US3941672A
Expired / Lapsed
US
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Method of manufacturing light sensitive heterodiode
Assignee: Hitachi Ltd
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Filing: 1974-03-11
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Granted: 1976-03-02
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Expires: 1994-03-11
Abstract
Abstract A method of manufacturing a light sensitive heterodiode comprising an n-type transparent conductive layer and a p-type photoconductive layer provided thereon and forming rectifying contact therewith, in which before providing the p-type photoconductive layer on the n-type transparent conductive layer the surface of the latter is smoothed down by mechanical polishing or by bombarding it with ions accelerated by discharge.
Inventors
- 👤 Yasuo Tanaka
- 👤 Hideaki Yamamoto
- 👤 Keiko Ooki
- 👤 Naohiro Goto
- 👤 Toru Takigawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 19:21
CPC Classifications
H; H10; H10P; H10P95/00; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/456; H01J9/00; H01J9/20; H01J9/233; H10F; H10F99/00
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
104 words
A method of manufacturing a light sensitive element comprising forming an n-type transparent conductive layer on a transparent substrate, the surface of said n-type layer defining microprotrusions, and forming a p-type photoconductive layer on the n-type transparent conductive layer to form a rectifying contact therewith, said process characterized in that said n-type transparent layer is subjected to plasma etching to remove at least 100 A of said n-type transparent layer and thereby smooth said microprotrusions before the p-type photoconductive layer is deposited thereon and in that the p-type photoconductive layer is a layer of a material whose main component is a chalcogenide containing selenium.
Claim 2
Independent Claim
104 words
A method of manufacturing a light sensitive element comprising forming an n-type transparent conductive layer on a transparent substrate, the surface of said n-type layer defining microprotrusions, and forming a p-type photoconductive layer on the n-type transparent conductive layer to form a rectifying contact therewith, said process characterized in that said n-type transparent layer is subjected to plasma etching to remove at least 100 A of said n-type transparent layer and thereby smooth said microprotrusions before the p-type photoconductive layer is deposited thereon and in that the p-type photoconductive layer is a layer of a material whose main component is a chalcogenide containing selenium.
Claim 3
Dependent Claim
31 words
A method of manufacturing a light sensitive element according to claim 1, wherein at least 30% of the thickness of the n-type conductive layer is removed during the plasma etching step.
Claim 4
Dependent Claim
78 words
A method of manufacturing a light sensitive element according to claim 2, characterized in that the n-type transparent conductive layer is made of a material whose main component is selected from the group consisting of indium oxide, titanium oxide, tantalum oxide, thallium oxide, zinc oxide, and mixtures thereof and on which there is deposited after the plasma etching step a thin layer of a material selected from the group consisting of CdS, CdSe, ZnS, ZnSe, and mixtures thereof.
Claim 5
Dependent Claim
41 words
A method of manufacturing a light sensitive element according to claim 3, wherein said thin layer of material defines microprotrusions, said process further comprising smoothing the tips of said microprotrusions of said thin layer by plasma etching or by mechanical polishing.
Claim 6
Dependent Claim
47 words
A method of manufacturing a light sensitive element according to claim 2, characterized in that the main component of the material of the n-type transparent conductive layer is selected from the group consisting of indium oxide, titanium oxide, tantalum oxide, thallium oxide, zinc oxide, and mixtures thereof.
Claim 7
Dependent Claim
24 words
A method of manufacturing a light sensitive element according to claim 2, characterized in that said p-type photoconductive layer is in an amorphous state.
Claim 8
Dependent Claim
54 words
A method of manufacturing a light sensitive element according to claim 2, wherein said n-type transparent conductive layer comprises a polycrystal having a grain size of the order of from several hundred to several thousand A, said n-type transparent conductive layer being formed by vacuum evaporation, chemical vapour deposition, pyrolytic decomposition of rf sputtering.
Claim 9
Dependent Claim
59 words
A method of manufacturing a light sensitive element according to claim 2, wherein plasma-etching is performed by means of an inert gas selected from the group consisting of He, Ne, Ar, Kr and Xe under a pressure of about 1 × 10.sup. -2 to 1 × 10.sup. -1 Torr and an accelerating voltage of about 0.5 to 3 KV.
Claim 10
Dependent Claim
32 words
A method of manufacturing a light sensitive element according to claim 2, wherein said n-type transparent conductive layer has a thickness of about 1500 to 2000 A prior to the plasma-etching step.
Claim 11
Dependent Claim
23 words
A method of manufacturing a light sensitive element according to claim 1, wherein said n-type conductive layer is formed by rf sputtering deposition.
Claim 12
Dependent Claim
120 words
A process for manufacturing a light sensitive element, comprising (a) forming an n-type transparent conductive layer on a transparent substrate by means of vacuum evaporation, chemical vapor deposition, pyrolytic decomposition or rf sputtering, said n-type transparent conductive layer being formed of a polycrystal having a grain size of the order of from several hundred to several thousand A and a microscopically rough surface defined by a plurality of microprotrusions, (b) subjecting said n-type layer to plasma etching to remove at least 100 A of said n-type layer and thereby smooth the surface of said n-type layer, and thereafter (c) coating said n-type transparent conductive layer with a p-type photoconductive layer of a material whose main component is chalcogenide containing selenium.
Claim 13
Dependent Claim
120 words
A process for manufacturing a light sensitive element, comprising (a) forming an n-type transparent conductive layer on a transparent substrate by means of vacuum evaporation, chemical vapor deposition, pyrolytic decomposition or rf sputtering, said n-type transparent conductive layer being formed of a polycrystal having a grain size of the order of from several hundred to several thousand A and a microscopically rough surface defined by a plurality of microprotrusions, (b) subjecting said n-type layer to plasma etching to remove at least 100 A of said n-type layer and thereby smooth the surface of said n-type layer, and thereafter (c) coating said n-type transparent conductive layer with a p-type photoconductive layer of a material whose main component is chalcogenide containing selenium.
Claim 14
Dependent Claim
39 words
The process of claim 11, wherein said n-type transparent conductive layer is formed from at least one member selected from the group consisting of tin oxide, titanium oxide, indium oxide, tantalum oxide, thallium oxide, zinc oxide and mixtures thereof.
Claim 15
Dependent Claim
23 words
The process of claim 12 further comprising overlaying on the smoothed surface of said n-type transparent conductive layer an n-type conductivity chalcogenide layer.
Claim 16
Dependent Claim
29 words
The process of claim 13 further comprising smoothing the surface of the n-type conductivity chalcogenide layer before said p-type layer is applied thereto by plasma etching or mechanical polishing.
Claim 17
Dependent Claim
29 words
The process of claim 13, wherein said n-type conductivity chalcogenide layer is formed from at least one member selected from the group consisting of CdS, CdSe, ZnS and ZnSe.
Claim 18
Dependent Claim
13 words
The process of claim 12, wherein said p-type layer includes tellurium and arsenic.
Claim 19
Dependent Claim
47 words
The process of claim 11, wherein plasma-etching is performed by means of an inert gas selected from the group consisting of He, Ne, Ar, Kr and Xe under a pressure of about 1 × 10.sup. -1 Torr and an accelerating voltage of about 0.5 to 3 KV.
Claim 20
Dependent Claim
24 words
The process of claim 11, wherein said n-type transparent conductive layer has a thickness of about 1500 to 2000 A prior to the plasma-etching.
Claim 21
Dependent Claim
20 words
The process of claim 11, wherein about 500 to 1000 A of said n-type layer is removed by plasma etching.
Claim 22
Dependent Claim
13 words
The process of claim 11, wherein said p-type layer includes tellurium and arsenic.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-03-02 | 1979-09-01 | 1980-03-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-03-02 | 1983-09-01 | 1984-03-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-03-02 | 1987-09-01 | 1988-03-02 | $7700.00 | Window Closed / Lapsed |