US4593302B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
Assignee: Infineon Technologies Americas Corp
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Filing: 1980-08-18
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Granted: 1998-02-03
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Expires: 2000-08-18
Abstract
No abstract record available.
Inventors
- 👤 Alexander Lidow
- 👤 Thomas Herman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 19:53
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/665; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D62/106; H10D62/124; H10D62/126; H10D62/127; H10D62/13; H10D62/149; H10D62/151; H10D62/156; H10D62/157; H10D62/17; H10D62/393
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-02-02 | 2001-08-04 | 2002-02-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-02-02 | 2005-08-04 | 2006-02-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-02-02 | 2009-08-04 | 2010-02-03 | $7700.00 | Window Closed / Lapsed |