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US5039358A
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Amorphous, hydrogenated carbon electroactive passivation layer
Assignee: Siemens AG
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Filing: 1990-02-01
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Granted: 1991-08-13
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Expires: 2010-02-01
Abstract
Abstract The invention provides electroactive passivation layers for semiconductor components comprising a thin layer of amorphous, hydrogenated carbon.
Inventors
- 👤 Siegfried Birkle
- 👤 Johann Kammermaier
- 👤 Gerhard Schmidt
- 👤 Albrecht Winnacker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:51
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/01; Y; Y10; Y10S; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
46 words
An electroactive passivation layer for semiconductor components comprising a thin layer of amorphous, hydrogenated carbon (a-C:H) having a defect concentration of approximately 10 19 cm -3 .eV -1 , a specific electrical resistance of >10 8 Ω.cm, and an optical mobility gap of approximately 1.1 eV.
Claim 2
Dependent Claim
46 words
An electroactive passivation layer for semiconductor components comprising a thin layer of amorphous, hydrogenated carbon (a-C:H) having a defect concentration of approximately 10 19 cm -3 .eV -1 , a specific electrical resistance of >10 8 Ω.cm, and an optical mobility gap of approximately 1.1 eV.
Claim 3
Dependent Claim
21 words
The passivation layer according to claim 1 wherein said layer has a thickness of about 0.05 μm to about 3 μm.
Claim 4
Independent Claim
72 words
A method for manufacturing an electroactive passivation layer for semiconductor components comprising the step of applying a thin layer of amorphous, hydrogenated carbon to a substrate by means of a high-frequency, low-pressure plasma deposition of at least one gaseous hydrocarbon, said layer having a defect concentration of approximately 10 19 cm -3 .eV -1 , a specific electrical resistance of >10 8 Ω.cm, and an optical mobility gap of approximately 1.1 eV.
Claim 5
Independent Claim
72 words
A method for manufacturing an electroactive passivation layer for semiconductor components comprising the step of applying a thin layer of amorphous, hydrogenated carbon to a substrate by means of a high-frequency, low-pressure plasma deposition of at least one gaseous hydrocarbon, said layer having a defect concentration of approximately 10 19 cm -3 .eV -1 , a specific electrical resistance of >10 8 Ω.cm, and an optical mobility gap of approximately 1.1 eV.
Claim 6
Dependent Claim
17 words
The method according to claim 3 wherein the plasma deposition is accomplished by means of radio frequency.
Claim 7
Dependent Claim
14 words
The method according to claim 3 wherein an alkane is used as gaseous hydrocarbon.
Claim 8
Dependent Claim
13 words
The method according to claim 5 wherein methane is used as gaseous hydrocarbon.
Claim 9
Dependent Claim
20 words
The method according to claim 3 wherein the substrate is maintained at a temperature of ≧250° during the deposition process.
Claim 10
Dependent Claim
14 words
The method according to claim 4 wherein an alkane is used as gaseous hydrocarbon.
Claim 11
Dependent Claim
21 words
The method according to claim 4 wherein the substrate is maintained at a temperature of ≧250° C. during the deposition process.
Claim 12
Dependent Claim
21 words
The method according to claim 5 wherein the substrate is maintained at a temperature of ≧250° C. during the deposition process.
Claim 13
Dependent Claim
20 words
The method according to claim 3 wherein said layer has a thickness of about 0.05 μm to about 3 μm.
Claim 14
Dependent Claim
20 words
The method according to claim 4 wherein said layer has a thickness of about 0.05 μm to about 3 μm.
Claim 15
Dependent Claim
20 words
The method according to claim 5 wherein said layer has a thickness of about 0.05 μm to about 3 μm.
Claim 16
Dependent Claim
20 words
The method according to claim 7 wherein said layer has a thickness of about 0.05 μm to about 3 μm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-12 | 1995-02-11 | 1995-08-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-12 | 1999-02-11 | 1999-08-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-12 | 2003-02-11 | 2003-08-13 | $7700.00 | Window Closed / Lapsed |