US4902643A
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Method of selective epitaxial growth for compound semiconductors
Assignee: NEC Corp
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Filing: 1989-02-09
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Granted: 1990-02-20
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Expires: 2009-02-09
Abstract
Abstract A method of selective epitaxial growth for compound semiconductor includes the steps of forming a layer of group IV element semiconductor, such as Ge, with a predetermined pattern on a compound semiconductor substrate and forming a compound semiconductor layer selectively on the compound semiconductor substrate by alternately supplying a gas of compound containing a group III or II element, such as trimethylgallium, triethylgallium and triisobutylaluminum, and a gas of compound containing a group V or VI element, such as AsH 3 , onto both surface of the layer of group IV element semiconductor and the compound semiconductor substrate. Another semiconductor layer of group IV element semiconductor or compound semiconductor may be formed on the layer of group IV element semiconductor by organometallic vapor phase epitaxy or MBE.
Inventors
- 👤 Hidenori Shimawaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:13
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/80; H10D30/87; H10D30/877; H10D10/00; H10D10/01; H10D10/021; H10D10/80; H10D10/821; H10D30/01; H10D30/051; H10D64/00; H10D64/20; H10D64/27; H10D64/281; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/24; H10P14/27; H10P14/271; H10P14/272; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3214; H10P14/3221; H10D62/00; H10D62/80; H10D62/85; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/106; Y10S438/00; Y10S438/933
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
91 words
A method of selective epitaxial growth comprising the steps of: forming a layer of group IV element semiconductor with a predetermined pattern on a compound semiconductor substrate; and forming a compound semiconductor layer selectively on said compound semiconductor substrate by alternately supplying a first gas of a first compound containing a group III or II element and a second gas of a second gas of a second compound containing a group V or VI element onto both surfaces of said layer of group IV element semiconductor and said compound semiconductor substrate.
Claim 2
Independent Claim
91 words
A method of selective epitaxial growth comprising the steps of: forming a layer of group IV element semiconductor with a predetermined pattern on a compound semiconductor substrate; and forming a compound semiconductor layer selectively on said compound semiconductor substrate by alternately supplying a first gas of a first compound containing a group III or II element and a second gas of a second gas of a second compound containing a group V or VI element onto both surfaces of said layer of group IV element semiconductor and said compound semiconductor substrate.
Claim 3
Dependent Claim
37 words
A method of selective epitaxial growth as claimed in claim 1, further comprising a step of forming another semiconductor layer on said layer of group IV element semiconductor after said step of forming said compound semiconductor layer.
Claim 4
Dependent Claim
22 words
A method of selective epitaxial growth as claimed in claim 1, wherein said compound semiconductor layer is a III-V compound semiconductor layer.
Claim 5
Dependent Claim
22 words
A method of selective epitaxial growth as claimed in claim 1, wherein said compound semiconductor layer is a II-VI compound semiconductor layer.
Claim 6
Dependent Claim
30 words
A method of selective epitaxial growth as claimed in claim 1, wherein compound semiconductor of said compound semiconductor layer is the same material as that of said compound semiconductor substrate.
Claim 7
Dependent Claim
28 words
A method of selective epitaxial growth as claimed in claim 1, wherein compound semiconductor of said compound semiconductor layer is different from that of said compound semiconductor substrate.
Claim 8
Dependent Claim
33 words
A method of selective epitaxial growth as claimed in claim 3, wherein said III-V compound semiconductor is selected from a group of GaAs, AlGaAs and AlAs, said group IV element semiconductor being Ge.
Claim 9
Dependent Claim
40 words
A method of selective epitaxial growth as claimed in claim 3, wherein said III-V compound semiconductor is GaAs, said group IV element semiconductor being Ge, said first gas being trimethylgallium or triethylgallium and said second gas being AsH 3 .
Claim 10
Dependent Claim
40 words
A method of selective epitaxial growth as claimed in claim 3, wherein said III-V compound semiconductor is AlGaAs, said group IV element semiconductor being Ge, said first gas being triethylgallium and triisobutylaluminum and said second gas being AsH 3 .
Claim 11
Dependent Claim
21 words
A method of selective epitaxial growth as claimed in claim 2, wherein said another semiconductor layer is a compound semiconductor layer.
Claim 12
Dependent Claim
24 words
A method of selective epitaxial growth as claimed in claim 2, wherein said another semiconductor layer is a layer of group IV element semiconductor.
Claim 13
Dependent Claim
33 words
A method of selective epitaxial growth as claimed in claim 2, wherein said another semiconductor layer is formed by a method of organometallic vapor phase epitaxy or a method of molecular beam epitaxy.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-19 | 1993-08-21 | 1994-02-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-19 | 1997-08-21 | 1998-02-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-19 | 2001-08-21 | 2002-02-20 | $7700.00 | Window Closed / Lapsed |