Patent US4985114A successfully refreshed from Google Patents.
US4985114A
Expired / Lapsed
US
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Dry etching by alternately etching and depositing
Assignee: Hitachi Ltd
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Filing: 1989-10-06
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Granted: 1991-01-15
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Expires: 2009-10-06
Abstract
Abstract A dry etching method including the steps of introducing etching and deposition gases alternately into a reaction chamber at predetermined time intervals, etching the exposed surface of an article to be etched and applying deposition to the surface film thereof alternately by making plasma generated by applying power to the etching and deposition gases introduced into the reaction chamber come in contact with the article to be etched in the reaction chamber in order to etch the surface, is characterized in that the power is applied after the passage of predetermined time from the start of the introduction of the deposition gas and before the etching gas is introduced and cut off when the introduction of the etching gas is suspended.
Inventors
- 👤 Sadayuki Okudaira
- 👤 Hiroshi Kawakami
- 👤 Tokuo Kure
- 👤 Kazunori Tsujimoto
- 👤 Shinichi Tachi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:23
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/71; H10P50/244; H10P50/69; H10P50/691; H10P50/693; H10P50/694; H10P50/73; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; Y; Y10; Y10S; Y10S438/00; Y10S438/913
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
203 words
A dry etching method comprising the steps of: alternately introducing an etching gas and a deposition gas into a reaction chamber at predetermined time intervals; and alternately etching an exposed surface of an article to be etched and causing a film to be deposited on said surface of said article by applying a first power to said introduced etching and deposition gases to alternately generate an etching plasma and deposition plasma, said etching and deposition plasma alternately coming into contact with said article to be etched said reaction chamber in order to alternately etch and cause a film to be deposited on said surface so as to etch said surface, and said first power being applied after passage of a predetermined amount of time from the start passage of a predetermined amount of time from the start of the introduction of said deposition gas and before the introduction of said etching gas and cut off when the introduction of said etching gas is suspended; and applying a second power to said article to be etched when the introduction of said etching gas is started and cutting off said second power at a time prior to suspension of the introduction of said etching gas.
Claim 2
Dependent Claim
203 words
A dry etching method comprising the steps of: alternately introducing an etching gas and a deposition gas into a reaction chamber at predetermined time intervals; and alternately etching an exposed surface of an article to be etched and causing a film to be deposited on said surface of said article by applying a first power to said introduced etching and deposition gases to alternately generate an etching plasma and deposition plasma, said etching and deposition plasma alternately coming into contact with said article to be etched said reaction chamber in order to alternately etch and cause a film to be deposited on said surface so as to etch said surface, and said first power being applied after passage of a predetermined amount of time from the start passage of a predetermined amount of time from the start of the introduction of said deposition gas and before the introduction of said etching gas and cut off when the introduction of said etching gas is suspended; and applying a second power to said article to be etched when the introduction of said etching gas is started and cutting off said second power at a time prior to suspension of the introduction of said etching gas.
Claim 3
Dependent Claim
16 words
A dry etching method as claimed in claim 1, wherein said first power is μ-wave power.
Claim 4
Dependent Claim
17 words
A dry etching method as claimed in claim 1, wherein said etching gas is SF 6 .
Claim 5
Dependent Claim
54 words
A dry etching method as claimed in claim 1, wherein said deposition gas is selected from the group consisting of CCl 4 , C 2 Cl 3 F 3 , C 2 ClF 5 , SiH 3 Cl, CHCl 3 , CH 3 Cl, CBrF 3 and C 2 Br 2 F 4 .
Claim 6
Dependent Claim
26 words
A dry etching method as claimed in claim 1, wherein said first power is applied to a parallel plate type electrode provided in said reaction chamber.
Claim 7
Dependent Claim
61 words
A dry etching method as claimed in claim 1, wherein the predetermined amount of time from the start of the introduction of said deposition gas to the application of said first power is selected so as to make a ratio of (VE+VD) to residual etching gas pressure VE in said reaction chamber satisfy the following equation: VE/(VD+VE)>5/100, where VD=deposition gas pressure.
Claim 8
Dependent Claim
16 words
A dry etching method as claimed in claim 1, wherein said second power is RF power.
Claim 9
Dependent Claim
152 words
A dry etching method comprising the steps of: alternately introducing an etching gas and a deposition gas into a reaction chamber at predetermined time intervals; and alternately etching an exposed surface of an article to be etched and causing a film to be deposited on said surface of said article by applying power to said introduced etching and deposition gases to alternately generate an etching plasma and deposition plasma said etching and deposition plasma alternately coming into contact with said article in said reaction chamber in order to alternately etch and cause a film to be deposited on said surface of said article so as to etch said surface, and said power being applied after passage of a predetermined amount of time from the start of the introduction of said deposition gas and before the introduction of said etching gas and cut off when the introduction of said etching gas is suspended.
Claim 10
Dependent Claim
152 words
A dry etching method comprising the steps of: alternately introducing an etching gas and a deposition gas into a reaction chamber at predetermined time intervals; and alternately etching an exposed surface of an article to be etched and causing a film to be deposited on said surface of said article by applying power to said introduced etching and deposition gases to alternately generate an etching plasma and deposition plasma said etching and deposition plasma alternately coming into contact with said article in said reaction chamber in order to alternately etch and cause a film to be deposited on said surface of said article so as to etch said surface, and said power being applied after passage of a predetermined amount of time from the start of the introduction of said deposition gas and before the introduction of said etching gas and cut off when the introduction of said etching gas is suspended.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-01-14 | 1994-07-16 | 1995-01-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-01-14 | 1998-07-16 | 1999-01-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-01-14 | 2002-07-16 | 2003-01-15 | $7700.00 | Window Closed / Lapsed |