US4751562A
Expired / Lapsed
US
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Field-effect semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1987-09-30
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Granted: 1988-06-14
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Expires: 2007-09-30
Abstract
Abstract A field-effect semiconductor device including a through-hole electrode formed so as to penetrate from the top to the bottom of the semiconductor substrate, a dielectric film formed on the semiconductor substrate so as to be opposite to the through-hole electrode, and an electrode, forming a through-hole type of passive element, such as a capacitor, so as to improve the integration degree.
Inventors
- 👤 Shigeyuki Yamamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 14:17
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/021; H10W20/023; H10D; H10D30/00; H10D30/80; H10D88/00; H10W20/0234; H10W20/0242; H10W20/20; H10W44/00; H10W44/601
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
208 words
A field-effect semiconductor device including a capacitor having electrodes, comprising: a semiconductor substrate having a bottom-surface and a top-surface, said semiconductor substrate being etched at a first rate and having a through-hole formed therein; a first through-hole electrode selectively formed in said through-hole in said semiconductor substrate so as to penetrate from the bottom-surface to the top-surface of said semiconductor substrate and directly contacting the top-surface of said semiconductor substrate, said first through-hole electrode providing a substantially flat surface co-planar with said top-surface of said substrate; a dielectric film having a first surface formed directly on said first through-hole electrode and formed from a material different from the semiconductor substrate, said dielectric film being etched at a second rate different from said first rate when the same etchant is employed, said first surface being a stoppage surface for stopping the etching of said semiconductor substrate; a first electrode of a field-effect transistor, said first electrode extending onto said dielectric film and contacting said dielectric film and the top-surface of said semiconductor substrate; and a bottom-surface electrode formed on the bottom-surface of said semiconductor substrate, said bottom-surface electrode together with said first through-hole electrode forming a single electrode, said single electrode being one of the electrodes of the capacitor.
Claim 2
Dependent Claim
208 words
A field-effect semiconductor device including a capacitor having electrodes, comprising: a semiconductor substrate having a bottom-surface and a top-surface, said semiconductor substrate being etched at a first rate and having a through-hole formed therein; a first through-hole electrode selectively formed in said through-hole in said semiconductor substrate so as to penetrate from the bottom-surface to the top-surface of said semiconductor substrate and directly contacting the top-surface of said semiconductor substrate, said first through-hole electrode providing a substantially flat surface co-planar with said top-surface of said substrate; a dielectric film having a first surface formed directly on said first through-hole electrode and formed from a material different from the semiconductor substrate, said dielectric film being etched at a second rate different from said first rate when the same etchant is employed, said first surface being a stoppage surface for stopping the etching of said semiconductor substrate; a first electrode of a field-effect transistor, said first electrode extending onto said dielectric film and contacting said dielectric film and the top-surface of said semiconductor substrate; and a bottom-surface electrode formed on the bottom-surface of said semiconductor substrate, said bottom-surface electrode together with said first through-hole electrode forming a single electrode, said single electrode being one of the electrodes of the capacitor.
Claim 3
Dependent Claim
33 words
A field-effect semiconductor device as set forth in claim 1, wherein said first electrode of said field-effect transistor is one selected from among a source electrode, a gate electrode, and a drain electrode.
Claim 4
Dependent Claim
25 words
A field-effect semiconductor device as set forth in claim 2, wherein said first electrode, said dielectric film, and said first through-hole electrode form the capacitor.
Claim 5
Dependent Claim
22 words
A field-effect semiconductor device as set forth in claim 3, wherein said first electrode is said source electrode of said field-effect transistor.
Claim 6
Dependent Claim
16 words
A field-effect semiconductor device as set forth in claim 4, wherein said bottom-surface electrode is grounded.
Claim 7
Dependent Claim
69 words
A field-effect semiconductor device as set forth in caim 4, further comprising: a second through-hole electrode formed in said semiconductor substrate so as to penetrate from the bottom surface to the top surface of said semiconductor substrate, said second through-hole electrode together with said bottom-surface electrode forming a single electrode; and a second electrode formed on the top surface of said semiconductor substrate and contacting said second through-hole electrode.
Claim 8
Dependent Claim
69 words
A field-effect semiconductor device as set forth in caim 4, further comprising: a second through-hole electrode formed in said semiconductor substrate so as to penetrate from the bottom surface to the top surface of said semiconductor substrate, said second through-hole electrode together with said bottom-surface electrode forming a single electrode; and a second electrode formed on the top surface of said semiconductor substrate and contacting said second through-hole electrode.
Claim 9
Dependent Claim
56 words
A field-effect semiconductor device as set forth in claim 6, further comprising a resistive film formed on said semiconductor substrate between said first electrode and said second electrode, said resistive film formed from a semiconductor material having a second etching rate, the second etching rate being different from the first etching rate of said semiconductor substrate.
Claim 10
Dependent Claim
108 words
A field-effect semiconductor device as set forth in claim 1, wherein said first electrode is a gate electrode of said field-effect transistor, said field-effect semiconductor device further comprising: a source electrode of said field-effect transistor, formed on said semiconductor substrate; a second through-hole formed under said source electrode and in said semiconductor substrate so as to penetrate from the bottom surface to the top surface of said semiconductor substrate; a second through-hole electrode formed in said second through-hole, said second through-hole electrode together with said bottom-surface electrode forming a single electrode; and a conductive layer formed on said semiconductor substrate between said gate electrode and said dielectric film.
Claim 11
Dependent Claim
17 words
A field-effect semiconductor device as set forth in claim 8, wherein said conductive layer comprises an inductor.
Claim 12
Dependent Claim
17 words
A field-effect semiconductor device as set forth in claim 9, wherein said device comprises a matching circuit.
Claim 13
Dependent Claim
29 words
A field-effect semiconductor device as set forth in claim 7, wherein said resistive film is of a semiconductor material doped with impurity ions so as to form a resistor.
Claim 14
Dependent Claim
188 words
An integrated circuit device including a field-effect transistor having an electrode and at least one capacitor, said capacitor comprising: a semiconductor substrate having a bottom-surface and a top-surface, said semiconductor substrate being etched at a first rate and having a through-hole formed therein; a through-hole electrode selectively formed in said through-hole in said semiconductor substrate extending from the bottom-surface to the top-surface of said semiconductor substrate and directly contacting the top-surface of said semiconductor substrate, said through-hole electrode providing a substantially flat surface co-planar with said top-surface of said substrate; a dielectric film formed directly on the surface of said through-hole electrode, and formed from a material different from that of said semiconductor substrate, said dielectric film being etched at a second rate, different from said first rate, when the same etchant is employed, said dielectric film stopping the etching of said semiconductor substrate; the electrode of the field-effect transistor contacting said dielectric film and the top-surface of said semiconductor substrate; and a bottom-surface electrode formed on said bottom-surface of said semiconductor substrate, said bottom-surface electrode together with said through-hole electrode forming a single electrode for the capacitor.
Claim 15
Dependent Claim
188 words
An integrated circuit device including a field-effect transistor having an electrode and at least one capacitor, said capacitor comprising: a semiconductor substrate having a bottom-surface and a top-surface, said semiconductor substrate being etched at a first rate and having a through-hole formed therein; a through-hole electrode selectively formed in said through-hole in said semiconductor substrate extending from the bottom-surface to the top-surface of said semiconductor substrate and directly contacting the top-surface of said semiconductor substrate, said through-hole electrode providing a substantially flat surface co-planar with said top-surface of said substrate; a dielectric film formed directly on the surface of said through-hole electrode, and formed from a material different from that of said semiconductor substrate, said dielectric film being etched at a second rate, different from said first rate, when the same etchant is employed, said dielectric film stopping the etching of said semiconductor substrate; the electrode of the field-effect transistor contacting said dielectric film and the top-surface of said semiconductor substrate; and a bottom-surface electrode formed on said bottom-surface of said semiconductor substrate, said bottom-surface electrode together with said through-hole electrode forming a single electrode for the capacitor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-14 | 1991-12-14 | 1992-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-14 | 1995-12-14 | 1996-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-14 | 1999-12-14 | 2000-06-14 | $7700.00 | Window Closed / Lapsed |