US5001083A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of priming semiconductor substrate for subsequent photoresist masking and etching
Assignee: ZOLTAR ACQUISITION Inc A Corp OF NORTH CAROLINA
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Filing: 1988-07-12
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Granted: 1991-03-19
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Expires: 2008-07-12
Abstract
Abstract Disclosed is a method of improving semiconductor device yield by enhancing photoresist adherence to semiconductor substrates during device fabrication. The surface of a layer, such as silicon oxide of silicon nitride, on a semiconductor substrate is coated with a thin layer of oxygen-reactive metal prior to applying photoresist material thereto. The metal is selected from the group consisting of tungsten, titanium, chromium, and combinations thereof; the thickness of the layer of oxygen-reactive metal is of the order of 50-100 Å. The metal coating facilitates the adhesion of the resist material and reduces undercutting of the layer to be etched.
Inventors
- 👤 Pablo E. D'Anna
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 10:45
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/11; H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/95
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
93 words
In photoresist masking of a semiconductor substrate for device fabrication, the method of cleaning a surface of said semiconductor substrate, forming a thin layer of oxygen-reactive metal on said surface, coating said layer of oxygen-reactive metal with a photoresist material, said oxygen-reactive metal layer providing an adhesive layer for said photoresist layer, selectively removing portions of said photoresist material thereby exposing selected areas of said oxygen-reactive metal, etching said selected areas of said oxygen-reactive metal and the underlying surface areas of said semiconductor substrate, removing said photoresist material, and removing said oxygen-reactive metal.
Claim 2
Dependent Claim
93 words
In photoresist masking of a semiconductor substrate for device fabrication, the method of cleaning a surface of said semiconductor substrate, forming a thin layer of oxygen-reactive metal on said surface, coating said layer of oxygen-reactive metal with a photoresist material, said oxygen-reactive metal layer providing an adhesive layer for said photoresist layer, selectively removing portions of said photoresist material thereby exposing selected areas of said oxygen-reactive metal, etching said selected areas of said oxygen-reactive metal and the underlying surface areas of said semiconductor substrate, removing said photoresist material, and removing said oxygen-reactive metal.
Claim 3
Dependent Claim
17 words
A method as defined by claim 1 wherein said surface of said semiconductor substrate comprises silicon oxide.
Claim 4
Dependent Claim
17 words
A method as defined by claim 1 wherein said surface of said semiconductor substrate comprises silicon nitride.
Claim 5
Dependent Claim
23 words
The method as defined by claim 2 wherein said metal is selected from the group consisting of tungsten, titanium, chromium, and combinations thereof.
Claim 6
Dependent Claim
14 words
The method as defined by claim 4 wherein said metal is formed by sputtering.
Claim 7
Dependent Claim
15 words
The method as defined by claim 4 wherein said metal is formed by vacuum deposition.
Claim 8
Dependent Claim
22 words
The method as defined by claim 4 wherein said layer of oxygen-reactive metal has a thickness on the order of 50-100 Å.
Claim 9
Dependent Claim
16 words
The method as defined by claim 4 and further including the step of baking said photoresist.
Claim 10
Dependent Claim
33 words
The method as defined by claim 8 and further including the step of exposing said photoresist after baking by applying a beam of exposing energy thereto and developing an image in said photoresist.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-03-18 | 1994-09-17 | 1995-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-03-18 | 1998-09-17 | 1999-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-03-18 | 2002-09-17 | 2003-03-19 | $7700.00 | Window Closed / Lapsed |