Method of making a semiconductor device including via holes

Claim 1

A method of making a semiconductor device comprising: forming a plurality of semiconductor elements in a semiconductor substrate at a first surface of said substrate; forming electrodes contacting said semiconductor elements on said first surface of said semiconductor substrate; forming a plurality of relatively small recesses by etching a second surface of said substrate opposite said first surface at locations opposite selected ones of said electrodes; removing by etching the material of said substrate in and around said small recesses to form a single, relatively large recess encompassing said small recesses including a third surface intermediate said first and second surfaces and, at the same time, further etching in said plurality of small recesses to extend the small recesses through said substrate to form through-holes which extend from said third surface in said large recess to said selected ones of said electrodes; and coating said larger recess, the inner surfaces of said through-holes, and said second and third surfaces of said semiconductor substrate with a continuous metallic layer.

Claim 2

A method of making a semiconductor device comprising: forming a plurality of semiconductor elements in a semiconductor substrate at a first surface of said substrate; forming electrodes contacting said semiconductor elements on said first surface of said semiconductor substrate; forming a plurality of relatively small recesses by etching a second surface of said substrate opposite said first surface at locations opposite selected ones of said electrodes; removing by etching the material of said substrate in and around said small recesses to form a single, relatively large recess encompassing said small recesses including a third surface intermediate said first and second surfaces and, at the same time, further etching in said plurality of small recesses to extend the small recesses through said substrate to form through-holes which extend from said third surface in said large recess to said selected ones of said electrodes; and coating said larger recess, the inner surfaces of said through-holes, and said second and third surfaces of said semiconductor substrate with a continuous metallic layer.

Claim 4

A method of making a semiconductor device comprising: forming a plurality of semiconductor elements in a semiconductor substrate at a first surface of said substrate; forming electrodes contacting said semiconductor elements on said first surface of said semiconductor substrate; forming a plurality of relatively small recesses in a second surface of said substrate opposite said first surface at locations opposite selected ones of said electrodes; removing the material of said substrate in and around said small recesses to form a single, relatively large recess encompassing said small recesses including a third surface intermediate said first and second surfaces and, at the same time, further removing material in said plurality of small recesses to extend the small recesses through said substrate to form through-holes which extend from said third surface in said large recess to said selected ones of said electrodes; and coating said large recess, the inner surfaces of said through-holes, and said second and third surfaces of said semiconductor substrate with a continuous metallic layer.

Claim 5

A method of making a semiconductor device comprising: forming a plurality of semiconductor elements in a semiconductor substrate at a first surface of said substrate; forming electrodes contacting said semiconductor elements on said first surface of said semiconductor substrate; forming a plurality of relatively small recesses in a second surface of said substrate opposite said first surface at locations opposite selected ones of said electrodes; removing the material of said substrate in and around said small recesses to form a single, relatively large recess encompassing said small recesses including a third surface intermediate said first and second surfaces and, at the same time, further removing material in said plurality of small recesses to extend the small recesses through said substrate to form through-holes which extend from said third surface in said large recess to said selected ones of said electrodes; and coating said large recess, the inner surfaces of said through-holes, and said second and third surfaces of said semiconductor substrate with a continuous metallic layer.