US5039620A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a photoelectric conversion device with a high response speed
Assignee: Individual
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Filing: 1987-11-24
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Granted: 1991-08-13
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Expires: 2007-11-24
Abstract
Abstract An improved photoelectric conversion device is shown. The device includes a plurality of photoelectric semiconductor elements each of which are composed of a first electrode and a semiconductor layer and a second electrode. The opposed surfaces of semiconductor layer is completely covered by the first and second electrodes.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Toshimitsu Konuma
- 👤 Toshiji Hamatani
- 👤 Akira Mase
- 👤 Toshiharu Yamaguchi
- 👤 Mitsunori Sakama
- 👤 Takashi Inujima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:19
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F30/2235; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F77/00; H10F77/20; H10F77/206
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
79 words
A manufacturing method of a photoelectric conversion device comprising: a step of preparing a substrate; a step of forming a first electrode on said substrate; a step of forming a photoelectric semiconductor layer on said first electrode; a step of forming a second electrode on said semiconductor layer; a step of applying a reverse voltage across said semiconductor layer through said electrodes; and a step of severing said semiconductor and said electrodes into a plurality of photoelectric conversion elements.
Claim 2
Dependent Claim
79 words
A manufacturing method of a photoelectric conversion device comprising: a step of preparing a substrate; a step of forming a first electrode on said substrate; a step of forming a photoelectric semiconductor layer on said first electrode; a step of forming a second electrode on said semiconductor layer; a step of applying a reverse voltage across said semiconductor layer through said electrodes; and a step of severing said semiconductor and said electrodes into a plurality of photoelectric conversion elements.
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein said plurality of elements constitute the photo-sensitive portion of a linear image sensor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-12 | 1995-02-11 | 1995-08-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-12 | 1999-02-11 | 1999-08-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-12 | 2003-02-11 | 2003-08-13 | $7700.00 | Window Closed / Lapsed |