Field-effect semiconductor device

Abstract

Abstract PURPOSE:To prevent a ground metal cavity from developing inside of a viahole by causing a sectional form of the viahole to have a through width of a rear electrode side which is wider than that of a source electrode side; besides, to have a stepped form. CONSTITUTION:After gate electrodes 2 are formed on an active layer of the surface of a GaAs substrate 1 and further, source and drain electrodes 3 and 4 are formed, thereby alternately arranging the above electrodes between the gate electrodes 2, the substrate 1 is shaped to be thin. And a resist pattern 5 is formed at the rear of the substrate facing the electrode 3. And then, a ditch is made at the substrate 1 by causing a pattern 5 to act as a mask. Subsequently, the substrate 1 is etched so that a vertical section is obtained up to the source electrode 3 through a reactive ion-etching process. And after the pattern 5 is removed, Ti is deposited as a current path of an electrolyte plating. And then, the electrolytic plating process treats Au 8 by plating.

Inventors

• 👤 Shunji Nakao
• 👤 中尾　俊二

Bibliographic Details