Compression bonded semiconductor device having a plurality of stacked hermetically sealed circuit assemblies

Claim 2

A compression bonded semiconductor device comprising: at least one hermetically sealed compression bonded circuit assembly disposed in a stack; each hermetically sealed compression bonded circuit assembly including a hermetically sealed chamber containing at least two compression bonded circuit elements with the chamber having first and second opposed walls, and a heat sink having first and second opposed surfaces, the first wall being parallel to and in thermal contact with the first surface of the heat sink, the individual compression bonded circuit elements of each circuit assembly being disposed in a different column in the stack; each circuit assembly within the stack being suspended by inelastically deformed springs individually disposed within each of the columns disposed outside the hermetically sealed chamber facing the second wall with a thickness of the columns measured between the deformed springs and one of the walls prior to compression bonding being substantially identical; means applying a force to the columns through the second wall of one of the at least one circuit assemblies of the stack and through the first wall of one of the at least one circuit assemblies of the stack to compression bond the circuit elements located in the column; and the first and second walls of each of the circuit assemblies have at least one separate corrugation which encircles and is coaxial with each of the columns to permit a portion of the walls within the columns to flex in any direction without transmitting torque or loads from one of the compression bonded circuit elements to any other of the compression bonded circuit elements which affects pressure applied to the any other of the compression bonded circuit elements to an extent to vary pressure applied to the any other compression bonded circuit elements outside a desired pressure range of operation.

Claim 3

A compression bonded semiconductor device in accordance with claim 1 wherein prior to application of the force: a surface of each of the deformed springs of each circuit assembly facing away from the second wall of the chamber lies in a single plane; and the second surface of the heat sink associated with each circuit assembly is parallel to the single plane.

Claim 4

A compression bonded semiconductor device in accordance with claim 4 wherein: the first and second walls of each of the circuit assemblies have at least one corrugation which encircles and is coaxial with each of the columns to permit a portion of the walls within the columns to flex in any direction without transmitting torque or cantilevered loads from one of the compression bonded circuit elements to any other of the compression bonded circuit elements which affects pressure applied to the any other of the compression bonded circuit elements to an extent to vary pressure applied to the any other compression bonded circuit elements outside a desired pressure range of operation.

Claim 5

A compression bonded semiconductor device in accordance with claim 3 wherein: each circuit assembly has an opening through which at least one circuit connection extends, at least one corrugation being within each circuit bus between the circuit connection and a point of electrical contact with a compression bonded circuit element and at least one corrugation within each of the at least one circuit buses between any compression bonded circuit elements which are in electrical contact with the at least one circuit bus.

Claim 6

A compression bonded semiconductor device in accordance with claim 4 wherein for each circuit assembly: a control circuit is disposed inside the chamber having circuit control elements for controlling the at least two compression bonded circuit elements disposed in the chamber; and the control circuit has at least one contact connected to a circuit bus.

Claim 7

A compression bonded semiconductor device in accordance with claim 5 wherein for each circuit assembly: at least two circuit buses are contained in the chamber; and portions of one circuit bus overlie another circuit bus within the chamber.

Claim 8

A compression bonded semiconductor device in accordance with claim 1 wherein: the first and second walls of each of the circuit assemblies have at least one corrugation which encircles and is coaxial with each of the columns to permit a portion of the walls within the columns to flex in any direction without transmitting torque or loads from one of the compression bonded circuit elements to any other of the compression bonded circuit elements which affects pressure applied to the any other of the compression bonded circuit elements to an extent to vary pressure applied to the any other compression bonded circuit elements outside a desired pressure range of operation.

Claim 9

A compression bonded semiconductor bus in accordance with claim 7 wherein: at least one circuit bus is disposed in each circuit assembly, each circuit bus having first and second opposed surfaces which are substantially parallel to each other and to the first and second walls of the circuit assembly in which the circuit bus is contained, the at least one circuit bus having at least one corrugation therein.

Claim 10

A compression bonded semiconductor device in accordance with claim 8 wherein: each circuit assembly has an opening through which at least one circuit connection extends, at least one corrugation being within each circuit bus between the circuit connection and a point of electrical contact with an adjacent compression bonded circuit element and at least one corrugation being within each of the at least one circuit buses between any adjacent compression bonded circuit elements which are in electrical contact with the at least one circuit bus.

Claim 11

A compression bonded semiconductor device in accordance with claim 9 further comprising for each circuit assembly: a control circuit disposed inside the chamber having circuit control elements for controlling the at least two compression bonded circuit elements disposed in the chamber; and the control circuit has at least one contact with each contact connected to a circuit bus.

Claim 12

A compression bonded semiconductor device in accordance with claim 10 wherein for each circuit assembly: at least two circuit buses are contained in the chamber; and portions of one circuit bus overlie another circuit bus within the chamber.

Claim 13

A compression bonded semiconductor device in accordance with claim 1 further comprising: at least one circuit bus is disposed in each circuit assembly, each circuit bus having first and second opposed surfaces which are substantially parallel to each other and to the first and second walls of the circuit assembly in which the circuit bus is contained, the at least one circuit bus having at least one corrugation therein.

Claim 14

A compression bonded semiconductor device in accordance with claim 12 wherein: each circuit assembly has an opening through which at least one circuit connection extends, at least one corrugation being within each circuit bus between the circuit connection and a point of electrical contact with a compression bonded circuit element and at least one corrugation being within each of the at least one circuit buses between any compression bonded circuit elements which are in electrical contact with the at least one circuit bus.

Claim 15

A compression bonded semiconductor device in accordance with claim 13 further comprising for each circuit assembly: a control circuit disposed inside the chamber having circuit control elements for controlling the at least two compression bonded circuit elements disposed in the chamber; and wherein the control circuit has at least one contact connected to a circuit bus.

Claim 16

A compression bonded semiconductor device in accordance with claim 14 wherein for each circuit assembly: at least two circuit buses are contained in the chamber; and portions of one circuit bus overlie another circuit bus within the chamber.

Claim 17

A compression bonded semiconductor device in accordance with claim 1 wherein: each column of the at least one hermetically sealed compression bonded circuit assembly contains a compression bonded circuit element.

Claim 18

A compression bonded semiconductor device having at least one hermetically sealed compression bonded circuit assembly disposed in a stack with means applying a force to the stack through a lid of one of the at least one circuit assemblies and through a pan of one of the at least one circuit assemblies to compression bond circuit elements within a hermetically sealed chamber of each of the circuit assemblies with each circuit assembly comprising: a metallic pan having a plurality of circular corrugations which are respectively located at positions where columns are located within the stack of the at least one circuit assembly; a compression bonded circuit element disposed in a plurality of the columns inside the hermetically sealed compression bonded circuit assembly with a side of at least one of the compression bonded circuit elements being electrically connected to the metallic pan; a plurality of circuit connections extending into the hermetically sealed circuit assembly; a plurality of circuit buses with a side of each compression bonded circuit element being electrically connected to one of the circuit buses which is connected to one of the circuit connections; the lid being joined to the pan to form the hermetically sealed chamber containing the compression bonded circuit elements, circuit buses and an insulator disposed between the lid and circuit buses, the lid having a plurality of circular corrugations respectively opposed in position to and in axial alignment with the circular corrugations of the pan and being contained in the columns of compression bonded circuit elements; and a plurality of inelastically deformed springs, equal in number to a number of columns in each of the circuit assemblies, with each spring being respectively located outside the hermetically sealed chamber in a different column facing a different corrugation of the lid in the stack of the at least one circuit assembly with a thickness of the columns measured between the deformed springs within the columns and a surface of the assembly prior to compression bonding being substantially identical.

Claim 19

A compression bonded semiconductor device having at least one hermetically sealed compression bonded circuit assembly disposed in a stack with means applying a force to the stack through a lid of one of the at least one circuit assemblies and through a pan of one of the at least one circuit assemblies to compression bond circuit elements within a hermetically sealed chamber of each of the circuit assemblies with each circuit assembly comprising: a metallic pan having a plurality of circular corrugations which are respectively located at positions where columns are located within the stack of the at least one circuit assembly; a compression bonded circuit element disposed in a plurality of the columns inside the hermetically sealed compression bonded circuit assembly with a side of at least one of the compression bonded circuit elements being electrically connected to the metallic pan; a plurality of circuit connections extending into the hermetically sealed circuit assembly; a plurality of circuit buses with a side of each compression bonded circuit element being electrically connected to one of the circuit buses which is connected to one of the circuit connections; the lid being joined to the pan to form the hermetically sealed chamber containing the compression bonded circuit elements, circuit buses and an insulator disposed between the lid and circuit buses, the lid having a plurality of circular corrugations respectively opposed in position to and in axial alignment with the circular corrugations of the pan and being contained in the columns of compression bonded circuit elements; and a plurality of inelastically deformed springs, equal in number to a number of columns in each of the circuit assemblies, with each spring being respectively located outside the hermetically sealed chamber in a different column facing a different corrugation of the lid in the stack of the at least one circuit assembly with a thickness of the columns measured between the deformed springs within the columns and a surface of the assembly prior to compression bonding being substantially identical.

Claim 20

A compression bonded semiconductor device in accordance with claim 17 wherein each circuit assembly further comprises: a heat sink having a first surface in surface and thermal contact with an outside surface of the pan and an opposed second surface facing an outside surface of the lid of an adjacent circuit assembly in the stack except for a bottom circuit assembly in the stack.

Claim 21

A compression bonded semiconductor device in accordance with claim 25 wherein each circuit assembly further comprises: a separate load washer located in each of the columns, each load washer having a first surface in surface contact with a top surface of a spring within the column facing away from the lid; and an insulator in surface contact with a second surface of each of the load washers which is opposed to the first surface.

Claim 22

A compression bonded semiconductor device in accordance with claim 18 wherein in each circuit assembly: the plurality of columns each have a thickness measured between the deformed spring within the column and the pan which is substantially identical.

Claim 23

A compression bonded semiconductor device in accordance with claim 20 wherein in each circuit assembly prior to application of the force by the means for applying the force: a surface of each of the springs facing away from the lid is in a single plane; and the second surface of the heat sink associated with each circuit assembly is parallel to the surface facing away from the lid prior to application of the force by the means for applying the force.

Claim 24

A compression bonded semiconductor device in accordance with claim 17 wherein: each column of the at least one hermetically sealed compression bonded circuit assemblies contains a compression bonded circuit element.

Claim 25

A compression bonded semiconductor device comprising: at least one hermetically sealed compression bonded circuit assembly disposed in a stack; each hermetically sealed compression bonded circuit assembly having a hermetically sealed chamber containing at least two compression bonded circuit elements with the chamber having first and second opposed walls, and a heat sink having first and second opposed surfaces with the first wall being parallel to and in thermal contact with the first surface of the heat sink, the individual compression bonded circuit elements of each circuit assembly each being disposed in a different column in the stack; each circuit assembly within the stack being suspended in the stack by inelastically deformed shims individually disposed within each of the columns disposed outside the hermetically sealed chamber facing the second wall with a thickness of the columns measured between the deformed shims and one of the walls prior to compression bonding being substantially identical; and means applying a force to the columns through the second wall of one of the at least one circuit assemblies of the stack and through the first wall of one of the at least one circuit assemblies of the stack to compression bond the circuit elements located in the columns.

Claim 26

A compression bonded semiconductor device comprising: at least one hermetically sealed compression bonded circuit assembly disposed in a stack; each hermetically sealed compression bonded circuit assembly having a hermetically sealed chamber containing at least two compression bonded circuit elements with the chamber having first and second opposed walls, and a heat sink having first and second opposed surfaces with the first wall being parallel to and in thermal contact with the first surface of the heat sink, the individual compression bonded circuit elements of each circuit assembly each being disposed in a different column in the stack; each circuit assembly within the stack being suspended in the stack by inelastically deformed shims individually disposed within each of the columns disposed outside the hermetically sealed chamber facing the second wall with a thickness of the columns measured between the deformed shims and one of the walls prior to compression bonding being substantially identical; and means applying a force to the columns through the second wall of one of the at least one circuit assemblies of the stack and through the first wall of one of the at least one circuit assemblies of the stack to compression bond the circuit elements located in the columns.

Claim 27

A compression bonded semiconductor device in accordance with claim 23 wherein for each circuit assembly: a surface of each of the deformed shims facing away from the second wall lies in a single plane; and the second surface of the heat sink is parallel to the single plane.

Claim 28

A compression bonded semiconductor device in accordance with claim 24 wherein: the first and second walls of each of the circuit assemblies have at least one corrugation which encircles and is coaxial with each of the columns to permit a portion of the walls within the columns to flex in any direction without transmitting torque or loads from one of the compression bonded circuit elements to any other of the compression bonded circuit elements which affects pressure applied to the any other of the compression bonded circuit elements to an extend to vary pressure applied to the any other compression bonded circuit elements outside a desired pressure range of operation.

Claim 29

A compression bonded semiconductor device in accordance with claim 25 further comprising for each circuit assembly: at least one circuit bus, each circuit bus having first and second opposed surfaces which are substantially parallel to each other and to the first and second walls of the circuit assembly in which the circuit bus is contained, the at least one circuit bus having at least one corrugation therein.

Claim 30

A compression bonded semiconductor device in accordance with claim 26 further comprising for each circuit assembly: an opening through which at least one circuit connection extends, at least one corrugation being within each circuit bus between the circuit connection and a point of electrical contact with a compression bonded circuit element and at least one corrugation being within each of the at least one circuit buses between any compression bonded circuit elements which are in electrical contact with the at least one circuit bus.

Claim 31

A compression bonded semiconductor device in accordance with claim 27 wherein in each circuit assembly: a control circuit is disposed inside the chamber having circuit control elements for controlling the at least one compression bonded circuit elements disposed in the chamber; and the control circuit has at least one contact with each contact being connected to a different circuit bus.

Claim 32

A compression bonded semiconductor device in accordance with claim 28 wherein for each circuit assembly: at least two circuit buses are contained in the chamber; and portions of one circuit bus overlie another circuit bus within the chamber.

Claim 33

A compression bonded semiconductor device in accordance with claim 25 wherein for each circuit assembly: an opening is provided through which at least one circuit connection extends, at least one corrugation being within each circuit bus between the circuit connection and a point of electrical contact with a compression bonded circuit element and at least one corrugation being within each of the at least one circuit buses between any compression bonded circuit elements which are in electrical contact with the at least one circuit bus.

Claim 34

A compression bonded semiconductor device in accordance with claim 30 wherein for each circuit assembly: a control circuit is disposed inside the chamber having circuit control elements for controlling the at least two compression bonded circuit elements disposed in the chamber; and the control circuit has at least one contact with each contact being connected to a different circuit bus.

Claim 35

A compression bonded semiconductor device in accordance with claim 31 wherein for each circuit assembly: at least two circuit buses are contained in the chamber; and portions of one circuit bus overlie another circuit bus within the chamber.

Claim 36

A compression bonded semiconductor device in accordance with claim 23 wherein: the first and second walls of each of the circuit assemblies have at least one corrugation which encircles and is coaxial with each of the columns to permit a portion of the walls within the columns to flex in any direction without transmitting torque or loads from one of the compression bonded circuit elements to any other of the compression bonded circuit elements which affects pressure applied to the any other of the compression bonded circuit elements to an extent to vary pressure applied to the any other compression bonded circuit elements outside a desired pressure range of operation.

Claim 37

A compression bonded semiconductor device in accordance with claim 33 further comprising for each circuit assembly: at least one circuit bus, each circuit bus having first and second opposed surfaces which are substantially parallel to each other and to the first and second walls of the circuit assembly in which the at least one circuit bus is contained, the at least one circuit bus having at least one corrugation therein.

Claim 38

A compression bonded semiconductor device in accordance with claim 34 further comprising for each circuit assembly: an opening through which at least one circuit connection extends, at least one corrugation being within each circuit bus between the circuit connection and a point of electrical contact with a compression bonded circuit element and at least one corrugation being within each of the at least one circuit buses between any compression bonded circuit elements which are in electrical contact with the at least one bus.

Claim 39

A compression bonded semiconductor device in accordance with claim 35 wherein each circuit assembly further comprises: a control circuit disposed inside the chamber having circuit control elements for controlling the at least two compression bonded circuit elements disposed in the chamber; and the control circuit has at least one contact connected to the at least one circuit bus.

Claim 40

A compression bonded semiconductor device in accordance with claim 36 wherein for each circuit assembly: at least two circuit buses are contained in the chamber; and portions of one circuit bus overlie another circuit bus within the chamber.

Claim 41

A compression bonded semiconductor bus in accordance with claim 33 further comprising for each circuit assembly: at least one circuit bus, each circuit bus having first and second opposed surfaces which are substantially parallel to each other and to the first and second walls of the circuit assembly in which the circuit bus is contained, the at least one circuit bus having at least one corrugation therein.

Claim 42

A compression bonded semiconductor device in accordance with claim 38 further comprising for each circuit assembly: an opening through which at least one circuit connection extends, at least one corrugation being within each circuit bus between the circuit connection and a point of electrical contact with a compression bonded circuit element and at least one corrugation being within each of the at least one circuit buses between any compression bonded circuit elements which are in electrical contact with the at least one bus.

Claim 43

A compression bonded semiconductor device in accordance with claim 39 wherein in each circuit assembly: a control circuit is disposed inside the chamber having circuit control elements for controlling the at least two compression bonded circuit elements disposed in the chamber; and the control circuit has at least one contact with each contact being connected to a different circuit bus.

Claim 44

A compression bonded semiconductor device in accordance with claim 40 wherein for each circuit assembly: at least two circuit buses are contained in the chamber; and portions of one circuit bus overlie another circuit bus within the chamber.

Claim 45

A compression bonded semiconductor device in accordance with claim 23 wherein: each column of the at least one hermetically sealed compression bonded circuit assemblies contains a compression bonded circuit element.

Claim 46

A compression bonded semiconductor device having at least one hermetically sealed compression bonded circuit assembly disposed in a stack with means applying a force to the stack through a lid of one of the at least one circuit assemblies and through a pan of one of the at least one circuit assemblies to compression bond circuit elements within a hermetically sealed chamber of each of the at least one circuit assemblies with each circuit assembly comprising: a metallic pan having a plurality of circular corrugations which are respectively located at positions where columns are located when the circuit assemblies are stacked together; a compression bonded circuit element disposed in a plurality of columns inside the hermetically sealed compression bonded circuit assembly with a side of at least one of the compression bonded circuit elements being electrically connected to the metallic pan; a plurality of circuit connections extending into the hermetically sealed circuit assembly; a plurality of circuit buses with a side of each compression bonded circuit element being electrically connected to one of the circuit buses which is connected to one of the circuit connections; a lid which is joined to the pan to form a hermetically sealed chamber containing the compression bonded circuit elements, circuit buses and an insulator disposed between the lid and the circuit buses, the lid having a plurality of circular corrugations respectively corresponding in position to the circular corrugations of the pan and being contained in the columns of the compression bonded circuit elements; a plurality of inelastically deformed shims equal in number to a number of columns in each of the circuit assemblies, each shim being respectively located outside the hermetically sealed chamber in a different column axially aligned with a different corrugation of the lid, with a thickness of each column of each circuit assembly measured between the deformed shim within the column and a surface of the assembly prior to compression bonding is substantially identical.

Claim 47

A compression bonded semiconductor device having at least one hermetically sealed compression bonded circuit assembly disposed in a stack with means applying a force to the stack through a lid of one of the at least one circuit assemblies and through a pan of one of the at least one circuit assemblies to compression bond circuit elements within a hermetically sealed chamber of each of the at least one circuit assemblies with each circuit assembly comprising: a metallic pan having a plurality of circular corrugations which are respectively located at positions where columns are located when the circuit assemblies are stacked together; a compression bonded circuit element disposed in a plurality of columns inside the hermetically sealed compression bonded circuit assembly with a side of at least one of the compression bonded circuit elements being electrically connected to the metallic pan; a plurality of circuit connections extending into the hermetically sealed circuit assembly; a plurality of circuit buses with a side of each compression bonded circuit element being electrically connected to one of the circuit buses which is connected to one of the circuit connections; a lid which is joined to the pan to form a hermetically sealed chamber containing the compression bonded circuit elements, circuit buses and an insulator disposed between the lid and the circuit buses, the lid having a plurality of circular corrugations respectively corresponding in position to the circular corrugations of the pan and being contained in the columns of the compression bonded circuit elements; a plurality of inelastically deformed shims equal in number to a number of columns in each of the circuit assemblies, each shim being respectively located outside the hermetically sealed chamber in a different column axially aligned with a different corrugation of the lid, with a thickness of each column of each circuit assembly measured between the deformed shim within the column and a surface of the assembly prior to compression bonding is substantially identical.

Claim 48

A compression bonded semiconductor device in accordance with claim 43 wherein each circuit assembly further comprises: a heat sink having a first surface in thermal contact with an outside surface of the pan and an opposed second surface facing an outside surface of the lid of an adjacent circuit assembly except for a bottom circuit assembly in the stack.

Claim 49

A compression bonded semiconductor device in accordance with claim 44 wherein each circuit assembly further comprises: a separate load washer located in each of the columns having a first surface in surface contact with a surface of a deformed shim within the column; and an insulator in surface contact with a second opposed surface of each of the washers.

Claim 50

A compression bonded semiconductor device in accordance with claim 45 wherein each circuit assembly includes: at least two circuit buses in the chamber; and portions of one circuit bus overlie another circuit bus within the chamber.

Claim 51

A compression bonded semiconductor device in accordance with claim 43 wherein: each column of the at least one hermetically sealed compression bonded circuit assemblies contains a compression bonded circuit element.

Claim 52

A compression bonded semiconductor device comprising: at least one hermetically sealed compression bonded circuit assembly disposed in a stack; each hermetically sealed compression bonded circuit assembly having a hermetically sealed chamber, containing at least two compression bonded circuit elements, with the assembly having first and second opposed walls; the at least two compression bonded circuit elements of each circuit assembly configuration being disposed in a different column in the stack; each circuit assembly within the stack being suspended by inelastically deformed springs individually disposed within each of the columns disposed outside the hermetically sealed chamber facing one of the walls with a thickness of the columns measured between the deformed springs and one of the walls prior to compression bonding being substantially identical; and means applying a force to the columns through the second wall of one of the at least one circuit assemblies of the stack and through the first wall of one of the at least one circuit assemblies of the stack to compression bond the circuit elements located in the columns.

Claim 53

A compression bonded semiconductor device comprising: at least one hermetically sealed compression bonded circuit assembly disposed in a stack; each hermetically sealed compression bonded circuit assembly having a hermetically sealed chamber, containing at least two compression bonded circuit elements, with the assembly having first and second opposed walls; the at least two compression bonded circuit elements of each circuit assembly configuration being disposed in a different column in the stack; each circuit assembly within the stack being suspended by inelastically deformed springs individually disposed within each of the columns disposed outside the hermetically sealed chamber facing one of the walls with a thickness of the columns measured between the deformed springs and one of the walls prior to compression bonding being substantially identical; and means applying a force to the columns through the second wall of one of the at least one circuit assemblies of the stack and through the first wall of one of the at least one circuit assemblies of the stack to compression bond the circuit elements located in the columns.

Claim 54

A compression bonded semiconductor device in accordance with claim 57 wherein: each column of the at least one hermetically sealed compression bonded circuit assemblies contains a compression bonded circuit element.

Claim 55

A compression bonded semiconductor device comprising: at least one hermetically sealed compression bonded circuit assembly disposed in a stack; each hermetically sealed compression bonded circuit assembly having a hermetically sealed chamber, containing at least two compression bonded circuit elements, with the assembly having first and second opposed walls; the at least two compression bonded circuit elements of each circuit assembly being disposed in a different column in the stack; each circuit assembly within the stack being suspended in the stack by inelastically deformed shims individually disposed within each of the columns disposed outside the hermetically sealed chamber facing one of the walls with a thickness of the columns measured between the deformed shims and one of the walls prior to compression bonding being substantially identical; and means applying a force to the columns through the second wall of one of the at least one circuit assemblies of the stack and through the first wall of one of the at least one circuit assemblies of the stack to compression bond the circuit elements located in the columns.

Claim 56

A compression bonded semiconductor device comprising: at least one hermetically sealed compression bonded circuit assembly disposed in a stack; each hermetically sealed compression bonded circuit assembly having a hermetically sealed chamber, containing at least two compression bonded circuit elements, with the assembly having first and second opposed walls; the at least two compression bonded circuit elements of each circuit assembly being disposed in a different column in the stack; each circuit assembly within the stack being suspended in the stack by inelastically deformed shims individually disposed within each of the columns disposed outside the hermetically sealed chamber facing one of the walls with a thickness of the columns measured between the deformed shims and one of the walls prior to compression bonding being substantially identical; and means applying a force to the columns through the second wall of one of the at least one circuit assemblies of the stack and through the first wall of one of the at least one circuit assemblies of the stack to compression bond the circuit elements located in the columns.

Claim 57

A compression bonded semiconductor device in accordance with claim 58 wherein: each column of the at least one hermetically sealed compression bonded circuit assemblies contains a compression bonded circuit element.

Claim 58

A compression bonded semiconductor device comprising: at least one hermetically sealed compression bonded circuit assembly disposed in a stack; each hermetically sealed compression bonded circuit assembly including a hermetically sealed chamber containing at least one compression bonded circuit elements with the chamber having first and second opposed walls, and a heat sink having first and second opposed surfaces, the first wall being parallel to and in thermal contact with the first surface of the heat sink, the at least one compression bonded circuit element of each circuit assembly being disposed in a different column in the stack, a spacer being disposed in at least one column inside at least one of the at least one hermetically sealed compression bonded circuit assemblies with each column having a spacer not performing a circuit function; each circuit assembly within the stack being suspended by inelastically deformed springs individually disposed within each of the columns disposed outside the hermetically sealed chamber facing the second wall with a thickness of the columns measured between the deformed springs and one of the walls prior to compression bonding being substantially identical; and means applying a force to the columns through the second wall of one of the at least one circuit assemblies of the stack and through the first wall of one of the at least one circuit assemblies of the stack to compression bond the circuit elements located in the columns.

Claim 59

A compression bonded semiconductor device comprising: at least one hermetically sealed compression bonded circuit assembly disposed in a stack; each hermetically sealed compression bonded circuit assembly including a hermetically sealed chamber containing at least one compression bonded circuit elements with the chamber having first and second opposed walls, and a heat sink having first and second opposed surfaces, the first wall being parallel to and in thermal contact with the first surface of the heat sink, the at least one compression bonded circuit element of each circuit assembly being disposed in a different column in the stack, a spacer being disposed in at least one column inside at least one of the at least one hermetically sealed compression bonded circuit assemblies with each column having a spacer not performing a circuit function; each circuit assembly within the stack being suspended by inelastically deformed springs individually disposed within each of the columns disposed outside the hermetically sealed chamber facing the second wall with a thickness of the columns measured between the deformed springs and one of the walls prior to compression bonding being substantially identical; and means applying a force to the columns through the second wall of one of the at least one circuit assemblies of the stack and through the first wall of one of the at least one circuit assemblies of the stack to compression bond the circuit elements located in the columns.