacitor of claim 1, wherein said capacitor dielectric comprises silicon dioxide.
Claim 7
Dependent Claim
12 words
The capacitor of claim 1, wherein said capacitor dielectric comprises silicon nitride.
Claim 8
Dependent Claim
13 words
The capacitor of claim 6, wherein said capacitor dielectric further comprises silicon dioxide.
Claim 9
Dependent Claim
21 words
The capacitor of claim 1, wherein said capacitor dielectric comprises: a layer of silicon dioxide; and a layer of silicon nitride.
Claim 10
Dependent Claim
17 words
The capacitor of claim 8, wherein said layer of silicon nitride overlies said layer of silicon dioxide.
Claim 11
Dependent Claim
23 words
The capacitor of claim 9, wherein said capacitor dielectric further comprises a second layer of silicon dioxide overlying said layer of silicon nitride.
Claim 12
Dependent Claim
17 words
The capacitor of claim 8, wherein said layer of silicon dioxide overlies said layer of silicon nitride.
Claim 13
Dependent Claim
23 words
The capacitor of claim 11, wherein said capacitor dielectric further comprises a second layer of silicon nitride overlying said layer of silicon dioxide.
Claim 14
Dependent Claim
17 words
The capacitor of claim 1, wherein said bottom plate comprises a conductive compound of a refractory metal.
Claim 15
Dependent Claim
12 words
The capacitor of claim 1, wherein said bottom plate comprises titanium nitride.
Claim 16
Dependent Claim
11 words
The capacitor of claim 1, wherein said top plate comprises aluminum.
Claim 17
Dependent Claim
134 words
A floating-gate transistor formed at a surface of a semiconductor body, comprising: a field dielectric structure at said surface; a source diffusion at said surface; a drain diffusion at said surface; a floating gate having a capacitor portion disposed over said field dielectric structure, and having a gate potion extending off of said field dielectric and disposed between said source and drain regions; a multilevel dielectric disposed over said field dielectric structure at a location away from said capacitor portion of said floating gate and overlapping an edge of said floating gate; a capacitor dielectric disposed over and in contact with the capacitor portion of said floating gate, and over said multilevel dielectric away from said floating gate; and a control gate, comprising a metal disposed over and in contact with said capacitor dielectric.
Claim 18
Dependent Claim
134 words
A floating-gate transistor formed at a surface of a semiconductor body, comprising: a field dielectric structure at said surface; a source diffusion at said surface; a drain diffusion at said surface; a floating gate having a capacitor portion disposed over said field dielectric structure, and having a gate potion extending off of said field dielectric and disposed between said source and drain regions; a multilevel dielectric disposed over said field dielectric structure at a location away from said capacitor portion of said floating gate and overlapping an edge of said floating gate; a capacitor dielectric disposed over and in contact with the capacitor portion of said floating gate, and over said multilevel dielectric away from said floating gate; and a control gate, comprising a metal disposed over and in contact with said capacitor dielectric.
Claim 19
Dependent Claim
33 words
The floating-gate transistor of claim 16, wherein said control gate comprises: a first metal layer in contact with said capacitor dielectric; and a second metal layer in contact with said first metal layer.
Claim 20
Dependent Claim
15 words
The floating-gate transistor of claim 17, wherein said first metal layer comprises titanium and tungsten.
Claim 21
Dependent Claim
16 words
The floating-gate transistor of claim 16, wherein said capacitor dielectric comprises silicon dioxide and silicon nitride.
Claim 22
Dependent Claim
22 words
The floating-gate transistor of claim 16, wherein said capacitor dielectric comprises: a layer of silicon dioxide; and a layer of silicon nitride.
Claim 23
Dependent Claim
18 words
The floating-gate transistor of claim 20, wherein said layer of silicon nitride overlies said layer of silicon dioxide.
Claim 24
Dependent Claim
12 words
The floating-gate transistor of claim 16, wherein said control gate comprises aluminum.
References Cited (Backward Citations)
US4410867A
Cited
US4732872A
Cited
US4472726A
Cited
US4419812A
Cited
US4630086A
Cited
US4466177A
Cited
JPS60148168A
Cited
US4589056A
Cited
US4768080A
Cited
US4700457A
Cited
US4628405A
Cited
US4638400A
Cited
US4760034A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-11 | 1995-05-13 | 1995-11-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-11 | 1999-05-13 | 1999-11-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-11 | 2003-05-13 | 2003-11-12 | $7700.00 | Window Closed / Lapsed |