US4982249A
Expired / Lapsed
US
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Double diffused MOSFET cell
Assignee: SK Hynix Inc
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Filing: 1989-06-09
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Granted: 1991-01-01
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Expires: 2009-06-09
Abstract
Abstract A double diffused MOSFET cell having a particular cell configuration which resembles a circle with a scalloped perimeter is disclosed.
Inventors
- 👤 Jong O. Kim
- 👤 Jin H. Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:04
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D62/00; H10D62/10; H10D62/124; H10D62/126; H10D62/127
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
140 words
A D MOSFET cell comprising a N-type epitaxial layer on the N-type silicon substrate, a P-type diffusion region of hexagonal cell formed in the N-type epitaxial layer to the desired depth, ring shaped N+ region with constant width formed along the perimeter in said P-type diffusion region, a channel formed in P-type diffusion region between N+ region and N-type epitaxial layer by gate voltage; characterized in that, said P-type diffusion region has a structure that alternatively spaced three sides are formed by the circumscribing circumference and another three sides are formed by symmetrizing the circumscribing circumference to each sides of the hexagon; and the total channel width of the cell is increased so that said N+ region formed in said P-type diffusion region having ring shape spaced inward to the desired distance along the inside of said P-type diffusion region.
Claim 2
Dependent Claim
140 words
A D MOSFET cell comprising a N-type epitaxial layer on the N-type silicon substrate, a P-type diffusion region of hexagonal cell formed in the N-type epitaxial layer to the desired depth, ring shaped N+ region with constant width formed along the perimeter in said P-type diffusion region, a channel formed in P-type diffusion region between N+ region and N-type epitaxial layer by gate voltage; characterized in that, said P-type diffusion region has a structure that alternatively spaced three sides are formed by the circumscribing circumference and another three sides are formed by symmetrizing the circumscribing circumference to each sides of the hexagon; and the total channel width of the cell is increased so that said N+ region formed in said P-type diffusion region having ring shape spaced inward to the desired distance along the inside of said P-type diffusion region.
Claim 3
Dependent Claim
55 words
The device of claim 1 which is further characterized in that a plurality of cells are disposed for large scale integration of said cell structure; the concave and convex parts of the circumscribing and inscribing sides of the said the plurality of cells are disposed on every direction with continuous pattern while retaining constant distance.
Claim 4
Dependent Claim
15 words
A semiconductor device formed by a plurality of cells as set forth at claim 1.
Claim 5
Dependent Claim
125 words
A D MOSFET cell comprising: a N-type silicon substrate, a N-epitaxial layer formed on said N-type silicon substrate, a P-type diffusion region formed in said N- epitaxial layer to the desired depth having a circular structure with a plurality concave arcs and a plurality of convex arcs alternately positioned about said circular structure to define a circle having a scalloped perimeter; a metal layer formed on said N- epitaxial layer and extending to said scalloped perimeter of said circle; a N+ region having a constant width formed along said scalloped perimeter of said P- type diffusion region; and a gate oxide layer extending from said scalloped perimeter of said metal layer and formed over said P type diffusion region and said N- type epitaxial layer.
Claim 6
Dependent Claim
125 words
A D MOSFET cell comprising: a N-type silicon substrate, a N-epitaxial layer formed on said N-type silicon substrate, a P-type diffusion region formed in said N- epitaxial layer to the desired depth having a circular structure with a plurality concave arcs and a plurality of convex arcs alternately positioned about said circular structure to define a circle having a scalloped perimeter; a metal layer formed on said N- epitaxial layer and extending to said scalloped perimeter of said circle; a N+ region having a constant width formed along said scalloped perimeter of said P- type diffusion region; and a gate oxide layer extending from said scalloped perimeter of said metal layer and formed over said P type diffusion region and said N- type epitaxial layer.
Claim 7
Dependent Claim
46 words
The D MOSFET cell of claim 4 wherein the number of concave arcs is three and the number of convex arcs is three and wherein each arc has an equal length relative to another arc thereby forming a balanced circle shape having a symmetrical scalloped perimeter.
Claim 8
Dependent Claim
15 words
The D MOSFET cell including a plurality of intergrated D MOSFET cells of claim 1.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-31 | 1994-07-02 | 1995-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-31 | 1998-07-02 | 1999-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-31 | 2002-07-02 | 2003-01-01 | $7700.00 | Window Closed / Lapsed |