Patent US2201736A successfully refreshed from Google Patents.
US4742384A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Structure for passivating a PN junction
Assignee: RCA Corp
•
Filing: 1983-03-18
•
Granted: 1988-05-03
•
Expires: 2003-03-18
Abstract
Abstract A technique for passivating a PN junction adjacent a surface of a semiconductor substrate comprises coating the area of the surface adjacent the PN junction with a layer of hydrogenated amorphous silicon containing between about 5 and about 50 atomic percent of hydrogen.
Inventors
- 👤 Jacques I. Pankove
- 👤 Ming L. Tarng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 14:03
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/481; H10P; H10P14/00; H10P14/60
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
47 words
In a crystalline semiconductor structure having a PN junction adjacent a surface thereof, the improvement comprising a layer of hydrogenated amorphous silicon disposed on said surface adjacent the PN junction, said hydrogenated layer of amorphous silicon containing between about 5 and about 50 atomic percent of hydrogen.
Claim 2
Dependent Claim
47 words
In a crystalline semiconductor structure having a PN junction adjacent a surface thereof, the improvement comprising a layer of hydrogenated amorphous silicon disposed on said surface adjacent the PN junction, said hydrogenated layer of amorphous silicon containing between about 5 and about 50 atomic percent of hydrogen.
Claim 3
Dependent Claim
25 words
A semiconductor structure as recited in claim 1 wherein said hydrogenated amorphous silicon layer is produced by a glow discharge in silane (SiH 4 ).
Claim 4
Dependent Claim
24 words
A semiconductor structure as recited in claim 1 wherein said layer of hydrogenated amorphous silicon has a thickness between about 0.01μm and about 1μm.
Claim 5
Dependent Claim
45 words
A semiconductor structure as recited in claim 1 wherein said semiconductor structure is silicon and wherein said layer of hydrogenated amorphous silicon comprises one or more of the silicon hydride phases selected from the group consisting of Si:H, Si:H 2 , and Si:H 3 .
References Cited (Backward Citations)
US3743847A
Cited
US3806361A
Cited
US3971061A
Cited
US4001873A
Cited
US4084986A
Cited
US4064521A
Cited
US4109271A
Cited
US4113514A
Cited
US4362766A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-03 | 1991-11-02 | 1992-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-03 | 1995-11-02 | 1996-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-03 | 1999-11-02 | 2000-05-03 | $7700.00 | Window Closed / Lapsed |