USH134H
Expired / Lapsed
US
⏱️ 0.0 years remaining
Buried junction enhanced Schottky barrier device
Assignee: United States Department of the Air Force
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Filing: 1984-08-22
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Granted: 1986-09-02
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Expires: 2004-08-22
Abstract
Abstract A Schottky barrier device having a completely submersed Schottky barrier junction to enhance the collection efficiency of photogenerated carriers. A method is also disclosed for manufacturing the device.
Inventors
- 👤 Lyn H. Skolnik
- 👤 Sven A. Roosild
- 👤 Freeman D. Shepherd, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 23:25
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227; H10D; H10D8/00; H10D8/60; H10F71/00; H10F71/131; Y; Y02; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
147 words
A method for manufacturing a buried junction enhanced Schottky barrier device comprising the steps of: (a) oxidizing a p-type silicon substrate for contacts, guard rings and an n channel; (b) diffusing n+ material in defined areas in the front surface of said substrate; (c) removing oxides from said substrate; (d) defining and depositing a polysilicon charge transfer gate and gate electrode; (e) defining an area for the transition metal of said device; (f) depositing said transition metal and sintering said metal to form a metal-silicon diode; (g) removing unreacted portions of said metal; (h) etching a ring around said diode to expose said p-type substrate and n+ diffusions; (i) depositing p-type silicon over exposed areas of said substrate and said metal silicon diode; and (j) annealing said device whereby a single layer epitaxial film regrows over said diode to form a back-to-back p-type silicon/metal/p-type silicon diode structure.
Claim 2
Independent Claim
147 words
A method for manufacturing a buried junction enhanced Schottky barrier device comprising the steps of: (a) oxidizing a p-type silicon substrate for contacts, guard rings and an n channel; (b) diffusing n+ material in defined areas in the front surface of said substrate; (c) removing oxides from said substrate; (d) defining and depositing a polysilicon charge transfer gate and gate electrode; (e) defining an area for the transition metal of said device; (f) depositing said transition metal and sintering said metal to form a metal-silicon diode; (g) removing unreacted portions of said metal; (h) etching a ring around said diode to expose said p-type substrate and n+ diffusions; (i) depositing p-type silicon over exposed areas of said substrate and said metal silicon diode; and (j) annealing said device whereby a single layer epitaxial film regrows over said diode to form a back-to-back p-type silicon/metal/p-type silicon diode structure.
Claim 3
Dependent Claim
12 words
A method according to claim 1 wherein said transition metal is platinum.
Claim 4
Dependent Claim
12 words
A method according to claim 1 wherein said transition metal is iridium.
Claim 5
Dependent Claim
12 words
A method according to claim 1 wherein said transition metal is palladium.
Claim 6
Dependent Claim
12 words
A method according to claim 1 wherein said transition metal is nickel.
Claim 7
Dependent Claim
27 words
A method according to claim 1 and including the additional step of: overcoating the front surface of said device with aluminium to enhance its optical absorption characteristics.
Claim 8
Dependent Claim
27 words
A method according to claim 1 and including the additional step of: overcoating the back surface of said device with aluminum to enhance its optical absorption characteristics.
Claim 9
Dependent Claim
51 words
A buried junction Schottky barrier device comprising: a semiconductor substrate; a metal deposited on said substrate to form a first metal-semiconductor interface; a semiconductor material disposed over the exposed surface of said metal to form a second metal-semiconductor interface; and means for deriving signals from said first and second metal-semiconductor interface.
Claim 10
Dependent Claim
51 words
A buried junction Schottky barrier device comprising: a semiconductor substrate; a metal deposited on said substrate to form a first metal-semiconductor interface; a semiconductor material disposed over the exposed surface of said metal to form a second metal-semiconductor interface; and means for deriving signals from said first and second metal-semiconductor interface.
Claim 11
Dependent Claim
18 words
Apparatus as defined in claim 8 wherein said metal is platinum and said semiconductor substrate is p-type silicon.
Claim 12
Dependent Claim
27 words
Apparatus as defined in claim 8 and further comprising: a layer of aluminum disposed over a surface of said substrate to enhance optical absorption of said apparatus.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-09-01 | 1990-03-03 | 1990-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-09-01 | 1994-03-03 | 1994-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-09-01 | 1998-03-03 | 1998-09-02 | $7700.00 | Window Closed / Lapsed |