US4497890A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for improving adhesion of resist to gold
Assignee: Motorola Solutions Inc
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Filing: 1983-04-08
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Granted: 1985-02-05
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Expires: 2003-04-08
Abstract
Abstract A process is disclosed for improving the adhesion of a polymeric resist to a gold metallization surface. The process includes the use of a chelating silane as an adhesion promoter between the resist and the gold metallization surface. The improved resist adhesion to the gold metallization surface is attributed to a complexation or chemisorption mechanism. The adhesion promoters of interest contain moieties capable of acting as chelating or chemisorption sites on the molecular silane, thus creating layer-to-layer bonding with greater strength than that observed where just Van der Waals interactions occur to the gold surface atoms.
Inventors
- 👤 John N. Helbert
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 20:14
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/11; H10P14/63; H10P14/6326; H10P14/6342; H10P14/65; H10P14/6502; H10P14/6506; H05; H05K; H05K3/00; H05K3/38; H05K3/389; Y; Y10; Y10S; Y10S430/00; Y10S430/143; Y10S430/167; Y10S430/168; Y10S438/00; Y10S438/942; Y10S438/948
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
42 words
A process for increasing the adhesion of a polymeric resist to a gold metallization surface which comprises the steps of: applying to the gold metallization surface a layer of chelating silane; and applying the polymeric resist to the layer of chelating silane.
Claim 2
Dependent Claim
42 words
A process for increasing the adhesion of a polymeric resist to a gold metallization surface which comprises the steps of: applying to the gold metallization surface a layer of chelating silane; and applying the polymeric resist to the layer of chelating silane.
Claim 3
Dependent Claim
21 words
The process of claim 1 wherein the chelating silane is selected from the group consisting of: 2-(diphenylphosphino)ethyltriethoxysilane, trimethylsilylacetamide, bis[3-triethoxysilyl)propyl]tetrasulphide, and 3-mercaptopropyltriethoxysilane.
Claim 4
Dependent Claim
109 words
A process for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate; applying a layer of gold metallization overlying said substrate; applying to said layer of gold metallization a chelating silane adhesion promoter; applying a layer of polymeric resist to said chelating silane adhesion promoter; exposing said layer of polymeric resist to form regions of exposed resist and regions of unexposed resist; developing said layer of polymeric resist material to remove one of said exposed or unexposed resist regions leaving the other of said exposed or unexposed resist regions as an etch mask; and etching said layer of gold metallization through openings in said etch mask.
Claim 5
Dependent Claim
109 words
A process for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate; applying a layer of gold metallization overlying said substrate; applying to said layer of gold metallization a chelating silane adhesion promoter; applying a layer of polymeric resist to said chelating silane adhesion promoter; exposing said layer of polymeric resist to form regions of exposed resist and regions of unexposed resist; developing said layer of polymeric resist material to remove one of said exposed or unexposed resist regions leaving the other of said exposed or unexposed resist regions as an etch mask; and etching said layer of gold metallization through openings in said etch mask.
Claim 6
Dependent Claim
23 words
The process of claim 3 wherein said chelating silane adhesion promoter is selected from the group consisting of: 2-(diphenylphosphino)ethyltriethoxysilane, trimethylsilylacetamide, bis[3-(triethoxysilyl)propyl]tetrasulphide, and 3-mercaptopropyltriethoxysilane.
Claim 7
Dependent Claim
22 words
The process of claim 3 wherein said step of exposing comprises optically irradiating said layer with actinic radiation through a patterned photomask.
Claim 8
Dependent Claim
19 words
The process of claim 3 wherein said step of exposing comprises selectively irradiating said layer with an electron beam.
Claim 9
Dependent Claim
18 words
The process of claim 3 wherein said step of exposing comprises selectively irradiating said layer with soft x-rays.
Claim 10
Dependent Claim
13 words
The process of claim 3 wherein said polymeric resist has a positive tone.
References Cited (Backward Citations)
US3482977A
Cited
US3549368A
Cited
US3911169A
Cited
US4075367A
Cited
JPS57130432A
Cited
US4371565A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-02-05 | 1988-08-06 | 1989-02-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-02-05 | 1992-08-06 | 1993-02-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-02-05 | 1996-08-06 | 1997-02-05 | $7700.00 | Window Closed / Lapsed |