US5013682A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for selective epitaxy using a WSI mask
Assignee: Texas Instruments Inc
•
Filing: 1989-06-30
•
Granted: 1991-05-07
•
Expires: 2009-06-30
Abstract
Abstract Selective growth of GaAs and related semiconductors (34) by use of tungsten silicide and related materials for growth masks (36) plus devices incorporating the selective growth plus use of the growth masks as electrical contacts are disclosed. The deposition of semiconductor (38) on such masks (36) is inhibited and single crystal vertical structures (34) grow on unmasked regions of the lattice-matched substrate (32). Variation of the mask (36) composition can vary the inhibited deposition on the mask (36) from small isolated islands of polycrystalline semiconductor (38) to a uniform layer of polycrystalline semiconductor abutting the single crystal structures. Preferred embodiments include bipolar transistors with the selectivity grown structure forming the base and emitter or collector and the mask being the base contact and also include lasers with the vertical structures including the resonant cavities with the mirros being the sidewalls of the vertical structures.
Inventors
- 👤 Donald L. Plumton
- 👤 Liem T. Tran
- 👤 Hung-Dah Shih
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 18:21
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10D10/021; H10D10/80; H10D10/821; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10D64/00; H10D64/01; H10D64/011; H10D84/00; H10D84/01; H10D84/02; H10D84/05; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/272; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10D62/85; H10D62/852; H10D62/854; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/095; Y10S148/105; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
55 words
A method of selective epitaxial growth of semiconductor material on a semiconductor body, comprising the steps of: (a) providing a tungsten silicide growth mask on a semiconductor body, said growth mask being W x Si y Zn 1-x-y with 0.995≧x+y≧0.5 and 0.1≦x/y≦20; and (b) growing epitaxial semiconductor material on the unmasked portions of said body.
Claim 2
Independent Claim
55 words
A method of selective epitaxial growth of semiconductor material on a semiconductor body, comprising the steps of: (a) providing a tungsten silicide growth mask on a semiconductor body, said growth mask being W x Si y Zn 1-x-y with 0.995≧x+y≧0.5 and 0.1≦x/y≦20; and (b) growing epitaxial semiconductor material on the unmasked portions of said body.
Claim 3
Dependent Claim
28 words
The method of claim 1, wherein: (a) said semiconductor material is Al x Ga 1-x As; and (b) said method using atomic surface migration is molecular beam epitaxy.
Claim 4
Dependent Claim
21 words
The method of claim 1, wherein: (a) said growth mask is substantially W 5 Si 3 doped with about 10% Zn.
Claim 5
Dependent Claim
28 words
The method of claim 1, wherein: (a) said semiconductor material is Al x Ga 1-x As: and (b) said tungsten silicide growth mask has a tungsten rich surface.
Claim 6
Dependent Claim
22 words
The method of claim 1, wherein: (a) nonepitaxial deposition of said semiconductor material on said mask occurs simultaneously with said epitaxial growth.
Claim 7
Dependent Claim
16 words
The method of claim 1 wherein said tungsten silicide growth mask has a tungsten rich surface.
Claim 8
Dependent Claim
16 words
The method of claim 1 wherein the ratio of tungsten atoms to silicon atoms if 5:3.
Claim 9
Dependent Claim
23 words
The method of claim 1 wherein said growth masked is formed by the steps of forming alternate layers of tungsten, silicon and zinc.
Claim 10
Dependent Claim
17 words
The method of claim 8 wherein plural series of said alternate layers are deposited over each other.
Claim 11
Dependent Claim
13 words
The method of claim 8 further including depositing a final layer of tungsten.
Claim 12
Dependent Claim
13 words
The method of claim 9 further including depositing a final layer of tungsten.
Claim 13
Independent Claim
61 words
A method of selective epitaxial growth of semiconductor material on a semiconductor body, comprising the steps of: (a) providing a tungsten silicide growth mask on a semiconductor body, said growth mask being W 5 Si 3 doped with from about 10 to about 1 to about 30% zinc; and (b) growing epitaxial semiconductor material on the unmasked portions of said body.
Claim 14
Independent Claim
61 words
A method of selective epitaxial growth of semiconductor material on a semiconductor body, comprising the steps of: (a) providing a tungsten silicide growth mask on a semiconductor body, said growth mask being W 5 Si 3 doped with from about 10 to about 1 to about 30% zinc; and (b) growing epitaxial semiconductor material on the unmasked portions of said body.
Claim 15
Dependent Claim
11 words
The method of claim 12 wherein said zinc is about 10%.
Claim 16
Dependent Claim
16 words
The method of claim 12 wherein said tungsten silicide growth mask has a tungsten rich surface.
Claim 17
Dependent Claim
16 words
The method of claim 12 wherein the ratio of tungsten atoms to silicon atoms if 5:3.
Claim 18
Dependent Claim
23 words
The method of claim 12 wherein said growth masked is formed by the steps of forming alternate layers of tungsten, silicon and zinc.
Claim 19
Dependent Claim
17 words
The method of claim 16 wherein plural series of said alternate layers are deposited over each other.
Claim 20
Dependent Claim
13 words
The method of claim 16 further including depositing a final layer of tungsten.
Claim 21
Dependent Claim
13 words
The method of claim 17 further including depositing a final layer of tungsten.
Claim 22
Independent Claim
55 words
A method of selective epitaxial growth of a semiconductor device, comprising the steps of: (a) providing a tungsten silicide growth mask doped with an impurity on a semiconductor body; (b) growing epitaxial semiconductor material on the unmasked portion of said body; and (c) causing said impurity from said mask to diffuse into said semiconductor body.
Claim 23
Independent Claim
55 words
A method of selective epitaxial growth of a semiconductor device, comprising the steps of: (a) providing a tungsten silicide growth mask doped with an impurity on a semiconductor body; (b) growing epitaxial semiconductor material on the unmasked portion of said body; and (c) causing said impurity from said mask to diffuse into said semiconductor body.
Claim 24
Dependent Claim
10 words
The method of claim 20 wherein said impurity is zinc.
Claim 25
Dependent Claim
14 words
The method of claim 20 wherein said body is a group III-V semiconductor compound.
Claim 26
Dependent Claim
14 words
The method of claim 21 wherein said body is a group III-V semiconductor compound.
References Cited (Backward Citations)
US4426767A
Cited
USH134H
Cited
US4774205A
Cited
US4788159A
Cited
US4888085A
Cited
US4891093A
Cited
JPS6489959A
Cited
US4826784A
Cited
US4902643A
Cited
US4910164A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-05-06 | 1994-11-05 | 1995-05-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-05-06 | 1998-11-05 | 1999-05-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-05-06 | 2002-11-05 | 2003-05-07 | $7700.00 | Window Closed / Lapsed |