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US3770606A Expired / Lapsed US ⏱️ 0.0 years remaining

Schottky barrier diodes as impedance elements and method of making same

Assignee: AT&T Inc
•
Filing: 1970-11-17
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Granted: 1973-11-06
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Expires: 1990-11-17
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Abstract

Abstract The reverse characteristic of Schottky barrier diodes provides easily fabricated, small area, high impedance elements for micropower circuits. Advantageously, the diodes are fabricated within semiconductive integrated circuit arrays by forming rhodium silicide on relatively high resistivity P-type silicon. Such diodes are particularly useful in the loads of flip-flops used as cells of a semiconductor memory.

Inventors

  • 👤 M Lepselter

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-22 19:45
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/26; H03K3/28; H03K3/281; H03K3/286; G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/411; G11C11/4113; H03K3/01; H03K3/012; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/617; H10D99/00; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/085; Y10S148/139

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 31 words
A method as recited in claim 1 wherein the material for the uniform layer is selected from the group consisting of rhodium, platinum, palladium, zirconium, and the alloys of these metals.
Claim 2
Dependent Claim 21 words
A method as recited in claim 2 wherein said metal is rhodium and said elevated temperature is between 450* and 750*C.

References Cited (Backward Citations)

US3290127A Cited
US3616401A Cited
US3451912A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-11-05 1977-05-07 1977-11-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-11-05 1981-05-07 1981-11-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-11-05 1985-05-07 1985-11-06 $7700.00 Window Closed / Lapsed

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