US4410867A
Expired / Lapsed
US
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Alpha tantalum thin film circuit device
Assignee: AT&T Inc
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Filing: 1980-10-17
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Granted: 1983-10-18
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Expires: 2000-10-17
Abstract
Abstract Fabricating thin film RC networks (10) includes forming alpha tantalum capacitor base electrodes (14be) on a substrate (12), while simultaneously forming alpha tantalum anodization bus bars (14p and 14s) on the substrate. A portion of each base electrode (14be) then is anodized to form a capacitor dielectric (20) in a single anodizing step. A tantalum nitride resistor film (24) and electrically conductive films (26 and 28) then are deposited on the resultant assembly. Next, portions of the electrically conductive films are removed to define portions of capacitor counterelectrodes (22), to expose sections of the tantalum nitride resistor film (24) destined for use as resistors (24r). and to define conductor networks (30). Portions of the tantalum nitride resistor film (24) then are removed to define capacitor counterelectrode portions (24ce) and the resistors (24r), while simultaneously removing the anodization bus bars (14p and 14s). The resultant networks (10) then are thermally stabilized.
Inventors
- 👤 Frank R. Arcidiacono
- 👤 Gerard J. Koerckel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 14:56
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/80; H10D86/85
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
154 words
A thin film capacitor, which comprises: an alpha tantalum base electrode having first and second adjacent portions; a capacitor dielectric formed on only the first portion of the base electrode such that the second portion of the base electrode can be direct-connected to an electrical conductor; and a capacitor counterelectrode formed on the capacitor dielectric, the capacitor counterelectrode including a layer of tantalum nitride formed in direct contact with a first portion of the capacitor dielectric, the layer of tantalum nitride extending over the first portion of the capacitor dielectric from adjacent one end of the dielectric toward the second portion of the base electrode in essentially parallel relationship to the first portion of the base electrode and terminating in spaced relationship to the second portion of the base electrode such that the tantalum nitride layer and the second portion of the base electrode are separated by a second portion of the capacitor dielectric.
Claim 2
Dependent Claim
154 words
A thin film capacitor, which comprises: an alpha tantalum base electrode having first and second adjacent portions; a capacitor dielectric formed on only the first portion of the base electrode such that the second portion of the base electrode can be direct-connected to an electrical conductor; and a capacitor counterelectrode formed on the capacitor dielectric, the capacitor counterelectrode including a layer of tantalum nitride formed in direct contact with a first portion of the capacitor dielectric, the layer of tantalum nitride extending over the first portion of the capacitor dielectric from adjacent one end of the dielectric toward the second portion of the base electrode in essentially parallel relationship to the first portion of the base electrode and terminating in spaced relationship to the second portion of the base electrode such that the tantalum nitride layer and the second portion of the base electrode are separated by a second portion of the capacitor dielectric.
Claim 3
Dependent Claim
34 words
A thin film capacitor as recited in claim 1, wherein the second portion of the the capacitor base electrode is electrically connected to a tantalum nitride resistor to form a thin film RC network.
Claim 4
Dependent Claim
51 words
A thin film capacitor as recited in claim 1, in which the capacitor counterelectrode further includes: an electrically conductive adhesive layer, which includes a film of titanium, overlying the tantalum nitride layer formed in direct contact with the capacitor dielectric; and an electrically conductive layer overlying the electrically conductive adhesive layer.
Claim 5
Dependent Claim
35 words
A thin film capacitor as recited in claim 3, in which the electrically conductive adhesive layer of the capacitor counterelectrode includes a film of palladium between the film of titanium and the electrically conductive layer.
Claim 6
Dependent Claim
192 words
A thin film RC network, which comprises: an alpha tantalum base electrode having first and second adjacent portions; a capacitor dielectric formed on only the first portion of the base electrode such that the second portion of the base electrode can be direct-connected to an associated circuit path; a capacitor counterelectrode formed on the capacitor dielectric, the capacitor counterelectrode including a layer of tantalum nitride formed in direct contact with a first portion of the capacitor dielectric, the layer of tantalum nitride extending over the first portion of the capacitor dielectric from adjacent one end of the dielectric toward the second portion of the base electrode in essentially parallel relationship to the first portion of the base electrode and terminating in spaced relationship to the second portion of the base electrode such that the tantalum nitride layer and the second portion of the base electrode are separated by a second portion of the capacitor dielectric; a tantalum nitride resistor electrically connected to one of the electrodes; and a conductor network direct-connected by associated circuit paths, including the tantalum nitride resistor, to the capacitor counterelectrode and the second portion of the base electrode.
Claim 7
Dependent Claim
192 words
A thin film RC network, which comprises: an alpha tantalum base electrode having first and second adjacent portions; a capacitor dielectric formed on only the first portion of the base electrode such that the second portion of the base electrode can be direct-connected to an associated circuit path; a capacitor counterelectrode formed on the capacitor dielectric, the capacitor counterelectrode including a layer of tantalum nitride formed in direct contact with a first portion of the capacitor dielectric, the layer of tantalum nitride extending over the first portion of the capacitor dielectric from adjacent one end of the dielectric toward the second portion of the base electrode in essentially parallel relationship to the first portion of the base electrode and terminating in spaced relationship to the second portion of the base electrode such that the tantalum nitride layer and the second portion of the base electrode are separated by a second portion of the capacitor dielectric; a tantalum nitride resistor electrically connected to one of the electrodes; and a conductor network direct-connected by associated circuit paths, including the tantalum nitride resistor, to the capacitor counterelectrode and the second portion of the base electrode.
Claim 8
Dependent Claim
52 words
A thin film RC network as recited in claim 5, in which the capacitor counterelectrode further includes: an electrically conductive adhesive layer, which includes a film of titanium, overlying the tantalum nitride layer formed in direct contact with the capacitor dielectric; and an electrically conductive layer overlying the electrically conductive adhesion layer.
Claim 9
Dependent Claim
36 words
A thin film RC netwok as recited in claim 6, in which the electrically conductive adhesive layer of the capacitor counterelectrode includes a film of palladium between the film of titanium and the electrically conductive layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-10-17 | 1987-04-18 | 1987-10-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-10-17 | 1991-04-18 | 1991-10-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-10-17 | 1995-04-18 | 1995-10-18 | $7700.00 | Window Closed / Lapsed |