US3616282A
Expired / Lapsed
US
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Method of producing thin-film circuit elements
Assignee: HP Inc
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Filing: 1968-11-14
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Granted: 1971-10-26
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Expires: 1988-11-14
Abstract
Abstract Thin-film resistors and capacitors are formed and connected on a common substrate with high yield by forming on the substrate a first tantalum electrode for each capacitor; by anodizing a selected portion of each first electrode; by forming on the substrate a tantalum nitride element for each resistor; by heattreating the structure; by reanodizing the selected portion of each first electrode; by forming on the reanodized portion of each first electrode a second electrode for each capacitor; and by forming an interconnection between at least one resistor and the first or second electrode of at least one capacitor.
Inventors
- 👤 George E Bodway
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 06:03
CPC Classifications
C; C25; C25D; C25D11/00; C25D11/02; C25D11/26; H; H10; H10N; H10N97/00
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
90 words
The method of claim 1 wherein: the step of forming the first electrode includes depositing conductive material including tantalum on the substrate; each of the steps of forming an insulating layer on a portion of the first electrode before and after the step of heating the structure includes forming an oxide of tantalum on said portion of the first electrode; and the step of forming a pattern of resistive material includes depositing a resistive compound of tantalum that has a resistivity which is stabilized by heating to an elevated temperature.
Claim 2
Dependent Claim
28 words
The method of claim 2 wherein the steps of forming an oxide of tantalum before and after the step of heating the structure are performed by anodizing tantalum.
Claim 3
Dependent Claim
91 words
The method of claim 1 wherein the step of forming a pattern of resistive material includes the steps of: depositing a layer of resistive compound of tantalum on the substrate; depositing a layer of metal including gold on said layer of resistive compound; etching away the excess portion of said layer of metal to form connection pads of said metal on the end terminals of said resistive element; and etching away the excess portion of said layer of resistive compound to form said pattern of resistive material between said connection pads.
Claim 4
Dependent Claim
89 words
The method of claim 4 wherein: the step of forming the first electrode comprises forming a tantalum electrode on the substrate; the step of depositing a layer of a resistive compound includes depositing tantalum nitride on the substrate in the region of said resistive element and on the first electrode and the oxidized portion thereof; and the step of etching away the excess portion of said layer of resistive material comprises etching away the tantalum nitride except in said pattern and on the uninsulated portion of the first electrode.
Claim 5
Dependent Claim
47 words
The method of claim 1 wherein the step of forming the second electrode and the interconnecting circuit is performed by providing conductive paths of a metal including gold in contact with the insulated portion of the first electrode and with an end terminal of the resistive element.
Claim 6
Dependent Claim
27 words
The method of claim 1 wherein the step of forming the pattern of resistive material includes electrically isolating the pattern of resistive material from the first electrode.
Claim 7
Independent Claim
104 words
A method of forming a capacitor and a resistor on the same insulating substrate, said method comprising in sequence the steps of: forming on the insulating substrate a first conductive electrode of the capacitor; forming on a portion of the first conductive electrode a dielectric layer of the capacitor; forming on the insulating substrate a resistive element and first and second conductive end terminals of the resistor; heating the structure to stabilize the resistive element; reforming on said portion of the first conductive electrode the dielectric layer of the capacitor; and forming on the reformed dielectric layer a second conductive electrode of the capacitor.
Claim 8
Dependent Claim
42 words
A method as in claim 8 wherein the step of forming the resistive element and first and second conductive end terminals of the resistor includes electrically isolating the resistive element and first and second conductive end terminals from the first conductive electrode.
Claim 9
Dependent Claim
222 words
A method as in claim 8 wherein the step of forming the first conductive electrode comprises the substeps of depositing a Layer of tantalum on the insulating substrate and etching away part of this layer of tantalum to form the first conductive electrode of the capacitor; the step of forming the dielectric layer comprises anodizing said portion of the first conductive electrode to form the dielectric layer of the capacitor; the step of forming the resistive element and first and second conductive end terminals comprises the substeps of depositing a layer of tantalum nitride on the insulating substrate, depositing a first layer of conductive metal on this layer of tantalum nitride, and etching away parts of these layers of tantalum nitride and conductive metal to form the resistive element and first and second conductive end terminals of the resistor and to expose the dielectric layer of the capacitor; the step of reforming the dielectric layer comprises reanodizing said portion of the first conductive electrode to reform the dielectric layer of the capacitor; and the step of forming the second conductive electrode comprises the substeps of depositing a second layer of conductive metal on the dielectric layer and other parts of the structure and etching away part of this second layer of conductive metal to form the second conductive electrode of the capacitor.
Claim 10
Dependent Claim
49 words
A method as in claim 10 wherein the substep of etching away parts of the layer of tantalum nitride and the first layer of conductive metal electrically isolates the resistive element and first and second conductive end terminals of the resistor from the first conductive electrode of the capacitor.
Claim 11
Dependent Claim
66 words
A method as in claim 11 wherein the substeps of depositing the second layer of conductive metal and etching away part of this second layer of conductive metal forms both the second conductive electrode of the capacitor and a conductive interconnection between one of the first and second conductive electrodes of the capacitor and one of the first and second conductive end terminals of the resistor.
Claim 12
Dependent Claim
46 words
A method as in claim 12 wherein: the substep of depositing the layer of tantalum comprises sputtering a layer of tantalum on the insulating substrate; and the substep of depositing the layer of tantalum nitride comprises sputtering a layer of tantalum nitride on the insulating substrate.
Claim 13
Dependent Claim
48 words
A method as in claim 13 wherein: the substep of depositing the first layer of conductive metal comprises depositing a layer of a metal including gold; and the substep of depositing the second layer of conductive metal comprises depositing a layer of a metal including chrome and gold.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-10-25 | 1975-04-26 | 1975-10-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-10-25 | 1979-04-26 | 1979-10-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-10-25 | 1983-04-26 | 1983-10-26 | $7700.00 | Window Closed / Lapsed |